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J

Ji-Hwan Kwon

Korea Research Institute of Standards and Science
H指数:15
被引数:1,064

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Correction to “Accurate Assessments of the Electronic Structures of Ultrathin PtSe2: Bandgap Quantification and Critical Thickness for the Metal–Semiconductor Transition”

对“Ultrathin PtSe2 Electronic Structures的精确评估:带隙量化及金属-半导体转变的临界厚度”的更正

2025-10-080
OAAI
Abnormal Silicon Etching Behaviors in Nanometer-Sized Channels
2024-04-011
PRE
Toward a Nanoscale-Defect-Free Ni-Rich Layered Oxide Cathode Through Regulated Pore Evolution for Long-Lifespan Li Rechargeable Batteries

通过调节孔隙演化获得无纳米级缺陷的富镍层状氧化物阴极,用于长寿命锂可充电电池

2023-10-064
PRE