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K

Ke Chang

shanghai institute of technology

H指数:12

被引数:537

浏览量:0

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Self-Powered Broadband Photodetection Driven by Asymmetric Surface Potential in Quasi-2D InAs Single Crystals

Quasi-2D InAs单晶中非对称表面电势驱动的自供电宽带光电探测

ACS Applied Materials and Interfaces

IF8.2

2026-01-270

PRE

High-Performance and Wide-Area Near-Infrared Detection via Lateral Photovoltaic Effect in Graphene/Porous Silicon/p-Si Structure

IF6.7

2026-01-230

PRE

Giant laser-induced resistive switching effect in Ag/TiOx/p-Si structures

PHYSICAL REVIEW APPLIED

IF4.4

2024-07-121

PRE

Carrier-doping-driven insulator-metal transition in disordered materials for memristive switching with high uniformity

APPLIED PHYSICS REVIEWS

IF11.6

2024-03-190

OA

Giant lateral photovoltaic effect in Ag/porous silicon/Si structure for high-performance near-infrared detection

IF17.1

2024-02-017

PRE

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System

IF9.1

2023-08-237

PRE

High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt-Ag composite active layer

APPLIED PHYSICS LETTERS

IF3.6

2023-07-2411

PRE

Assessing OSM building completeness for almost 13,000 cities globally

评估全球近13,000个城市的OSM建筑完整性

INTERNATIONAL JOURNAL OF DIGITAL EARTH

IF4.9

2022-12-1928

OA

Electrochemical-tunable and mesostructure-dependent abrupt-to-progressive conversion in fibroin-based transient memristor

APPLIED PHYSICS LETTERS

IF3.6

2022-07-1310

PRE

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS2 Quantum Dots

PHYSICAL REVIEW APPLIED

IF4.4

2022-03-026

PRE

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

APPLIED PHYSICS LETTERS

IF3.6

2022-01-1321

PRE

Compliance-Current Manipulation of Dual-Filament Switching in a Ta/Ta2O5/In-Sn-O Structure with an Ultralow Power Consumption

PHYSICAL REVIEW APPLIED

IF4.4

2021-10-266

PRE

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2021-04-2629

PREAI

Modulation of optical switching characteristics in MoS2/HfO2/p-Si structures

APPLIED PHYSICS LETTERS

IF3.6

2020-08-1910

PREAI

Bidding Machine: Learning to Bid for Directly Optimizing Profits in Display Advertising

竞价机: 学习竞价直接优化展示广告利润

IEEE TRANSACTIONS ON KNOWLEDGE AND DATA ENGINEERING

IF10.4

2018-04-0151

OAAI

InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer

APPLIED PHYSICS LETTERS

IF3.6

2010-03-3121

PREAI