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C

Calliope Bazioti

University of Oslo

H指数:16

被引数:650

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Band Offsets at β/γ-Ga2O3 Interface: A Comprehensive Ab Initio and Experimental Investigation

β/γ-Ga₂O₃界面处的带偏移：一项全面的从头算与实验研究

The Journal of Physical Chemistry C

IF3.2

2026-05-210

OA

Microtubes and nanomembranes by ion-beam-induced exfoliation of β-Ga2O3

离子束诱导剥落法制备的β-Ga2O3微管和纳米膜

Surfaces and Interfaces

IF6.3

2026-03-190

OAAI

From quaternary to senary high entropy antimonide nanoparticles by a facile and scalable thermal treatment method

MATERIALS RESEARCH BULLETIN

IF5.7

2022-09-016

OAAI

Probing the structural evolution and its impact on magnetic properties of FeCoNi(AlMn)x high-entropy alloy at the nanoscale

纳米尺度FeCoNi(AlMn)x高熵合金的结构演变及其对磁性能的影响

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-07-019

OAAI

Visible Light Driven Photocatalytic Decolorization and Disinfection of Water Employing Reduced TiO2 Nanopowders

IF4

2021-02-0915

OAAI

A Toroidal Zr70 Oxysulfate Cluster and Its Diverse Packing Structures

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

IF16.9

2020-11-1124

OAAI

Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

IF9.1

2020-11-1113

OAAI

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

SCIENTIFIC REPORTS

IF3.9

2020-10-1515

OAAI

Evidence of defect band mechanism responsible for band gap evolution in (ZnO)1-x(GaN)x alloys

PHYSICAL REVIEW B

IF3.7

2019-10-0414

OAAI

Laser-driven structural modifications and diffusion phenomena of plasmonic AlN/Ag stratified films

SURFACE & COATINGS TECHNOLOGY

IF6.1

2016-06-013

OAAI

Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2016-02-0118

PREAI

High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

通过分子束外延在AlN(0001)/Si(111) 衬底上形成高质量，大面积MoSe2和MoSe2/Bi2Se3异质结构

IF5.1

2015-01-01127

OAAI

Raman and photoluminescence mapping of InxGa1-xN (x ∼ 0.4) at high pressure: Optical determination of composition and stress

APPLIED PHYSICS LETTERS

IF3.6

2014-09-054

PREAI

Misfit dislocation reduction in In GaAs epilayers grown on porous GaAs substrates

在多孔GaAs衬底上生长的GaAs外延层中的失配位错减少

APPLIED SURFACE SCIENCE

IF6.9

2014-07-0111

PREAI

Observation of Surface Dirac Cone in High-Quality Ultrathin Epitaxial Bi2Se3 Topological Insulator on AlN(0001) Dielectric

AlN(0001) 介质上高质量超薄外延Bi2Se3拓扑绝缘体中表面狄拉克锥的观察

IF16

2014-06-2339

PREAI

Influence of laser annealing on the structural properties of sputtered AlN:Ag plasmonic nanocomposites

JOURNAL OF MATERIALS SCIENCE

IF3.9

2014-01-299

PREAI