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S
S. Yu. Karpov
st. petersburg scientific centre of the russian academy of sciences
37
H指数
231
论文数
4.7K
被引数
0
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23
发表时间
发表时间
IF
被引数
Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
NANOMATERIALS
IF
4.3
2023-04-14
4
OA
AI
Barettin, Daniele; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Nikolaev, Andrey E.; Pecchia, Alessandro; Maur, Matthias Auf Der; Karpov, Sergey Yu.; Cherkashin, Nikolay
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Two-dimensional hole gas formation at the κ-Ga2O3/AlN heterojunction interface
JOURNAL OF ALLOYS AND COMPOUNDS
IF
6.3
2023-03-01
14
OA
AI
Polyakov, A. Y.; Nikolaev, V. I.; Pechnikov, A. I.; Yakimov, E. B.; Karpov, S. Yu.; Stepanov, S. I.; Shchemerov, I. V.; Vasilev, A. A.; Chernykh, A. V.; Kuznetsov, A.; Lee, In-Hwan; Pearton, S. J.
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Towards Efficient Electrically-Driven Deep UVC Lasing: Challenges and Opportunities
NANOMATERIALS
IF
4.3
2022-12-31
7
OA
AI
Nikishin, Sergey; Bernussi, Ayrton; Karpov, Sergey
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Critical aspects of AlGaInP-based LED design and operation revealed by full electrical-thermal-optical simulations
OPTICS EXPRESS
IF
3.3
2021-10-15
6
OA
AI
Fedorova, Olga A.; Bulashevich, Kirill A.; Karpov, Sergey Yu
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GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface
APPLIED PHYSICS LETTERS
IF
3.6
2021-03-15
23
OA
AI
Chen, Yao; Haller, Camille; Liu, Wei; Karpov, Sergey Yu; Carlin, Jean-Francois; Grandjean, Nicolas
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Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects
MATERIALS
IF
3.2
2017-11-18
16
OA
AI
Titkov, Ilya E.; Karpov, Sergey Yu.; Yadav, Amit; Mamedov, Denis; Zerova, Vera L.; Rafailov, Edik
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Carrier localization in InGaN by composition fluctuations: implication to the green gap
PHOTONICS RESEARCH
IF
7.2
2017-02-23
52
PRE
AI
Karpov, Sergey Yu.
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Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode
LASER & PHOTONICS REVIEWS
IF
10
2016-11-22
19
OA
AI
Titkov, Ilya E.; Yadav, Amit; Karpov, Sergey Yu.; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Slight, Thomas J.; Gorodetsky, Andrei; Rafailov, Edik U.
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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
APPLIED PHYSICS LETTERS
IF
3.6
2016-10-18
95
PRE
AI
Nippert, Felix; Karpov, Sergey Yu.; Callsen, Gordon; Galler, Bastian; Kure, Thomas; Nenstiel, Christian; Wagner, Markus R.; Strassburg, Martin; Lugauer, Hans-Juergen; Hoffmann, Axel
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Bendable III-N Visible Light-Emitting Diodes beyond Mechanical Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain
ACS PHOTONICS
IF
6.7
2016-02-19
21
PRE
AI
Shervin, Shahab; Kim, Seung-Hwan; Asadirad, Mojtaba; Karpov, S. Yu.; Zimina, Dania; Ryou, Jae-Hyun
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ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review
OPTICAL AND QUANTUM ELECTRONICS
IF
4
2014-10-25
204
PRE
AI
Karpov, Sergey
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Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops
APPLIED PHYSICS LETTERS
IF
3.6
2013-10-10
51
PRE
AI
Lobanova, A. V.; Kolesnikova, A. L.; Romanov, A. E.; Karpov, S. Yu.; Rudinsky, M. E.; Yakovlev, E. V.
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Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
APPLIED PHYSICS LETTERS
IF
3.6
2011-02-15
32
PRE
AI
Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I. -H.; Sun, Q.; Han, J.; Karpov, S. Yu.
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Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity
APPLIED PHYSICS LETTERS
IF
3.6
2010-08-05
37
PRE
AI
Durnev, M. V.; Omelchenko, A. V.; Yakovlev, E. V.; Evstratov, I. Yu; Karpov, S. Yu
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Mechanism of carrier injection in (Ni/Au)/p-AlxGa1-xN:MgO(0≤X<0.1) Ohmic contacts
APPLIED PHYSICS LETTERS
IF
3.6
2009-10-19
5
PRE
AI
Nikishin, S.; Chary, I.; Borisov, B.; Kuryatkov, V.; Kudryavtsev, Yu.; Asomoza, R.; Karpov, S. Yu.; Holtz, M.
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Simulation of visible and ultra-violet group-III nitride light emitting diodes
JOURNAL OF COMPUTATIONAL PHYSICS
IF
3.8
2006-03-01
61
PRE
AI
Bulashevich, KA; Mymrin, VF; Karpov, SY; Zhmakin, IA; Zhmakin, AI
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Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode
APPLIED PHYSICS LETTERS
IF
3.6
2005-12-05
13
PRE
AI
Bulashevich, KA; Evstratov, IY; Nabokov, VN; Karpov, SY
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Statistical model of ternary group-III nitrides
PHYSICAL REVIEW B
IF
3.7
2004-12-01
45
PRE
AI
Karpov, SY; Podolskaya, NI; Zhmakin, IA; Zhmakin, AI
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Advanced model for the simulation of BST-film growth with MOCVD
SYNTHETIC METALS
IF
4.6
2003-06-01
3
PRE
AI
Vorob'ev, AN; Archakov, IY; Bord, OV; Smirnov, SA; Karpov, SY; Makarov, YN; Reinhold, M; Schumacher, M; Heuken, M
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Dislocation effect on light emission efficiency in gallium nitride
APPLIED PHYSICS LETTERS
IF
3.6
2002-12-16
194
PRE
AI
Karpov, SY; Makarov, YN
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研究方向
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S
S. J. Pearton
H 指数: 115 · 论文数: 2.9K
H
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H 指数: 88 · 论文数: 1.8K
N
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H 指数: 71 · 论文数: 787
A
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H 指数: 63 · 论文数: 566
J
Jung Han
H 指数: 61 · 论文数: 506
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