Norio Tokuda

Kanazawa University

H指数:32

被引数:3,161

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Selective etching of atomically flat diamond (111) surfaces using H₂+N₂ plasma etching

利用H<sub>2</sub>+N<sub>2</sub>等离子体选择性蚀刻原子级平坦的钻石(111)表面

Carbon

IF11.6

2026-09-120

OAAI

Selective homoepitaxial growth of buried diamond films with NV centers

Carbon

IF11.6

2026-01-290

PRE

Suppression of on-resistance variability by buried source/drain structures in inversion type diamond MOSFETs

通过埋置源/漏结构抑制反型型金刚石MOSFET的导通电阻变异性

Diamond and Related Materials

IF5.1

2025-12-160

OAAI

Formation of diamond trenches with flat {111} sidewalls via thermochemical etching by Ni films in water vapor

通过Ni薄膜在蒸汽中的热化学刻蚀，形成具有平坦{111}侧壁的金刚石沟槽

Applied Surface Science Advances

IF8.7

2025-11-090

OAAI

Effects of nitrogen addition on hydrogen plasma etching of diamond

氮添加对金刚石氢等离子体刻蚀的影响

Diamond and Related Materials

IF5.1

2025-11-050

OAAI

Diamond (111) homoepitaxy via hot-filament chemical vapor deposition: Growth mode, transition metal incorporation, and twin formation

金刚石 (111) 同质外延生长通过热丝化学气相沉积：生长模式、过渡金属掺入和孪晶形成

Diamond and Related Materials

IF5.1

2025-10-210

OAAI

Switching reduction selectivity of diamond electrodes with heavily N-doped surface nanolayers by visible light irradiation

通过可见光照射实现表面重氮掺杂纳米层金刚石电极的开关减少选择性

Carbon

IF11.6

2025-07-230

PRE

First-principles study of interface states in diamond(111)/Al 2O 3 with different terminations

基于第一性原理的金刚石(111)/氧化铝界面态在不同终止情况下的研究

Surfaces and Interfaces

IF6.3

2025-07-190

PRE

Control of impurity incorporation into CVD diamond synthesized with tert-butylphosphine for quantum applications

APPLIED PHYSICS LETTERS

IF3.6

2025-02-190

PRE

Formation of low-dimensional nanopit structures on atomically flat surfaces of diamond (111) by nickel nanoparticles

APPLIED SURFACE SCIENCE

IF6.9

2024-10-010

OAAI

Diamond Homoepitaxial Growth Technology toward Wafer Fabrication, Atomically Controlled Surfaces, and Low Resistivity

ACCOUNTS OF MATERIALS RESEARCH

IF14.7

2024-08-140

Electrostatic layer-by-layer deposition of diamond nanoparticles onto substrate surfaces

CARBON TRENDS

IF3.9

2022-10-013

OAAI

Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (111) by homoepitaxial lateral growth

通过同质外延横向生长在N掺杂金刚石 (111) 中具有无台阶表面的重B掺杂金刚石层的选择性掩埋生长

APPLIED SURFACE SCIENCE

IF6.9

2022-08-016

OAAI

Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

APPLIED PHYSICS LETTERS

IF3.6

2021-12-1419

Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method

APPLIED PHYSICS LETTERS

IF3.6

2020-09-0314

OAAI

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

APPLIED PHYSICS LETTERS

IF3.6

2019-06-1721

OAAI

Formation of atomically flat hydroxyl-terminated diamond (111) surfaces via water vapor annealing

APPLIED SURFACE SCIENCE

IF6.9

2018-11-0126

PREAI

Quantitative relevance of substitutional impurities to carrier dynamics in diamond

PHYSICAL REVIEW MATERIALS

IF3.4

2018-09-0415

OAAI

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour

SCIENTIFIC REPORTS

IF3.9

2018-04-2761

OAAI

Mechanism of anisotropic etching on diamond (111) surfaces by a hydrogen plasma treatment

通过氢等离子体处理在金刚石 (111) 表面上进行各向异性蚀刻的机理

APPLIED SURFACE SCIENCE

IF6.9

2017-11-0126

PREAI

Norio Tokuda

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