Bernard Gil - Publications, H-index & Citations

Bernard Gil

Laboratoire Charles Coulomb

47H指数

482论文数

1.1W被引数

收录论文 92

发表时间

Two-dimensional and multi-dimensional epitaxy of indium selenide on sapphire 硒化铟在蓝宝石上的二维和多维外延生长

Communications Materials

IF9.6

2026-07-10

OAAI

Thomas Fowler; Nada Alghofaili; Tin S. Cheng; Elizabeth A. Dewes; Alexander Charlton; Jonathan Bradford; Nathan D. Cottam; Sergei V. Novikov; Christopher J. Mellor; Wilfried Desrat; Matthieu Moret; Bernard Gil; Amalia Patanè

Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite 纳米尺度能带隙调制及与石墨弱耦合的六方氮化硼双莫尔超晶格

ACS Nano

IF16

2025-10-02

OAAI

Fábio J. R. Costa; Daniel Arribas; Thiago G. L. Brito; Tin S. Cheng; Jonathan Bradford; Amelia Thompson; Alex Saywell; Christopher J. Mellor; Peter H. Beton; Sergei V. Novikov; Juliette Plo; Bernard Gil; Guillaume Cassabois; Luiz Fernando Zagonel; Klaus Kuhnke; Klaus Kern; Anna Rosławska

Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure 高压力下的磁性成像：基于自旋的量子传感器集成在范德华异质结构中

Nature Communications

IF15.7

2025-09-29

OAAI

Z. Mu; J. Fraunié; A. Durand; S. Clément; A. Finco; J. Rouquette; A. Hadj-Azzem; N. Rougemaille; J. Coraux; J. Li; T. Poirier; J. H. Edgar; I. C. Gerber; X. Marie; B. Gil; G. Cassabois; C. Robert; V. Jacques

Intralayer Carrier Diffusion and Exciton-Exciton Annihilation in Hexagonal Boron Nitride Investigated by Two-Color Pump-Probe Experiments 层内载流子扩散和激子-激子湮灭在六方氮化硼中的研究：通过双色泵浦-探测实验

Advanced Optical Materials

IF7.2

2025-07-20

PREAI

Patrik Ščajev; Saulius Miasojedovas; Guillaume Cassabois; Jiahan Li; James H. Edgar; Bernard Gil

Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride

PHYSICAL REVIEW B

IF3.7

2024-07-11

OAAI

Clua-Provost, T.; Mu, Z.; Durand, A.; Schrader, C.; Happacher, J.; Bocquel, J.; Maletinsky, P.; Fraunie, J.; Marie, X.; Robert, C.; Seine, G.; Janzen, E.; Edgar, J. H.; Gil, B.; Cassabois, G.; Jacques, V.

Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes

NANO LETTERS

IF9.1

2024-05-31

OAAI

Binder, Johannes; Dabrowska, Aleksandra Krystyna; Tokarczyk, Mateusz; Rousseau, Adrien; Valvin, Pierre; Bozek, Rafal; Nogajewski, Karol; Kowalski, Grzegorz; Pacuski, Wojciech; Gil, Bernard; Cassabois, Guillaume; Stepniewski, Roman; Wysmolek, Andrzej

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

SCIENTIFIC REPORTS

IF3.9

2024-01-02

OAAI

Shima, Kohei; Cheng, Tin S.; Mellor, Christopher J.; Beton, Peter H.; Elias, Christine; Valvin, Pierre; Gil, Bernard; Cassabois, Guillaume; Novikov, Sergei V.; Chichibu, Shigefusa F.

Boron and Nitrogen Isotope Effects on Hexagonal Boron Nitride Properties 硼和氮同位素对六方氮化硼性质的影响

ADVANCED MATERIALS

IF26.8

2023-11-23

OAAI

Janzen, Eli; Schutte, Hannah; Plo, Juliette; Rousseau, Adrien; Michel, Thierry; Desrat, Wilfried; Valvin, Pierre; Jacques, Vincent; Cassabois, Guillaume; Gil, Bernard; Edgar, James H.

