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Thomas Koprucki

Leibniz Association

19H指数
147论文数
945被引数
收录论文 27
发表时间
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Impact of random alloy fluctuations on the carrier distribution in multicolor (In,Ga)N/GaN quantum well systems
errPHYSICAL REVIEW APPLIED
IF4.4
err2024-02-27
err2
PREAI
errO'Donovan, Michael; Farrell, Patricio; Moatti, Julien; Streckenbach, Timo; Koprucki, Thomas; Schulz, Stefan
err分享
err收藏
Importance of satisfying thermodynamic consistency in optoelectronic device simulations for high carrier densities
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2023-09-09
err1
errOAAI
errFarrell, Patricio; Moatti, Julien; O'Donovan, Michael; Schulz, Stefan; Koprucki, Thomas
err分享
err收藏
Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-06-13
err6
errOAAI
errFinn, R.; O'Donovan, M.; Farrell, P.; Moatti, J.; Streckenbach, T.; Koprucki, T.; Schulz, S.
err分享
err收藏
Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2022-06-06
err7
errOAAI
errO'Donovan, Michael; Farrell, Patricio; Streckenbach, Timo; Koprucki, Thomas; Schulz, Stefan
err分享
err收藏
Numerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes (vol 52, 257, 2020)
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2021-07-02
err0
errOAAI
errMaltsi, Anieza; Niermann, Tore; Streckenbach, Timo; Tabelow, Karsten; Koprucki, Thomas
err分享
err收藏
Multiband k • p model and fitting scheme for ab initio based electronic structure parameters for wurtzite GaAs
errPHYSICAL REVIEW B
IF3.7
err2020-06-22
err10
errOAAI
errMarquardt, Oliver; Caro, Miguel A.; Koprucki, Thomas; Mathe, Peter; Willatzen, Morten
err分享
err收藏
Numerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2020-05-05
err7
errOAAI
errMaltsi, Anieza; Niermann, Tore; Streckenbach, Timo; Tabelow, Karsten; Koprucki, Thomas
err分享
err收藏
Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2019-02-22
err12
PREAI
errRadziunas, Mindaugas; Fuhrmann, Juergen; Zeghuzi, Anissa; Wuensche, Hans-Juergen; Koprucki, Thomas; Bree, Carsten; Wenzel, Hans; Bandelow, Uwe
err分享
err收藏
Highly accurate quadrature-based Scharfetter-Gummel schemes for charge transport in degenerate semiconductors
errCOMPUTER PHYSICS COMMUNICATIONS
IF3.4
err2019-02-01
err12
PREAI
errPatriarca, Matteo; Farrell, Patricio; Fuhrmann, Juergen; Koprucki, Thomas
err分享
err收藏
Balance of Horizontal and Vertical Charge Transport in Organic Field-Effect Transistors
errPHYSICAL REVIEW APPLIED
IF4.4
err2018-09-28
err26
PREAI
errSawatzki, Franz Michael; Doan, Duy Hai; Kleemann, Hans; Liero, Matthias; Glitzky, Annegret; Koprucki, Thomas; Leo, Karl
err分享
err收藏
Comparison of thermodynamically consistent charge carrier flux discretizations for Fermi-Dirac and Gauss-Fermi statistics
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2018-02-07
err8
PREAI
errFarrell, Patricio; Patriarca, Matteo; Fuhrmann, Juergen; Koprucki, Thomas
err分享
err收藏
Model pathway diagrams for the representation of mathematical models
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2018-01-23
err5
PREAI
errKoprucki, Thomas; Kohlhase, Michael; Tabelow, Karsten; Mueller, Dennis; Rabe, Florian
err分享
err收藏
Reproducible and comprehensible research results through persistently linked and visualized numerical simulation data
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2018-01-17
err1
PREAI
errDrees, Bastian; Kraft, Angelina; Koprucki, Thomas
err分享
err收藏
Hybrid quantum-classical modeling of quantum dot devices
errPHYSICAL REVIEW B
IF3.7
err2017-11-03
err17
errOAAI
errKantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas
err分享
err收藏
Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
errJOURNAL OF COMPUTATIONAL PHYSICS
IF3.8
err2017-10-01
err28
PREAI
errFarrell, Patricio; Koprucki, Thomas; Fuhrmann, Juergen
err分享
err收藏
Efficient coupling of the inhomogeneous current spreading model to the dynamic electro-optical solver for broad-area edge-emitting semiconductor devices
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2017-09-25
err11
PREAI
errRadziunas, Mindaugas; Zeghuzi, Anissa; Fuhrmann, Juergen; Koprucki, Thomas; Wuensche, Hans-Juergen; Wenzel, Hans; Bandelow, Uwe
err分享
err收藏
3D electrothermal simulations of organic LEDs showing negative differential resistance
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2017-09-22
err11
PREAI
errLiero, Matthias; Fuhrmann, Juergen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, Sebastian
err分享
err收藏
Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2016-11-23
err29
PREAI
errKantner, Markus; Koprucki, Thomas
err分享
err收藏
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium基于应变锗的边缘发射激光器器件概念的鲁棒性分析
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2016-02-01
err5
PREAI
errPeschka, Dirk; Thomas, Marita; Glitzky, Annegret; Rnberg, Reiner Nu; Virgilio, Michele; Guha, Subhajit; Schroeder, Thomas; Capellini, Giovanni; Koprucki, Thomas
err分享
err收藏
On thermodynamic consistency of a Scharfetter-Gummel scheme based on a modified thermal voltage for drift-diffusion equations with diffusion enhancement
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2014-10-30
err22
PREAI
errKoprucki, Thomas; Rotundo, Nella; Farrell, Patricio; Doan, Duy Hai; Fuhrmann, Jurgen
err分享
err收藏

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