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Bouraoui Ilahi

King Saud University

H指数:20

被引数:1,189

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Tailoring Ge membrane adhesion strength: Impact of growth parameters and porous layer thickness

MATERIALS CHARACTERIZATION

IF5.5

2024-10-010

OAAI

Post-growth tuning of detachable Ge membranes adhesion strength via porous Ge transformation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-09-010

OAAI

Wafer-scale porous germanium bilayer structure formation by fast bipolar electrochemical etching

THIN SOLID FILMS

IF2

2024-06-010

OAAI

Sequential fabrication of multiple Ge nanomembranes from a single wafer: Towards sustainable recycling of Ge substrates

SUSTAINABLE MATERIALS AND TECHNOLOGIES

IF9.2

2024-04-013

PRE

Sustainable Production of Ultrathin Ge Freestanding Membranes

IF3.3

2024-02-081

OA

High-Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology

IF4.7

2024-01-034

OA

Potential monitoring during Ge electrochemical etching: Towards tunable double porosity layers

ELECTROCHIMICA ACTA

IF5.6

2024-01-015

PRE

Germanium surface wet-etch-reconditioning for porous lift-off and substrate reuse

用于多孔剥离和衬底再利用的锗表面湿法蚀刻修复

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-12-017

OAAI

High-Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology

IF4.7

2023-11-233

OAAI

Wafer-scale Ge freestanding membranes for lightweight and flexible optoelectronics

MATERIALS TODAY ADVANCES

IF8

2023-06-0116

OAAI

Large-Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties

ADVANCED MATERIALS INTERFACES

IF4.4

2023-04-1317

OA

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

NATURE COMMUNICATIONS

IF15.7

2022-11-0417

OAAI

Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate

JOURNAL OF LUMINESCENCE

IF3.6

2021-03-013

OAAI

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

通过MOCVD在300毫米Ge缓冲的Si (001) 衬底上生长的O带发射InAs量子点

IF4.3

2020-12-076

OAAI

Terahertz photoconductivity and photocarrier dynamics in graphene-mesoporous silicon nanocomposites

PHYSICAL REVIEW B

IF3.7

2020-09-092

PREAI

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field

垂直电场作用下GeSn量子点的子带间光学非线性

IF3

2019-04-127

OAAI

Sputter deposited GeSn alloy: A candidate material for temperature sensing layers in uncooled microbolometers

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2019-03-0116

PREAI

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots

直接带隙GeSn量子点的线性和非线性子带间光学性质

IF4.3

2019-01-1922

OAAI

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

NANOSCALE RESEARCH LETTERS

IF4.1

2018-06-0710

OAAI

Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-05-0111

PREAI