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S. Yu. Karpov

st. petersburg scientific centre of the russian academy of sciences

37H指数
231论文数
4.7K被引数
收录论文 23
发表时间
Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
err2023-04-14
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errOAAI
errBarettin, Daniele; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Nikolaev, Andrey E.; Pecchia, Alessandro; Maur, Matthias Auf Der; Karpov, Sergey Yu.; Cherkashin, Nikolay
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Two-dimensional hole gas formation at the κ-Ga2O3/AlN heterojunction interface
err2023-03-01
err14
errOAAI
errPolyakov, A. Y.; Nikolaev, V. I.; Pechnikov, A. I.; Yakimov, E. B.; Karpov, S. Yu.; Stepanov, S. I.; Shchemerov, I. V.; Vasilev, A. A.; Chernykh, A. V.; Kuznetsov, A.; Lee, In-Hwan; Pearton, S. J.
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Towards Efficient Electrically-Driven Deep UVC Lasing: Challenges and Opportunities
err2022-12-31
err7
errOAAI
errNikishin, Sergey; Bernussi, Ayrton; Karpov, Sergey
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GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface
err2021-03-15
err23
errOAAI
errChen, Yao; Haller, Camille; Liu, Wei; Karpov, Sergey Yu; Carlin, Jean-Francois; Grandjean, Nicolas
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Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects
err2017-11-18
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errOAAI
errTitkov, Ilya E.; Karpov, Sergey Yu.; Yadav, Amit; Mamedov, Denis; Zerova, Vera L.; Rafailov, Edik
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Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode
err2016-11-22
err19
errOAAI
errTitkov, Ilya E.; Yadav, Amit; Karpov, Sergey Yu.; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Slight, Thomas J.; Gorodetsky, Andrei; Rafailov, Edik U.
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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
err2016-10-18
err95
PREAI
errNippert, Felix; Karpov, Sergey Yu.; Callsen, Gordon; Galler, Bastian; Kure, Thomas; Nenstiel, Christian; Wagner, Markus R.; Strassburg, Martin; Lugauer, Hans-Juergen; Hoffmann, Axel
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Bendable III-N Visible Light-Emitting Diodes beyond Mechanical Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain
err2016-02-19
err21
PREAI
errShervin, Shahab; Kim, Seung-Hwan; Asadirad, Mojtaba; Karpov, S. Yu.; Zimina, Dania; Ryou, Jae-Hyun
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Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops
err2013-10-10
err51
PREAI
errLobanova, A. V.; Kolesnikova, A. L.; Romanov, A. E.; Karpov, S. Yu.; Rudinsky, M. E.; Yakovlev, E. V.
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Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
err2011-02-15
err32
PREAI
errPolyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I. -H.; Sun, Q.; Han, J.; Karpov, S. Yu.
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Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity
err2010-08-05
err37
PREAI
errDurnev, M. V.; Omelchenko, A. V.; Yakovlev, E. V.; Evstratov, I. Yu; Karpov, S. Yu
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Mechanism of carrier injection in (Ni/Au)/p-AlxGa1-xN:MgO(0≤X<0.1) Ohmic contacts
err2009-10-19
err5
PREAI
errNikishin, S.; Chary, I.; Borisov, B.; Kuryatkov, V.; Kudryavtsev, Yu.; Asomoza, R.; Karpov, S. Yu.; Holtz, M.
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Simulation of visible and ultra-violet group-III nitride light emitting diodes
err2006-03-01
err61
PREAI
errBulashevich, KA; Mymrin, VF; Karpov, SY; Zhmakin, IA; Zhmakin, AI
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Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode
err2005-12-05
err13
PREAI
errBulashevich, KA; Evstratov, IY; Nabokov, VN; Karpov, SY
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Statistical model of ternary group-III nitrides
err2004-12-01
err45
PREAI
errKarpov, SY; Podolskaya, NI; Zhmakin, IA; Zhmakin, AI
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Advanced model for the simulation of BST-film growth with MOCVD
err2003-06-01
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PREAI
errVorob'ev, AN; Archakov, IY; Bord, OV; Smirnov, SA; Karpov, SY; Makarov, YN; Reinhold, M; Schumacher, M; Heuken, M
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