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N

Nguyen N. Hieu

Duy Tan University

47H指数
345论文数
8.0K被引数
收录论文 101
发表时间
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Tunable topological phases and magneto-optical signatures in monolayer Pt 2 HgSe 3可调拓扑相及单层Pt₂HgSe₃中的磁光特征
errCHAOS SOLITONS & FRACTALS
IF5.6
err2026-07-11
err0
PREAI
errHuynh V. Phuc; Nguyen N. Hieu; Chuong V. Nguyen
err分享
err收藏
Exploring vibrational properties; Rashba spin splitting; and phonon-limited carrier mobility in Janus WBPX2 (X = S; Se; Te) monolayers探索Janus WBPX2（X = S; Se; Te）单层材料的振动性质、拉什巴自旋劈裂以及声子限制的载流子迁移率
errrsc adv.
IF0
err2026-05-20
err0
errOAAI
errTuan V. Vu; Le T. Hoa; Huynh V. Phuc; A. I. Kartamyshev; Nguyen N. Hieu; Vo T. T. Vi
err分享
err收藏
First-principles study of AlGaSi2X6 (X = S; Se; Te) monolayers: structural; electronic; transport and photocatalytic properties基于第一性原理的AlGaSi2X6 (X = S; Se; Te) 单层材料研究：结构、电子、传输及光催化性质
errrsc adv.
IF0
err2026-05-06
err0
errOAAI
errThi H. Ho; Tuan V. Vu; A. I. Kartamyshev; Dat D. Vo; Duy Khanh Nguyen; Nguyen N. Hieu
err分享
err收藏
DFT study of halogenated InTeX (X = Cl, Br and I) monolayers: promising 2D materials for nanoelectronics卤素化InTeX（X = Cl, Br和I）单层材料的DFT研究：纳米电子领域有前景的二维材料
errRSC Advances
IF4.6
err2026-02-16
err0
errOAAI
errVu, Tuan V.; Vo, Dat D.; Khyzhun, Oleg; Piasecki, Michal; Ho, Thi H.; Hieu, Nguyen N.
err分享
err收藏
Unveiling the phonon scattering limited intrinsic carrier mobility and electronic; mechanical; and piezoelectric properties of novel Janus CrBZS2 (Z = N; P; As) monolayers
errJournal of Physics D: Applied Physics
IF3.2
err2026-02-03
err0
PREAI
errLe V Hung; Nguyen N Hieu; Le T T Phuong; A I Kartamyshev; Huynh V Phuc; Tuan V Vu
err分享
err收藏
Role of electron–phonon coupling in charge transport of Janus WBN X2 ( X= S, Se, Te) monolayers: A first-principles analysis电子-声子耦合在Janus WBN X2 ( X = S，Se，Te) 单层电荷传输中的作用: 第一性原理分析
errphysica e: low-dimensional systems and nanostructures
IF0
err2026-01-08
err0
PREAI
errTuan V. Vu; Vo T.T. Vi; A.I. Kartamyshev; Huynh V. Phuc; Nguyen T. Hiep; Nguyen N. Hieu
err分享
err收藏
Electron–Phonon Scattering Dominated Intrinsic Mobility in Janus MBNS2 (M = Ti; Zr; Hf) Monolayers电子-声子散射主导的本征迁移率在Janus MBNS2 (M = Ti; Zr; Hf) 单层材料中
errThe Journal of Physical Chemistry C
IF3.2
err2025-10-27
err0
PREAI
errTuan V. Vu; Le V. Hung; Le T. T. Phuong; Huynh V. Phuc; Chuong V. Nguyen; Andrey I. Kartamyshev; Nguyen N. Hieu
err分享
err收藏
Two-dimensional TaS2 as a contact material for MXene Sc2CF2 semiconductors: a first-principles study二维TaS2作为MXene Sc2CF2半导体的接触材料：第一性原理研究
errRSC Adv.
IF0
err2025-10-20
err0
errOAAI
errTuan V. Vu; Phan T. T. Huyen; Nguyen N. Hieu; Huynh V. Phuc; Chuong V. Nguyen
err分享
err收藏
Magnetic transport properties of topological Dirac semimetal slabs拓扑狄拉克半金属板的磁输运性质
errJOURNAL OF PHYSICS-CONDENSED MATTER
IF2.6
err2025-09-08
err0
PREAI
errHieu, Nguyen N.; Hoa, Le T.; Bich, Tran N.; Kubakaddi, S. S.; Phuc, Huynh, V
err分享
err收藏
Interface Engineering and Electric Contact Design of van der Waals Goldene/As2C3 Heterostructure for Flexible Electronics范德瓦尔斯黄金烯/As2C3异质结构的界面工程与电接触设计用于柔性电子学
errLangmuir
IF3.9
err2025-08-04
err0
PREAI
errChuong V. Nguyen; Pham T. Truong; Le M. Duc; Huynh V. Phuc; Nguyen V. Hieu; Tran P. T. Linh; Nguyen T. Hiep; Cuong Q. Nguyen; Nguyen N. Hieu
err分享
err收藏
