Seong-Ook Jung

Yonsei University

H指数:28

被引数:3,008

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DPe-CIM: A 4T-1C Dual-Port eDRAM-Based Compute-in-Memory for Simultaneous Computing and Refresh With Adaptive Refresh and Data Conversion Reduction Scheme

DPe-CIM：一种基于4T-1C双端口eDRAM的存内计算器，用于自适应刷新和数据转换减少方案下的同时计算和刷新

IEEE Journal of Solid-State Circuits

IF5.6

2025-11-030

PRE

A 3× Offset, 2.9× Power, 1.3× Sensing Time, and 4× Area Reduction Direct Input Transfer Offset Cancel DRAM IO Sense Amplifier With Static Current-Free Pre-Sensing

一种具有静态无电流预感测功能的3×偏移、2.9×功耗、1.3×感测时间和4×面积缩减的直接输入转移偏移消除DRAM I/O感测放大器

IEEE Journal of Solid-State Circuits

IF5.6

2025-07-080

PRE

A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application

一种高密度、低泄漏、低功耗的全电压堆叠式SRAM，用于IoT应用

IEEE Journal of Solid-State Circuits

IF5.6

2025-07-010

PRE

A 14 nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage With Minimal Power Overhead

IEEE Journal of Solid-State Circuits

IF5.6

2025-04-250

PRE

A Contention-Free Wordline Supporting Circuit for High Wordline Resistance in Sub-10-nm SRAM Designs

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2024-10-010

PRE

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security

IEEE INTERNET OF THINGS JOURNAL

IF8.9

2024-08-150

PRE

Split WL 6T SRAM-Based Bit Serial Computing-in-Memory Macro With High Signal Margin and High Throughput

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2024-04-011

PRE

A Charge-Domain 4T2C eDRAM Compute-in-Memory Macro With Enhanced Variation Tolerance and Low-Overhead Data Conversion Schemes

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2024-04-010

PRE

A CNN-Based Super-Resolution Processor With Short-Term Caching for Real-Time UHD Upscaling

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2024-03-010

PRE

Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2024-01-010

PRE

A Low-Voltage Area-Efficient TSV I/O With QEC Realizing Data Rate up to 15 Gb/s for TSV Interface

低压低面积占用的TSV I/O及其具有QEC实现高达15 Gb/s的数据速率用于TSV接口

IEEE Journal of Solid-State Circuits

IF5.6

2024-01-010

PRE

An Offset-Canceled Sense Amplifier for DRAMs With Hidden Offset-Cancellation Time and Boosted Internal-Voltage-Difference

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2023-09-014

PRE

High-Precision and Low-Power Offset Canceling Tri-State Sensing Latch in NAND Flash Memory

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2023-07-010

PRE

Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2023-02-014

PRE

Local Bit-Line SRAM Architecture With Data-Aware Power-Gating Write Assist

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2023-01-012

PRE

Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

基于纳米晶Hafnia铁电场效应晶体管的功率延迟面积高效的内存处理

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-12-2813

PRE

The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications

ADVANCED FUNCTIONAL MATERIALS

IF19

2022-12-077

PRE

A Sneak Current Compensation Scheme With Offset Cancellation Sensing Circuit for ReRAM-Based Cross-Point Memory Array

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2022-04-015

PRE

SRAM Write Assist Circuit Using Cell Supply Voltage Self-Collapse With Bitline Charge Sharing for Near-Threshold Operation

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2022-03-017

PRE

Highly Accurate, Fully Digital Temperature Sensor With Curvature Correction

IEEE SENSORS JOURNAL

IF4.5

2021-10-013

PREAI

Seong-Ook Jung

个人简介

教育背景

工作经历

荣誉奖项

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