A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields

NPJ COMPUTATIONAL MATERIALS

IF11.9

2023-08-22

OAAI

Udvarhelyi, Peter; Clua-Provost, Tristan; Durand, Alrik; Li, Jiahan; Edgar, James H. H.; Gil, Bernard; Cassabois, Guillaume; Jacques, Vincent; Gali, Adam

Stacking-dependent deep level emission in boron nitride

PHYSICAL REVIEW MATERIALS

IF3.4

2022-09-20

PREAI

Rousseau, A.; Valvin, P.; Elias, C.; Xue, L.; Li, J.; Edgar, J. H.; Gil, B.; Cassabois, G.

Superradiance of optical phonons in two-dimensional materials

PHYSICAL REVIEW RESEARCH

IF4.2

2022-09-12

OAAI

Cassabois, G.; Fugallo, G.; Gil, B.

Decoherence of VB- spin defects in monoisotopic hexagonal boron nitride

NATURE COMMUNICATIONS

IF15.7

2022-07-27

OAAI

Haykal, A.; Tanos, R.; Minotto, N.; Durand, A.; Fabre, F.; Li, J.; Edgar, J. H.; Ivady, V; Gali, A.; Michel, T.; Dreau, A.; Gil, B.; Cassabois, G.; Jacques, V

Phonon-assisted broadening in Bernal boron nitride: A comparison between indirect and direct excitons

PHYSICAL REVIEW B

IF3.7

2022-07-12

PREAI

Rousseau, A.; Valvin, P.; Xue, L.; Li, J.; Edgar, J. H.; Gil, B.; Cassabois, G.

Evidence of direct optical transitions in γ-In2Se3

PHYSICAL REVIEW MATERIALS

IF3.4

2022-06-06

PREAI

de Brucker, L.; Moret, M.; Gil, B.; Desrat, W.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride

PHYSICAL REVIEW X

IF15.7

2022-03-24

OAAI

Cassabois, G.; Fugallo, G.; Elias, C.; Valvin, P.; Rousseau, A.; Gil, B.; Summerfield, A.; Mellor, C. J.; Cheng, T. S.; Eaves, L.; Foxon, C. T.; Beton, P. H.; Lazzeri, M.; Segura, A.; Novikov, S., V

Porous Nitride Light-Emitting

ACS PHOTONICS

IF6.7

2022-03-09

OAAI

Amador-Mendez, Nuno; Mathieu-Pennober, Tiphaine; Vezian, Stephane; Chauvat, Marie-Pierre; Morales, Magali; Ruterana, Pierre; Babichev, Andrey; Bayle, Fabien; Julien, Francois H.; Bouchoule, Sophie; Collin, Stephane; Gil, Bernard; Tappy, Nicolas; Fontcuberta i Morral, Anna; Damilano, Benjamin; Tchernycheva, Maria

Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopy 通过深紫外低温显微镜鉴定的Bernal氮化硼晶体

ACS NANO

IF16

2022-01-31

PREAI

Rousseau, Adrien; Valvin, Pierre; Desrat, Wilfried; Xue, Lianjie; Li, Jiahan; Edgar, James H.; Cassabois, Guillaume; Gil, Bernard

Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures

APPLIED PHYSICS LETTERS

IF3.6

2021-12-27

OAAI

Moret, Matthieu; Rousseau, Adrien; Valvin, Pierre; Sharma, Sachin; Souqui, Laurent; Pedersen, Henrik; Hogberg, Hans; Cassabois, Guillaume; Li, Jianhan; Edgar, J. H.; Gil, Bernard

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

CHEMISTRY OF MATERIALS

IF7

2021-11-18

PREAI

Li, Jiahan; Glaser, Evan R.; Elias, Christine; Ye, Gaihua; Evans, Dylan; Xue, Lianjie; Liu, Song; Cassabois, Guillaume; Gil, Bernard; Valvin, Pierre; Pelini, Thomas; Yeats, Andrew L.; He, Rui; Liu, Bin; Edgar, James H.

Ultrafast nonlinear phonon response of few-layer hexagonal boron nitride

PHYSICAL REVIEW B

IF3.7

2021-10-11

OAAI

Kang, Taehee; Zhang, Jia; Kundu, Achintya; Reimann, Klaus; Woerner, Michael; Elsaesser, Thomas; Gil, Bernard; Cassabois, Guillaume; Flytzanis, Christos; Fugallo, Giorgia; Lazzeri, Michele; Page, Ryan; Jena, Debdeep

研究方向