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R. Butté

epfl

42H指数
198论文数
6.2K被引数
收录论文 88
发表时间
Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics溅射AlN缓冲层用于低损耗蓝宝石上晶态AlN集成光子学
err2026-02-10
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errOAAI
errSamuele Brunetta; Samantha Sbarra; Brandon Shuen Yi Loke; Jean-François Carlin; Nicolas Grandjean; Camille-Sophie Brès; Raphaël Butté
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VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells
err2025-03-01
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errOAAI
errToschi, Anna; Chen, Yao; Carlin, Jean-Francois; Butte, Raphael; Grandjean, Nicolas
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Quantifying carbon site switching dynamics in GaN by electron holography
err2025-02-24
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errOAAI
errJi, K.; Schnedler, M.; Lan, Q.; Carlin, J. -f.; Butte, R.; Grandjean, N.; Dunin-Borkowski, R. E.; Ebert, Ph.
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Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode
err2024-10-15
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PREAI
errKervazo, R.; Perin, G.; Congar, A.; Lablonde, L.; Butte, R.; Grandjean, N.; Bodiou, L.; Charrier, J.; Trebaol, S.
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Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
err2023-12-29
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errOAAI
errElhajhasan, Mahmoud; Seemann, Wilken; Dudde, Katharina; Vaske, Daniel; Callsen, Gordon; Rousseau, Ian; Weatherley, Thomas F. K.; Carlin, Jean-Francois; Butte, Raphael; Grandjean, Nicolas; Protik, Nakib H.; Romano, Giuseppe
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Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
err2023-09-16
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errOAAI
errLottigier, Pierre; Di Paola, Davide Maria; Alexander, Duncan T. L.; Weatherley, Thomas F. K.; Modrono, Pablo Saenz de Santa Maria; Chen, Danxuan; Jacopin, Gwenole; Carlin, Jean-Francois; Butte, Raphael; Grandjean, Nicolas
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
err2023-02-02
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errOAAI
errDelphan, Anthonin; Makhonin, Maxim N.; Isoniemi, Tommi; Walker, Paul M.; Skolnick, Maurice S.; Krizhanovskii, Dmitry N.; Skryabin, Dmitry V.; Carlin, Jean-Francois; Grandjean, Nicolas; Butte, Raphael
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Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
err2021-06-09
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errOAAI
errDi Paola, D. M.; Walker, P. M.; Emmanuele, R. P. A.; Yulin, A. V.; Ciers, J.; Zaidi, Z.; Carlin, J. -F.; Grandjean, N.; Shelykh, I.; Skolnick, M. S.; Butte, R.; Krizhanovskii, D. N.
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Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
err2021-06-04
err29
errOAAI
errWeatherley, Thomas F. K.; Liu, Wei; Osokin, Vitaly; Alexander, Duncan T. L.; Taylor, Robert A.; Carlin, Jean-Francois; Butte, Raphael; Grandjean, Nicolas
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Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces
err2020-12-21
err5
PREAI
errWang, Y.; Schnedler, M.; Lan, Q.; Zheng, F.; Freter, L.; Lu, Y.; Breuer, U.; Eisele, H.; Carlin, J-F; Butte, R.; Grandjean, N.; Dunin-Borkowski, R. E.; Ebert, Ph
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Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
err2020-12-01
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errOAAI
errPolyakov, A. Y.; Haller, C.; Butte, R.; Smirnov, N. B.; Alexanyan, L. A.; Kochkova, A. I.; Shikoh, S. A.; Shchemerov, I. V.; Chernykh, A. V.; Lagov, P. B.; Pavlov, Yu S.; Carlin, J. -F.; Mosca, M.; Grandjean, N.; Pearton, S. J.
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Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides
err2020-10-19
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errOAAI
errCiers, J.; Solnyshkov, D. D.; Callsen, G.; Kuang, Y.; Carlin, J-F; Malpuech, G.; Butte, R.; Grandjean, N.
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Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
err2020-08-11
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errOAAI
errPolyakov, A. Y.; Haller, C.; Butte, R.; Smirnov, N. B.; Alexanyan, L. A.; Shikoh, A. S.; Shchemerov, I., V; Chernykh, S., V; Lagov, P. B.; Pavlov, Yu S.; Kochkova, A., I; Carlin, J. F.; Mosca, M.; Grandjean, N.; Pearton, S. J.
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Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
err2020-06-04
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errOAAI
errLiu, W.; Haller, C.; Chen, Y.; Weatherley, T.; Carlin, J. -F.; Jacopin, G.; Butte, R.; Grandjean, N.
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Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
err2020-04-28
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errOAAI
errTamariz, Sebastian; Callsen, Gordon; Stachurski, Johann; Shojiki, Kanako; Butte, Raphael; Grandjean, Nicolas
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III-nitride photonic cavitiesIII族氮化物光子腔
err2020-01-15
err25
errOAAI
errButte, Raphael; Grandjean, Nicolas
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GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
err2018-09-14
err105
errOAAI
errHaller, C.; Carlin, J. -F.; Jacopin, G.; Liu, W.; Martin, D.; Butte, R.; Grandjean, N.
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A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities
err2018-02-08
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errOAAI
errJagsch, Stefan T.; Trivino, Noelia Vico; Lohof, Frederik; Callsen, Gordon; Kalinowski, Stefan; Rousseau, Ian M.; Barzel, Roy; Carlin, Jean-Francois; Jahnke, Frank; Butte, Raphael; Gies, Christopher; Hoffmann, Axel; Grandjean, Nicolas; Reitzenstein, Stephan
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Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
err2018-01-17
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errOAAI
errButte, Raphael; Lahourcade, Lise; Uzdavinys, Tomas Kristijonas; Callsen, Gordon; Mensi, Mounir; Glauser, Marlene; Rossbach, Georg; Martin, Denis; Carlin, Jean-Francois; Marcinkevicius, Saulius; Grandjean, Nicolas
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Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
err2017-12-26
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errOAAI
errHaller, C.; Carlin, J. -F.; Jacopin, G.; Martin, D.; Butte, R.; Grandjean, N.
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