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H

Hyun-Jae Lee

ulsan national institute of science and technology

H指数:12

被引数:1,020

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Crystallized Domain Walls in HfO₂ Enable Chessboard-Type Ultra-High-Dense Ferroelectric Memory

HfO<sub>2</sub>中结晶畴壁实现棋盘型超高密度铁电存储器

Advanced Science

IF14.1

2026-09-140

OAAI

Enhanced Ionic Conductivity at the Solid Electrolyte Interphase of Oxygen-Doped Li6PS5Cl

氧掺杂Li6PS5Cl固体电解质界面的增强离子电导率

Advanced Science

IF14.1

2026-07-280

OAAI

Origin of Optimal Composition and Density for Li-Ion Diffusion in Amorphous Li–P–S Electrolytes

Li离子扩散在非晶态Li–P–S电解质中最佳组成与密度的起源

Advanced Energy Materials

IF26

2025-11-210

PRE

Ultrafast formation of porosity and heterogeneous structures on 2D oxides via momentary photothermal effect

JOURNAL OF MATERIALS CHEMISTRY A

IF9.5

2025-01-010

PRE

Lithium Localization by Anions in Argyrodite Solid Electrolytes from Machine-Learning-based Simulations

通过基于机器学习的模拟，通过阴离子在Argyrodite固体电解质中定位锂

ADVANCED ENERGY MATERIALS

IF26

2024-10-110

PRE

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

铁电HfO2薄膜中畴网络的原子尺度扫描

IF16

2024-09-120

PRE

Functional expression and extracellular secretion of Clostridium thermocellum Cel48S cellulase in Escherichia coli via the signal recognition particle-dependent translocation pathway

热纤梭菌Cel48S纤维素酶在大肠杆菌中通过信号识别颗粒依赖转运途径的功能表达和胞外分泌

ENZYME AND MICROBIAL TECHNOLOGY

IF3.7

2021-11-015

PREAI

Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

SCIENTIFIC REPORTS

IF3.9

2021-03-1850

OAAI

Role of Si Doping in Reducing Coercive Fields for Ferroelectric Switching in HfO2

PHYSICAL REVIEW APPLIED

IF4.4

2020-12-0332

PREAI

Facile Ferroelectric Phase Transition Driven by Si Doping in HfO2

INORGANIC CHEMISTRY

IF4.7

2020-04-218

PREAI

Scale-free ferroelectricity induced by flat phonon bands in HfO 2

HfO中平坦声子带引起的无标度铁电性下标2

IF45.8

2020-01-010

PREAI

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

铁电Si掺杂HfO2的稳定子环行为

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-10-0260

PREAI

Effects of controlled ambidirectional nucleation on the heteroepitaxial growth of m-GaN on m-sapphire

APPLIED PHYSICS LETTERS

IF3.6

2011-02-1416

PREAI

Use of Polytypes to Control Crystallographic Orientation of GaN

CRYSTAL GROWTH & DESIGN

IF3.4

2010-10-276

PREAI

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

APPLIED PHYSICS LETTERS

IF3.6

2009-06-1829

PREAI

Microstructural Analysis of Void Formation Due to a NH4Cl Layer for Self-Separation of GaN Thick Films

CRYSTAL GROWTH & DESIGN

IF3.4

2009-04-087

PREAI

Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [1120] to [0001]

APPLIED PHYSICS LETTERS

IF3.6

2009-03-104

PREAI

Self-separated freestanding GaN using a NH4Cl interlayer

APPLIED PHYSICS LETTERS

IF3.6

2007-11-0831

PREAI