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Hongyang Chen

Institute of Microelectronics of the Chinese Academy of Sciences

13H指数
42论文数
615被引数
收录论文 9
发表时间
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Preparation and oxidation properties of tantalum-based Yb2O3 modified MoSi2 ceramic coating钽基Yb2O3改性MoSi2陶瓷涂层的制备与氧化性能
err2025-05-20
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PREAI
errLairong Xiao; Guanzhi Deng; Xiaojun Zhao; Yuxiang Jiang; Hongyang Chen; Qinglong Yu; Haitao Dong; Jiarui Li; Sainan Liu; Zhenyang Cai
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Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene
err2015-06-23
err15
errOAAI
errChen, H. -H.; Su, S. H.; Chang, S. -L.; Cheng, B. -Y.; Chen, S. W.; Chen, H. -Y.; Lin, M. -F.; Huang, J. C. A.
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