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Chen Shang

Beijing University of Chemical Technology
H指数:33
被引数:3,166

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Suppressed defect production and hardening in refractory high entropy alloys under ion irradiation at early stage: A comparative study between VTaTi, HfNbZrTi, and conventional V-4Cr-4Ti

在离子辐照早期阶段,难熔高熵合金中的缺陷产生和硬化受到抑制:VTaTi、HfNbZrTi与常规V-4Cr-4Ti的对比研究

2025-06-170
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Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers

用于硅光子学的1.3 μ m量子点激光二极管的退化: 取决于阱中的点层数

2025-03-010
PRE