Tuan V. Vu - Publications, H-index & Citations

Tuan V. Vu

van lang university

38H指数

226论文数

5.4K被引数

收录论文 104

发表时间

Electronic properties, piezoelectricity, and electron-phonon scattering limited carrier mobility in Janus MBNSe2 (M = Ti, Zr, Hf) monolayers 单层Janus MBNSe2（M = Ti, Zr, Hf）的电子性质、压电性和电子-声子散射限制的载流子迁移率

Surfaces and Interfaces

IF6.3

2026-08-01

PREAI

Vu, Tuan V.; Phuc, Huynh V.; Nguyen, Binh T. T.; Kartamyshev, A. i.; Nguyen, Cuong Q.

Impact of top-electrode size and substrate clamping on the longitudinal piezoelectric coefficient of PZT films 顶电极尺寸和基底夹持对PZT薄膜纵向压电系数的影响

Ceramics International

IF5.6

2026-07-17

PREAI

M.D. Nguyen; T.V. Vu; T.H. Ho; G. Rijnders

Exploring vibrational properties; Rashba spin splitting; and phonon-limited carrier mobility in Janus WBPX2 (X = S; Se; Te) monolayers 探索Janus WBPX2（X = S; Se; Te）单层材料的振动性质、拉什巴自旋劈裂以及声子限制的载流子迁移率

rsc adv.

IF0

2026-05-20

OAAI

Tuan V. Vu; Le T. Hoa; Huynh V. Phuc; A. I. Kartamyshev; Nguyen N. Hieu; Vo T. T. Vi

Vibrational behaviors; piezoelectricity; spin-splitting; and carrier mobility in Janus HWSZ (Z = N; P; As) monolayers 振动行为；压电性；自旋劈裂；以及Janus HWSZ (Z = N; P; As) 单层的载流子迁移率

rsc adv.

IF0

2026-05-18

OAAI

A. I. Kartamyshev; Tuan V. Vu; A. A. Lavrentyev; Nguyen D. Hien

First-principles study of AlGaSi2X6 (X = S; Se; Te) monolayers: structural; electronic; transport and photocatalytic properties 基于第一性原理的AlGaSi2X6 (X = S; Se; Te) 单层材料研究：结构、电子、传输及光催化性质

rsc adv.

IF0

2026-05-06

OAAI

Thi H. Ho; Tuan V. Vu; A. I. Kartamyshev; Dat D. Vo; Duy Khanh Nguyen; Nguyen N. Hieu

First-principles insights into the Janus MoPC monolayer as a promising anode for sodium-ion batteries 基于第一性原理对Janus MoPC单层作为钠离子电池有前景的负极材料的见解

rsc adv.

IF0

2026-04-03

OAAI

Tuan V. Vu; Duc-Quang Hoang; Thi H. Ho; Hien D. Tong; Khang D. Pham †

DFT study of halogenated InTeX (X = Cl, Br and I) monolayers: promising 2D materials for nanoelectronics 卤素化InTeX（X = Cl, Br和I）单层材料的DFT研究：纳米电子领域有前景的二维材料

RSC Advances

IF4.6

2026-02-16

OAAI

Vu, Tuan V.; Vo, Dat D.; Khyzhun, Oleg; Piasecki, Michal; Ho, Thi H.; Hieu, Nguyen N.

Unveiling the phonon scattering limited intrinsic carrier mobility and electronic; mechanical; and piezoelectric properties of novel Janus CrBZS2 (Z = N; P; As) monolayers

Journal of Physics D: Applied Physics

IF3.2

2026-02-03

PREAI

Le V Hung; Nguyen N Hieu; Le T T Phuong; A I Kartamyshev; Huynh V Phuc; Tuan V Vu

Role of electron–phonon coupling in charge transport of Janus WBN X2 ( X= S, Se, Te) monolayers: A first-principles analysis 电子-声子耦合在Janus WBN X2 ( X = S，Se，Te) 单层电荷传输中的作用: 第一性原理分析

physica e: low-dimensional systems and nanostructures

IF0

2026-01-08

PREAI

Tuan V. Vu; Vo T.T. Vi; A.I. Kartamyshev; Huynh V. Phuc; Nguyen T. Hiep; Nguyen N. Hieu

