O. Brandt - Publications, H-index & Citations

O. Brandt

Leibniz Association

58H指数

487论文数

1.4W被引数

收录论文 212

发表时间

Diameter Dependence of Light Absorption in GaAs Nanowires Evidenced by Photoluminescence Spectroscopy

ADVANCED OPTICAL MATERIALS

IF7.2

2025-12-01

OAAI

Marin, Francisca; Mohamed, Ijaas; Brandt, Oliver; Geelhaar, Lutz

Corrigendum to “Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD” [Acta Materialia 297 (2025) 121357]勘误：题为“Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD”的论文 [Acta Materialia 297 (2025) 121357]

Acta Materialia

IF9.3

2025-10-30

OAAI

Vladimir M. Kaganer; Domenik Spallek; Philipp John; Oliver Brandt; Jonas Lähnemann

Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD GaN外延薄膜中的位错相关性由EBSD和XRD揭示

Acta Materialia

IF9.3

2025-07-29

OAAI

Vladimir M. Kaganer; Domenik Spallek; Philipp John; Oliver Brandt; Jonas Lähnemann

Crack-free ScxAl1-xN(000(1)over-bar) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

APL MATERIALS

IF4.5

2025-03-01

OAAI

Dinh, Duc V.; Chen, Zhuohui; Brandt, Oliver

Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-02-19

PREAI

Kang, Jingxuan; Ruiz, Mikel Gomez; Dinh, Duc Van; Campbell, Aidan F.; John, Philipp; Auzelle, Thomas; Trampert, Achim; Laehnemann, Jonas; Brandt, Oliver; Geelhaar, Lutz

Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy

APL MATERIALS

IF4.5

2024-10-28

OAAI

Ruiz, Mikel Gomez; Brubaker, Matt D.; Bertness, Kris A.; Roshko, Alexana; Tornatzky, Hans; Ramsteiner, Manfred; Brandt, Oliver; Laehnemann, Jonas

Generation of GHz surface acoustic waves in (Sc,Al)N thin films grown on free-standing polycrystalline diamond wafers by plasma-assisted molecular beam epitaxy

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-09-16

OAAI

Yuan, Mingyun; Dinh, Duc, V; Mandal, Soumen; Williams, Oliver A.; Chen, Zhuohui; Brandt, Oliver; Santos, Paulo, V

Electrical properties of ScN(111) layers grown on semi-insulating GaN(0001) by plasma-assisted molecular beam epitaxy

PHYSICAL REVIEW APPLIED

IF4.4

2024-07-25

PREAI

Dinh, Duc, V; Brandt, Oliver

ScN/GaN(1100): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures ScN/GaN(1100): 无孪晶金属半导体异质结构外延的新平台

NANO LETTERS

IF9.1

2024-05-17

OAAI

John, Philipp; Trampert, Achim; Dinh, Duc Van; Spallek, Domenik; Laehnemann, Jonas; Kaganer, Vladimir M.; Geelhaar, Lutz; Brandt, Oliver; Auzelle, Thomas

Disappearance of rapid photoresponse in ultraviolet illumination of Ag-Sb-S films

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-02-27

OAAI

Takagaki, Y.; Hanke, M.; Brandt, O.

Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

APL MATERIALS

IF4.5

2023-09-27

OAAI

van Treeck, David; Laehnemann, Jonas; Gao, Guanhui; Garrido, Sergio Fernandez; Brandt, Oliver; Geelhaar, Lutz

Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2023-09-11

OAAI

Dinh, Duc, V; Peiris, Frank; Laehnemann, Jonas; Brandt, Oliver

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

APL MATERIALS

IF4.5

2023-08-04

OAAI

van Deurzen, L.; Singhal, J.; Encomendero, J.; Pieczulewski, N.; Chang, C. S.; Cho, Y.; Muller, D. A.; Xing, H. G.; Jena, D.; Brandt, O.; Laehnemann, J.

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources (vol 9, 111110, 2021)

APL MATERIALS

IF4.5

2023-08-04

OAAI

Hoffmann, Georg; Cheng, Zongzhe; Brandt, Oliver; Bierwagen, Oliver

Lattice parameters of ScxAl1-xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2023-04-11

OAAI

Dinh, Duc V.; Laehnemann, Jonas; Geelhaar, Lutz; Brandt, Oliver

Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy

PHYSICAL REVIEW APPLIED

IF4.4

2022-04-15

OAAI

Auzelle, T.; Sinito, C.; Laehnemann, J.; Gao, G.; Flissikowski, T.; Trampert, A.; Fernandez-Garrido, S.; Brandt, O.

Carrier Diffusion in GaN: A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations

PHYSICAL REVIEW APPLIED

IF4.4

2022-02-07

OAAI

Laehnemann, Jonas; Kaganer, Vladimir M.; Sabelfeld, Karl K.; Kireeva, Anastasya E.; Jahn, Uwe; Cheze, Caroline; Calarco, Raffaella; Brandt, Oliver

Carrier Diffusion in GaN: A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion

PHYSICAL REVIEW APPLIED

IF4.4

2022-02-07

OAAI

Brandt, Oliver; Kaganer, Vladimir M.; Laehnemann, Jonas; Flissikowski, Timur; Pfueller, Carsten; Sabelfeld, Karl K.; Kireeva, Anastasya E.; Cheze, Caroline; Calarco, Raffaella; Grahn, Holger T.; Jahn, Uwe

Carrier Diffusion in GaN: A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume

PHYSICAL REVIEW APPLIED

IF4.4

2022-02-07

OAAI

Jahn, Uwe; Kaganer, Vladimir M.; Sabelfeld, Karl K.; Kireeva, Anastasya E.; Laehnemann, Jonas; Pfueller, Carsten; Flissikowski, Timur; Cheze, Caroline; Biermann, Klaus; Calarco, Raffaella; Brandt, Oliver

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

APL MATERIALS

IF4.5

2021-11-15

OAAI

Hoffmann, Georg; Cheng, Zongzhe; Brandt, Oliver; Bierwagen, Oliver

研究方向