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Fengrui Sui

East China Normal University

H指数:8

被引数:551

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Breathing ferroelectricity, flat-bands and multiple chiral phonons in van der Waals breathing kagome Nb3Cl8

呼吸铁电性、平带和多种手性声子存在于范德瓦尔斯呼吸 Kagome 结构 Nb3Cl8 中

Nature Communications

IF15.7

2026-08-080

OAAI

Giant Linear Dichroism and Valley Energetic Polarization in van der Waals Group-IV Monochalcogenide Semiconductors

巨线性二色性和谷能极化在范德华IV族单硫属化物半导体中

IF16

2026-05-290

PRE

Intrinsic Sliding Ferroelectricity and High‐Quality Superlinear Emission in Van der Waals γ‐InSe Semiconductor

Advanced Functional Materials

IF19

2025-05-230

OA

Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides (vol 16, 1810, 2025)

非常规（反）铁电性在范德华IV族单硫属化物中（卷16，1810，2025）

NATURE COMMUNICATIONS

IF15.7

2025-04-250

OA

Comparative study of doping properties and the effect on sliding barriers in γ-InSe

γ-InSe中掺杂性质及其对滑动势垒影响的比较研究

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-03-030

OA

Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides

非常规（反）铁电性在范德华IV族单硫属化物中

NATURE COMMUNICATIONS

IF15.7

2025-02-201

OA

Influence of interface on the domain polarization orientation in ferroelectric Hf0.5Zr0.5O2 thin films

界面对铁电Hf0.5Zr0.5O2薄膜畴极化取向的影响

CERAMICS INTERNATIONAL

IF5.6

2024-12-010

PRE

Chiral Phonon, Valley Polarization, and Inter/Intravalley Scattering in a van der Waals ReSe2 Semiconductor

范德华ReSe2半导体中的手性声子，谷极化和谷间/谷内散射

IF16

2024-11-290

PRE

In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments

朝向极化选择带对准的SnSe2/SnSe垂直异质结构的原位形成

IF12.1

2024-08-181

PRE

Atomic-level polarization reversal in sliding ferroelectric semiconductors (vol 15, 3799, 2024)

NATURE COMMUNICATIONS

IF15.7

2024-05-230

OAAI

Atomic-level polarization reversal in sliding ferroelectric semiconductors

滑动铁电半导体中的原子级极化反转

NATURE COMMUNICATIONS

IF15.7

2024-05-0713

OAAI

Cobalt doped spinel LiMn2O4 cathode toward high-rate performance lithium-ion batteries

IF3.9

2024-01-0110

PRE

Atomic insight into the BEOL thermal budget on phase transition of phase change memory cells

APPLIED PHYSICS LETTERS

IF3.6

2023-10-180

PRE

Unveiling the role of Ni doping in the electrochemical performance improvement of the LiMn2O4 cathodes

APPLIED SURFACE SCIENCE

IF6.9

2023-07-0121

PRE

High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-01-2712

PRE

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

NATURE COMMUNICATIONS

IF15.7

2023-01-0382

OAAI

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

IF5.1

2023-01-012

PRE

Microstructurally Tailored Thin β-Ag2Se Films toward Commercial Flexible Thermoelectrics

ADVANCED MATERIALS

IF26.8

2022-01-0269

PRE

FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector

IF3

2021-12-223

OAAI