Controlling the crystallinity of Aurivillius Bi4Ti3O12 films for energy storage applications 控制Aurivillius Bi4Ti3O12薄膜的结晶度以用于能量存储应用

Journal of the European Ceramic Society

IF6.2

2025-12-11

PREAI

M.D. Nguyen; T.V. Vu; T.H. Ho; H.D. Tong; G. Rijnders

Following Flavin's Vibrational Modes to Probe Anharmonicities and Low-Lying Conical Intersections 追踪Flavin的振动模式以探测非谐性和低能圆锥形交叉

JOURNAL OF PHYSICAL CHEMISTRY B

IF2.9

2025-12-01

PREAI

Vu, Vy; Gozem, Samer

BP3 Monolayer as a High-Capacity and Rapid-Diffusion Anode for Sodium-Ion Batteries: A First-Principles Study BP3单层作为高容量和快速扩散的钠离子电池负极：一项第一性原理研究

Nanoscale Adv.

IF0

2025-11-28

OAAI

Tuan V. Vu; Duc-Quang Hoang; Thi Huynh Ho; Chi Van Hoang; Khang D. Pham

Electron–Phonon Scattering Dominated Intrinsic Mobility in Janus MBNS2 (M = Ti; Zr; Hf) Monolayers 电子-声子散射主导的本征迁移率在Janus MBNS2 (M = Ti; Zr; Hf) 单层材料中

The Journal of Physical Chemistry C

IF3.2

2025-10-27

PREAI

Tuan V. Vu; Le V. Hung; Le T. T. Phuong; Huynh V. Phuc; Chuong V. Nguyen; Andrey I. Kartamyshev; Nguyen N. Hieu

Two-dimensional TaS2 as a contact material for MXene Sc2CF2 semiconductors: a first-principles study 二维TaS2作为MXene Sc2CF2半导体的接触材料：第一性原理研究

RSC Adv.

IF0

2025-10-20

OAAI

Tuan V. Vu; Phan T. T. Huyen; Nguyen N. Hieu; Huynh V. Phuc; Chuong V. Nguyen

First-principles investigation of the electronic; piezoelectric and transport properties of InSeX (X = Cl; Br; I) monolayers 基于第一性原理的InSeX (X = Cl; Br; I)单层材料的电子、压电及输运性质研究

Nanoscale Adv.

IF4.6

2025-09-22

OAAI

Vo Duy Dat; Tuan V. Vu; Andrey I. Kartamyshev; Thi Huynh Ho; Hoang-Thinh Do; Hoang K.H. Bui; Phan T.H. Linh; Nguyen Dinh Hien

Energy storage performance of all-oxide lead-free thin-film capacitors on mica-flexible substrates 在云母柔性基底上的全氧化物铅-free薄膜电容器的储能性能

Journal of Alloys and Compounds

IF6.3

2025-09-01

PREAI

M.D. Nguyen; T.V. Vu; H.N. Vu; G. Rijnders

Variables influencing coated nanoparticle sintering under dynamic compression 影响动态压缩下涂层纳米颗粒烧结的变量

MRS Bulletin

IF4.9

2025-07-02

PREAI

J. Matthew D. Lane; Tuan V. Vu; Tuan A. Ho; Hongyou Fan

SnSb monolayer: A promising 2D candidate for high sensitivity NO2 gas sensing SnSb单层：一种有前途的高灵敏度NO2气体传感2D候选材料

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-05-01

PREAI

Vu, Tuan V.; Ho, Thi H.; Hoang, Duc-Quang; Chi, Hoang Van; Pham, Khang D.

Energy storage performance of silicon-integrated Sr0.98Mn0.02TiO3 thin film capacitors 硅集成Sr0.98Mn0.02TiO3薄膜电容器的储能性能

MATERIALS CHEMISTRY AND PHYSICS

IF4.7

2025-02-01

PREAI

Nguyen, M. D.; Vo, D. D.; Vu, T. V.; Houwman, E. P.

Raman activity and high electron mobility of piezoelectric semiconductor GaSiX2 (X = N, P, and As) toward flexible nanoelectronic devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-01-13

PREAI

Vu, Tuan V.; Hiep, Nguyen T.; Vi, Vo T. T.; Phuc, Huynh, V; Kartamyshev, A., I; Hieu, Nguyen N.

研究方向