Thirumaleshwara N. Bhat - Publications, H-index & Citations

Thirumaleshwara N. Bhat

department of mechanical engineering

26H指数

155论文数

3.4K被引数

收录论文 22

发表时间

Dry sliding wear behavior of SiC-reinforced Al-Si eutectic metal matrix composite SiC增强的Al-Si共晶金属基复合材料的干滑动磨损行为

Scientific Reports

IF3.9

2025-11-28

OAAI

Ashwin Shetty; Thirumaleshwara Bhat; Ananda Hegde; Sathyashankara Sharma; Ravikantha Prabhu

Temperature-dependent in situ Cd substitution at Zn sites in Cu 2ZnSnS 4 thin films via sol–gel method: Experimental and DFT insights 通过溶胶-凝胶法制备的Cu₂ZnSnS₄薄膜中温度依赖性的原位Cd在Zn位点的取代：实验与DFT见解

Applied Surface Science

IF6.9

2025-08-05

PREAI

Shraddha Chennangod; Subhasmita Ray; Ashwath Subrahmanya P.; Kartick Tarafder; Thirumaleshwara N. Bhat

In-depth probing and analysis of secondary phases, Cu–Zn disorder, and defect dynamics in kesterite Cu2ZnSnS4 nano-ink thin films 对黄铜矿型Cu₂ZnSnS₄纳米油墨薄膜中的次生相、Cu–Zn无序和缺陷动力学进行深入探查与分析

Journal of Alloys and Compounds

IF6.3

2025-07-14

PREAI

Shraddha Chennangod; Nishchitha N.K.; Murari M.S.; Manjunatha Pattabi; Thirumaleshwara N. Bhat

Effects of Magnesium Content and Age Hardening Parameters on the Hardness and Ultimate Tensile Strength of SiC-Reinforced Al-Si-Mg Composites SiC增强Al-Si-Mg复合材料中镁含量和时效硬化参数对硬度和抗拉强度的影响

JOURNAL OF COMPOSITES SCIENCE

IF3.7

2024-12-31

OAAI

Shetty, Ashwin; Bhat, Thirumaleshwara; Sharma, Sathyashankara; Hegde, Ananda; Nithesh, K.; Prabhu, Ravikantha; Anne, Gajanan

Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2020-04-01

PREAI

Nigam, Adarsh; Goel, Neeraj; Bhat, Thirumaleshwara N.; Rahman, Md. Tawabur; Bin Dolmanan, Surani; Qiao, Qiquan; Tripathy, Sudhiranjan; Kumar, Mahesh

BTO/GaN heterostructure based on Schottky junction for high-temperature selective ultra-violet photo detection

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-01-05

PREAI

Pandey, B. K.; Bhat, T. N.; Roul, B.; Nanda, K. K.; Krupanidhi, S. B.

Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-06-15

PREAI

Bhat, Thirumaleshwara N.; Pandey, B. K.; Krupanidhi, S. B.

Atomic Scale Interface Manipulation, Structural Engineering, and Their Impact on Ultrathin Carbon Films in Controlling Wear, Friction, and Corrosion

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-06-27

PREAI

Dwivedi, Neeraj; Yeo, Reuben J.; Yak, Leonard J. K.; Satyanarayana, Nalam; Dhand, Chetna; Bhat, Thirumaleshwara N.; Zhang, Zheng; Tripathy, Sudhiranjan; Bhatia, Charanjit S.

Binary group III-nitride based heterostructures: band offsets and transport properties

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-09-24

OAAI

Roul, Basanta; Kumar, Mahesh; Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B.

Comment on Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system [Appl. Phys. Lett. 105, 232113 (2014)]

APPLIED PHYSICS LETTERS

IF3.6

2015-04-29

OAAI

Liu, H. F.; Dolmanan, S. B.; Bhat, T. N.; Tripathy, S.

Probing channel temperature profiles in AlxGa1-xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2014-08-18

PREAI

Kyaw, L. M.; Bera, L. K.; Liu, Y.; Bera, M. K.; Singh, S. P.; Dolmanan, S. B.; Tan, H. R.; Bhat, T. N.; Chor, E. F.; Tripathy, S.

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE

MATERIALS RESEARCH BULLETIN

IF5.7

2012-06-01

PREAI

Kumar, Mahesh; Bhat, Thirumaleshwara N.; Roul, Basanta; Rajpalke, Mohana K.; Kalghatgi, A. T.; Krupanidhi, S. B.

Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2012-02-01

PREAI

Kumar, Mahesh; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Roul, Basanta; Kalghatgi, A. T.; Krupanidhi, S. B.

Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

NANOSCALE RESEARCH LETTERS

IF4.1

2011-11-28

OAAI

Kumar, Mahesh; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Roul, Basanta; Kalghatgi, Ajit T.; Krupanidhi, S. B.

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

APPLIED PHYSICS LETTERS

IF3.6

2011-10-20

PREAI

Roul, Basanta; Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Kumar, Mahesh; Kalghatgi, A. T.; Krupanidhi, S. B.; Kumar, Nitesh; Sundaresan, A.

Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

APPLIED PHYSICS LETTERS

IF3.6

2011-10-14

PREAI

Kumar, Mahesh; Roul, Basanta; Shetty, Arjun; Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Kalghatgi, A. T.; Krupanidhi, S. B.

Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

SCRIPTA MATERIALIA

IF5.6

2011-06-01

PREAI

Rajpalke, Mohana K.; Roul, Basanta; Kumar, Mahesh; Bhat, Thirumaleshwara N.; Sinha, Neeraj; Krupanidhi, S. B.

Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (111) by plasma-assisted MBE

JOURNAL OF LUMINESCENCE

IF3.6

2011-04-01

PREAI

Kumar, Mahesh; Rajpalke, Mohana K.; Roul, Basanta; Bhat, Thirumaleshwara N.; Misra, P.; Kukreja, L. M.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

APPLIED SURFACE SCIENCE

IF6.9

2011-01-01

PREAI

Kumar, Mahesh; Rajpalke, Mohana K.; Roul, Basanta; Bhat, Thirumaleshwara N.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures

APPLIED PHYSICS LETTERS

IF3.6

2010-11-18

PREAI

Bhat, Thirumaleshwara N.; Roul, Basanta; Rajpalke, Mohana K.; Kumar, Mahesh; Krupanidhi, S. B.; Sinha, Neeraj

研究方向