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Ezra Bussmann

sandia national laboratory

17H指数
138论文数
762被引数
收录论文 22
发表时间
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A Reduced-Temperature Process for Preparing Atomically Clean Si(100) and SiGe(100) Surfaces with Vapor HF一种用于制备原子级清洁Si(100)和SiGe(100)表面的低温工艺(采用气相HF)
err2025-05-06
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PREAI
errPena, Luis Fabian; Anderson, Evan M.; Mudrick, John P.; Rosenberg, Samantha G.; Scrymgeour, David A.; Bussmann, Ezra; Misra, Shashank
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Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy
err2024-03-27
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errPena, Luis Fabian; Koepke, Justine C.; Dycus, Joseph Houston; Mounce, Andrew; Baczewski, Andrew D.; Jacobson, N. Tobias; Bussmann, Ezra
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Quantifying the Variation in the Number of Donors in Quantum Dots Created Using Atomic Precision Advanced Manufacturing
err2023-03-15
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PREAI
errCampbell, Quinn T.; Koepke, Justine C.; Ivie, Jeffrey A.; Mounce, Andrew M.; Ward, Daniel R.; Carroll, Malcolm S.; Misra, Shashank; Baczewski, Andrew D.; Bussmann, Ezra
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Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision
err2021-11-18
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errIvie, Jeffrey A.; Campbell, Quinn; Koepke, Justin C.; Brickson, Mitchell, I; Schultz, Peter A.; Muller, Richard P.; Mounce, Andrew M.; Ward, Daniel R.; Carroll, Malcolm S.; Bussmann, Ezra; Baczewski, Andrew D.; Misra, Shashank
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Atomic-precision advanced manufacturing for Si quantum computing
err2021-08-03
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errBussmann, Ezra; Butera, Robert E.; Owen, James H. G.; Randall, John N.; Rinaldi, Steven M.; Baczewski, Andrew D.; Misra, Shashank
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First-principles calculations of metal surfaces. II. Properties of low-index platinum surfaces toward understanding electron emission
err2021-05-20
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errSchultz, Peter A.; Hjalmarson, Harold P.; Berg, Morgann; Bussmann, Ezra; Scrymgeour, David A.; Ohta, Taisuke; Moore, Chris H.
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AlCl3-Dosed Si(100)-2 x 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al
err2021-05-19
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errRadue, Matthew S.; Baek, Sungha; Farzaneh, Azadeh; Dwyer, K. J.; Campbell, Quinn; Baczewski, Andrew D.; Bussmann, Ezra; Wang, George T.; Mo, Yifei; Misra, Shashank; Butera, R. E.
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A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2x1
err2021-01-06
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errCampbell, Quinn; Ivie, Jeffrey A.; Bussmann, Ezra; Schmucker, Scott W.; Baczewski, Andrew D.; Misra, Shashank
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Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
err2018-06-21
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errBussmann, E.; Gamble, John King; Koepke, J. C.; Laroche, D.; Huang, S. H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Swartzentruber, B. S.; Lilly, M. P.; Carroll, M. S.; Lu, T-M.
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Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures使用原子精确掩埋施主结构确定扫描微波阻抗显微镜的分辨率
err2017-11-01
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errScrymgeour, D. A.; Baca, A.; Fishgrab, K.; Simonson, R. J.; Marshall, M.; Bussmann, E.; Nakakura, C. Y.; Anderson, M.; Misra, S.
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Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)
err2016-03-15
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PREAI
errLeroy, F.; Passanante, T.; Cheynis, F.; Curiotto, S.; Bussmann, E. B.; Mueller, P.
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Probing the limits of Si:P δ-doped devices patterned by a scanning tunneling microscope in a field-emission mode
err2014-10-24
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errRudolph, M.; Carr, S. M.; Subramania, G.; Ten Eyck, G.; Dominguez, J.; Pluym, T.; Lilly, M. P.; Carroll, M. S.; Bussmann, E.
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Nonequilibrium diffusion of reactive solid islands
err2014-06-09
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errLeroy, F.; Saito, Y.; Cheynis, F.; Bussmann, E.; Pierre-Louis, O.; Mueller, P.
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Buried Pd slows self-diffusion on Cu(001)
err2011-12-21
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errBussmann, E.; Ermanoski, I.; Feibelman, P. J.; Bartelt, N. C.; Kellogg, G. L.
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Dewetting dynamics of silicon-on-insulator thin films
err2011-12-20
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PREAI
errCheynis, F.; Bussmann, E.; Leroy, F.; Passanante, T.; Mueller, P.
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