Arend M. van der Zande - Publications, H-index & Citations

Arend M. van der Zande

university of illinois urbana–champaign

42H指数

176论文数

2.5W被引数

收录论文 76

发表时间

Enhancing Hole Mobility in Monolayer WSe2 p-Type Field-Effect Transistors via Process-Induced Compression 通过工艺诱导压缩增强单层WSe2 p型场效应晶体管的空穴迁移率

ACS Nano

IF16

2026-06-11

PREAI

He Lin Zhao; Sheikh Mohd Ta-Seen Afrid; Dongyoung Yoon; Zachary Martin; Zakaria Islam; Sihan Chen; Yue Zhang; Pinshane Y. Huang; Shaloo Rakheja; Arend M. van der Zande

Quantitative Atomic Resolution Electron Ptychography of Thermal Vibrations Under In Situ Heating 原位加热下热振动的定量原子分辨电子图

ACS Nano

IF16

2026-06-01

PREAI

Sang hyun Bae; Yichao Zhang; Jeffrey Huang; He Lin Zhao; Arend M. van der Zande; Pinshane Y. Huang

Atomic and Electronic Structure of Strongly Charged Domain Walls in van der Waals α-In2Se3 强带电畴壁在范德华α-In2Se3中的原子与电子结构

Nano Letters

IF9.1

2026-04-20

PREAI

Gillian Nolan; Edmund Han; Shahriar Muhammad Nahid; Patrick Carmichael; Arend M. van der Zande; André Schleife; Pinshane Y. Huang

Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs 应变调控的谷间散射定义了n型和p型2D TMDs中的普适迁移率增强

npj 2D Materials and Applications

IF8.8

2026-03-31

OAAI

Sheikh Mohd Ta-Seen Afrid; He Lin Zhao; Arend M. van der Zande; Shaloo Rakheja

Field-Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α-In2Se3 堆叠的范德华铁电体 α-In2Se3中来自人工带电畴壁的场效应晶体管

Advanced Materials

IF26.8

2026-01-30

OAAI

Shahriar Muhammad Nahid; Haiyue Dong; Gillian M. Nolan; SungWoo Nam; Nadya Mason; Pinshane Y. Huang; Arend M. van der Zande

Atom-by-atom imaging of moiré phasons with electron ptychography 通过电子层析摄影对莫尔相位进行原子级成像

Science

IF45.8

2025-07-24

PREAI

Yichao Zhang; Ballal Ahammed; Sang Hyun Bae; Chia-Hao Lee; Jeffrey Huang; Mohammad Abir Hossain; Tawfiqur Rakib; Arend M. van der Zande; Elif Ertekin; Pinshane Y. Huang

Two-dimensional materials and heterostructures under strain 二维材料与应变下的异质结构

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-05-20

PREAI

Bolotin, Kirill I.; van der Zande, Arend M.; Wu, Stephen M.; Scott Bunch, J.

Detecting DNA translocation through a nanopore using a van der Waals heterojunction diode 使用范德华异质结二极管检测纳米孔中的DNA转运

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

IF9.1

2025-05-01

OAAI

Chen, Sihan; Huang, Siyuan; Son, Jangyup; Han, Edmund; Watanabe, Kenji; Taniguchi, Takashi; Huang, Pinshane Y.; King, William P.; Zande, Arend M. van der; Bashir, Rashid

Nano Letters Seed Grants, Take Two

NANO LETTERS

IF9.1

2024-09-19

PREAI

Odom, Teri W.; Besley, Elena; Colvin, Vicki; Dionne, Jennifer A.; Herrmann, Carmen; Nie, Guangjun; Prieto, Amy L.; van der Zande, Arend M.; Wang, Haotian

Edge-Passivated Monolayer WSe2 Nanoribbon Transistors 边缘钝化单层WSe2纳米带晶体管

ADVANCED MATERIALS

IF26.8

2024-07-18

OAAI

Chen, Sihan; Zhang, Yue; King, William P.; Bashir, Rashid; van der Zande, Arend M.

Depolarization Field-Induced Photovoltaic Effect in Graphene/α-In2Se3/Graphene Heterostructures

ACS NANO

IF16

2024-05-21

PREAI

Nahid, Shahriar Muhammad; Nam, SungWoo; van der Zande, Arend M.

Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process-Induced Strain 通过过程引起的应变增强单层MoS2晶体管中的载流子迁移率

ACS NANO

IF16

2024-05-03

PREAI

Zhang, Yue; Zhao, He Lin; Huang, Siyuan; Hossain, M. Abir; van der Zande, Arend M.

Ultrathin and Deformable Graphene Etch Mask for Fabrication of 3D Microstructures

ACS NANO

IF16

2024-04-30

PREAI

Kim, Jiwoo; Moon, Donghoon; Kim, Hyunchul; van der Zande, Arend M.; Lee, Gwan-Hyoung

Facilitated fluorination and etching of 2D materials

APPLIED SURFACE SCIENCE

IF6.9

2024-02-01

OAAI

Shin, Yongjun; Shin, Subin; Sung, Dongchul; Cha, Janghwan; Choi, Hyeong-Kyu; Jeong, Yunjo; Im, Min Ji; Kim, Yang Hui; Ahn, Seokhoon; Bae, Sukang; Lim, Joonwon; Han, Edmund; Huang, Pinshane Y.; van der Zande, Arend M. van; Hong, Suklyun; Lee, Gwan-Hyoung; Son, Jangyup

Patternable Process-Induced Strain in 2D Monolayers and Heterobilayers

ACS NANO

IF16

2024-01-24

PREAI

Zhang, Yue; Hossain, M. Abir; Hwang, Kelly J.; Ferrari, Paolo F.; Maduzia, Joseph; Pena, Tara; Wu, Stephen M.; Ertekin, Elif; van der Zande, Arend M.

Stretchable Thin-Film Transistors Based on Wrinkled Graphene and MoS2 Heterostructures

NANO LETTERS

IF9.1

2024-01-12

PREAI

Kim, Hyunchul; Zhao, He Lin; van der Zande, Arend M.

Exfoliable Transition Metal Chalcogenide Semiconductor NbSe2I2

INORGANIC CHEMISTRY

IF4.7

2024-01-04

PREAI

Qu, Kejian; Zhang, Yue; Peng, Cheng; Riedel, Zachary W.; Won, Juyeon; Zhang, Rong; Woods, Toby J.; Devereaux, Tom; van der Zande, Arend M.; Shoemaker, Daniel P.

Ultra-Tuning of nonlinear drumhead MEMS resonators by Electro-Thermoelastic buckling

MECHANICAL SYSTEMS AND SIGNAL PROCESSING

IF8.9

2023-08-01

OAAI

Kanj, Ali; Ferrari, Paolo; Zande, Arend M. van der; Vakakis, Alexander F.; Tawfick, Sameh

Nanoelectromechanical systems from two-dimensional materials

APPLIED PHYSICS REVIEWS

IF11.6

2023-07-19

PREAI

Ferrari, Paolo F.; Kim, SunPhil; van der Zande, Arend M.

Bend-Induced Ferroelectric Domain Walls in ?-In2Se3

ACS NANO

IF16

2023-04-14

PREAI

Han, Edmund; Nahid, Shahriar Muhammad; Rakib, Tawfiqur; Nolan, Gillian; Ferrari, Paolo F.; Hossain, M. Abir; Schleife, Andre; Nam, SungWoo; Ertekin, Elif; van der Zande, Arend M.; Huang, Pinshane Y.

研究方向