Electronic properties and interfacial engineering of metal–semiconductor 1T-; 2H-Ta2B MBene/Janus MoSSe heterostructures金属-半导体1T-/2H-Ta2B MBene/单层MoSSe异质结构的电子性质与界面工程
errNanoscale
IF5.1
err2025-07-27
err0
PREAI
errPham T. Truong; Nguyen N. Hieu; Hieu V. Nguyen; Cuong Q. Nguyen; Tran P. T. Linh; Huynh V. Phuc; Chuong V. Nguyen
err分享
err收藏
Magneto-optical absorption properties of silicene: Equations of motion method硅烯的磁光吸收特性：运动方程方法
errPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
IF2.9
err2025-07-01
err0
PREAI
errHieu, Nguyen N.; Thu, Vo T. Anh; Tien, Dao T.; Tam, Nguyen T.; Phuc, Huynh V.
err分享
err收藏
Electric field-driven the electronic properties and contact behavior of the metal/semiconductor NbS2/Sc2CF2 heterostructure
errDALTON TRANSACTIONS
IF3.3
err2025-04-01
err0
PREAI
errTran, Thi Nhan; Truong, Pham T.; Phuc, Huynh V.; Hieu, Nguyen N.; Phung, Viet Bac Thi; Nguyen, Chuong V.
err分享
err收藏
Raman activity, piezoelectric response, and carrier mobility in two-dimensional Janus TiGeZ3H (Z = N, P, As) semiconductors: A first-principles prediction二维Janus TiGeZ3H (Z = N，P，As) 半导体中的拉曼活性，压电响应和载流子迁移率: 第一性原理预测
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-03-01
err0
PREAI
errKartamyshev, A. I.; Hieu, Nguyen N.; Poklonski, N. A.; Hieu, Nguyen V.; Vu, Tuan V.; Lavrentyev, A. A.; Phuc, Huynh V.
err分享
err收藏
High stability Janus structures of two dimensional Fe3GeTe2 monolayer by first-principles investigations
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-02-01
err0
PREAI
errHiep, Nguyen T.; Khan, Dinh T.; Thao, Le T. P.; Nguyen, Cuong Q.; Hoi, Bui D.; Phuc, Huynh V.; Hieu, Nguyen N.
err分享
err收藏
Raman activity and high electron mobility of piezoelectric semiconductor GaSiX2 (X = N, P, and As) toward flexible nanoelectronic devices
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2025-01-13
err0
PREAI
errVu, Tuan V.; Hiep, Nguyen T.; Vi, Vo T. T.; Phuc, Huynh, V; Kartamyshev, A., I; Hieu, Nguyen N.
err分享
err收藏
First principles exploring the tunable electronic and optical features of silicane/γ-GeSe heterostructures for advanced electronic devices从第一性原理出发，探索硅烯/γ-GeSe异质结构的可调电子和光学特性，以用于先进电子器件。
errNANOSCALE ADVANCES
IF4.6
err2025-01-01
err0
errOAAI
errAnh, Nguyen P. Q.; Cuu, Ho V.; Tan, Truong; Nguyen, Chuong V.; Hieu, Nguyen N.
err分享
err收藏
First principles unveiling the metallic TaS2/GeC heterostructure as an anode material in sodium-ion batteries第一性原理揭示金属TaS2/GeC异质结构作为钠离子电池负极材料
errRSC ADVANCES
IF4.6
err2025-01-01
err0
errOAAI
errTran, Thi Nhan; Pham, Khang D.; Nguyen, Chuong V.; Hieu, Nguyen N.
err分享
err收藏
Two-dimensional piezoelectric AlSiX2 (X = N, P, As) semiconductors with Raman activity, favorable band-gap, and high carrier mobility based on first-principles calculations基于第一性原理计算，具有拉曼活性的二维压电AlSiX2（X = N, P, As）半导体，其具有适宜的带隙和高载流子迁移率。
errPHYSICAL CHEMISTRY CHEMICAL PHYSICS
IF2.9
err2025-01-01
err0
PREAI
errVu, Tuan V.; Hieu, Nguyen N.; Hiep, Nguyen T.; Trinh, Thuat T.; Kartamyshev, A. I.
err分享
err收藏
Raman response, piezoelectricity, and transport properties of the two-dimensional Janus HfSiX3H (X = N/P/As) semiconductors: A first-principles study
errPHYSICAL REVIEW B
IF3.7
err2024-12-02
err1
PREAI
errVu, Tuan V.; Hiep, Nguyen T.; Phuc, Huynh V.; Hoi, Bui D.; Kartamyshev, A. I.; Hieu, Nguyen N.
err分享
err收藏

研究方向

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合作期刊
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