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Sangwoo Lim

Yonsei University

H指数:29

被引数:3,307

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Scaling of Si nanosheets in 3D semiconductor devices through SiGe surface passivation and lateral loss suppression in NH4OH-(CH3)3COH-(NH4)2S system

通过SiGe表面钝化和NH4OH-(CH3)3COH-(NH4)2S体系中的横向损耗抑制实现Si纳米片在三维半导体器件中的缩放

Applied Surface Science

IF6.9

2026-09-290

PRE

Control of selective SiGe etching by enhanced formation of hydroxyl radicals and by surface passivation in peracetic acid solution

APPLIED SURFACE SCIENCE

IF6.9

2024-07-011

PRE

Understanding the contributions of F-, HF, and HF2-to the etching of SiO2 and unveiling the reaction kinetics to represent etching behavior of SiO2 up to pH 5

了解F-，HF和HF2-to对SiO2蚀刻的贡献，并揭示反应动力学以表示pH 5以下的SiO2蚀刻行为

APPLIED SURFACE SCIENCE

IF6.9

2024-06-014

PRE

Behavior of oxide regrowth during the selective Si3N4 etching process on 3D NAND structures using finite element computational simulations

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY

IF6

2024-02-010

PRE

Enhancement of selective SiGe dissolution through facilitated surface oxidation by formation of hydroxyl radicals in peracetic acid solution

通过在过氧乙酸溶液中形成羟基自由基促进表面氧化来增强选择性SiGe溶解

APPLIED SURFACE SCIENCE

IF6.9

2024-01-011

PRE

Effect of addition of amino acids with hydrophilic side chains to low-concentration H3PO4 for improvement of Si3N4 etching kinetics and oxide regrowth phenomena on multi-layered Si3N4/SiO2 structures

APPLIED SURFACE SCIENCE

IF6.9

2023-11-012

PRE

Effect of dissolved oxygen on surface oxidation and dissolution of InGaAs and its impact on AsGa, AsIn, and VAs defect generation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-10-010

PRE

Improvement of Si3N4/SiO2 etching selectivity through the passivation of SiO2 surface in aromatic carboxylic acid-added H3PO4 solutions for the 3D NAND integration

APPLIED SURFACE SCIENCE

IF6.9

2023-05-018

PRE

Passivation of poly-Si surface using vinyl and epoxy group additives for selective Si3N4 etching in H3PO4 solution

APPLIED SURFACE SCIENCE

IF6.9

2023-01-015

PRE

Chemical modification of subcritical water for the dissolution of Si3N4 layer in the fabrication of microelectronic devices

JOURNAL OF SUPERCRITICAL FLUIDS

IF4.4

2022-10-011

PRE

Control of adhesion and desorption behavior of silica particles on InGaAs surfaces by addition of hexadecyltrimethylammonium bromide in ammonium hydroxide-hydrogen peroxide mixture solution

APPLIED SURFACE SCIENCE

IF6.9

2022-07-019

PRE

Addition of Carboxylic Acids to Superheated Water for the Environmentally Benign Removal of Silicon Nitrides

ACS SUSTAINABLE CHEMISTRY & ENGINEERING

IF7.3

2021-11-084

PRE

Phosphoric acid-peroxide mixture surface preparation for the improvement of InGaAs channel characteristics

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY

IF6

2021-10-012

PREAI

Understanding of Si3N4-H3PO4 reaction chemistry for the control of Si3N4 dissolution kinetics

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY

IF6

2021-10-0115

PREAI

Straightforward formation of dianionic acetonylate: self-assembly of mercury(ii) with pyridyl donor ligands in acetone

DALTON TRANSACTIONS

IF3.3

2021-01-011

PRE

Interfacial ZnS passivation for improvement of transparent ZnO/CuI diode characteristics

界面ZnS钝化改善透明ZnO/CuI二极管特性

APPLIED SURFACE SCIENCE

IF6.9

2021-01-0110

PREAI

Flexibility and anion exchange of [(X)@Pd2L4] cages for recognition of size and charge of polyatomic anions

DALTON TRANSACTIONS

IF3.3

2020-01-0115

PREAI

Addition of nitrate to superheated water and its reaction mechanism with C-C cross-linked ion-implanted photoresists

APPLIED SURFACE SCIENCE

IF6.9

2019-12-012

PREAI

Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY

IF6

2019-09-013

PREAI

Polarization behavior of polyvinylidene fluoride films with the addition of reduced graphene oxide

添加还原氧化石墨烯的聚偏氟乙烯薄膜的极化行为

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY

IF6

2018-11-0120

PREAI