未登录

J

Jaakko Mäkelä

University of Turku

H指数:11

被引数:420

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Dimer-vacancy defects on Si(100): The role of nickel impurity

APPLIED SURFACE SCIENCE

IF6.9

2020-03-014

PREAI

Unusual oxidation-induced core-level shifts at the HfO2/InP interface

SCIENTIFIC REPORTS

IF3.9

2019-02-0615

OAAI

Observation of Crystalline Oxidized Silicon Phase

ADVANCED MATERIALS INTERFACES

IF4.4

2019-02-053

PREAI

Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing

ALD-Al2O3/InAs(100) 界面的氧化引起的变化以及对器件加工的控制

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-12-037

OAAI

Imaging empty states on the Ge(100) surface at 12 K

PHYSICAL REVIEW B

IF3.7

2018-10-292

PREAI

Crystalline and oxide phases revealed and formed on InSb(111)B

在InSb(111)B上发现并形成了结晶相和氧化物相

SCIENTIFIC REPORTS

IF3.9

2018-09-2612

OAAI

Wet etching of dilute nitride GaInNAs, GaInNAsSb, and GaNAsSb alloys lattice-matched to GaAs

CORROSION SCIENCE

IF8.5

2018-05-012

PREAI

Solar UV index and UV dose determination with photochromic hackmanites: from the assessment of the fundamental properties to the device

MATERIALS HORIZONS

IF10.7

2018-01-0135

PREAI

Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces

APPLIED SURFACE SCIENCE

IF6.9

2018-01-017

PREAI

Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures

ADVANCED MATERIALS INTERFACES

IF4.4

2017-09-194

PREAI

Lanthanide and Heavy Metal Free Long White Persistent Luminescence from Ti Doped Li-Hackmanite: A Versatile, Low-Cost Material

ADVANCED FUNCTIONAL MATERIALS

IF19

2017-03-1762

PREAI

Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations

APPLIED SURFACE SCIENCE

IF6.9

2017-02-017

PREAI

Comparison of Chemical, Electronic, and Optical Properties of Mg- Doped AIGaN

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2016-12-134

PREAI

Origin of Fermi-level pinning and its control on the n-type Ge(100) surface

PHYSICAL REVIEW B

IF3.7

2016-07-1415

PREAI

Mechanisms of Tenebrescence and Persistent Luminescence in Synthetic Hackmanite Na8Al6Si6O24(Cl,S)2

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-05-0249

PREAI

Thermally assisted oxidation of GaSb(100) and the effect of initial oxide phases

APPLIED SURFACE SCIENCE

IF6.9

2016-04-014

PREAI

Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions

ADVANCED MATERIALS INTERFACES

IF4.4

2016-03-013

PREAI

Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

PHYSICAL REVIEW B

IF3.7

2015-10-206

PREAI

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2015-08-127

OAAI

Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III-V semiconductors

APPLIED SURFACE SCIENCE

IF6.9

2015-02-016

PREAI