Yoonmyung Lee

sungkyunkwan university

H指数:34

被引数:3,737

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Logic-embedded PUF with Periphery-free and Synthesized Implementation for Low Design and Area Cost IoT Security

具有无外围和合成实现的低设计及面积成本物联网安全的逻辑嵌入型PUF

IEEE Transactions on Information Forensics and Security

IF8

2026-09-250

PRE

Multidimensional Optoelectronic Neuromorphic Vision Using Anisotropic Ferroelectric Heterostructures

利用各向异性铁电异质结构的多维光电神经形态视觉

Advanced Functional Materials

IF19

2026-09-180

PRE

Multispectral image fusion via heterogeneous integration of broadband image sensor and sub‑Boltzmann Transistors on CMOS

通过宽带图像传感器与亚玻尔兹曼晶体管在CMOS上的异构集成实现多光谱图像融合

Nature Communications

IF15.7

2026-07-220

OAAI

A 14.6× DR Output Power-Tracking CSCR SC Energy-Harvesting Interface Achieving 90.4%End-to-End Efficiency With Exponential DCO

具有14.6倍动态范围输出功率跟踪的CSCR开关电容能量收集接口，采用指数型DCO实现端到端效率达90.4%

IEEE Transactions on Power Electronics

IF6.5

2025-12-310

PRE

Timing-Dependent Spiking Neural Network: Board-Level Hardware Implementation with Photoelectroactive Van der Waals Synapses

时序依赖脉冲神经网络：基于光电活性范德华突触的板级硬件实现

Advanced Materials

IF26.8

2025-12-080

PRE

Steep-Switching Memory FET for Noise-Resistant Reservoir Computing System

陡峭开关记忆场效应晶体管（Memory FET）用于抗噪声容错计算系统

Advanced Functional Materials

IF19

2025-08-270

OAAI

Uniqueness and future perspectives of 2D ferroelectric devices: applications in emerging computing paradigms and hardware security

二维铁电器件的独特性与未来展望：在新兴计算范式和硬件安全中的应用

Mater. Horiz.

IF10.7

2025-08-210

PRE

Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors

基于铁电场效应晶体管的可重构存储内时序逻辑实现

ACS NANO

IF16

2025-01-022

PRE

Ferroelectric Stochasticity in 2D CuInP2S6 and Its Application for True Random Number Generator

二维CuInP2S6的铁电随机性及其在真随机数发生器中的应用

ADVANCED MATERIALS

IF26.8

2024-07-160

PRE

A 6T-SRAM-Based Physically-Unclonable-Function With Low BER Through Automated Maximum Mismatch Detection

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2024-07-012

PRE

The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non-Volatile Devices

ADVANCED SCIENCE

IF14.1

2024-06-172

OAAI

Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications

具有铁电范德华异质结构的人工视觉系统，用于内存计算应用

ACS NANO

IF16

2023-10-2611

PRE

Variation-Tolerant and Low R-Ratio Compute-in-Memory ReRAM Macro With Capacitive Ternary MAC Operation

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2022-07-0110

PRE

A Continuously-Scalable-Conversion-Ratio Step-Up/Down SC Energy-Harvesting Interface With MPPT Enabled by Real-Time Power Monitoring With Frequency-Mapped Capacitor DAC

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2022-04-0123

PRE

A Differential Flip-Flop With Static Contention-Free Characteristics in 28 nm for Low-Voltage, Low-Power Applications

一种适用于低压、低功耗应用的具有静态无竞争特性的差分触发器

IEEE Journal of Solid-State Circuits

IF5.6

2022-01-010

PRE

A Harvesting Circuit for Flexible Thin-Film Piezoelectric Generator Achieving 562% Energy Extraction Improvement With Load Screening

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2021-12-015

PREAI

A Charge-Domain Scalable-Weight In-Memory Computing Macro With Dual-SRAM Architecture for Precision-Scalable DNN Accelerators

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2021-08-0153

PREAI

Dual Piezoelectric Energy Investing and Harvesting Interface for High-Voltage Input

SENSORS

IF3.5

2021-03-282

OAAI

Biologically Plausible Artificial Synaptic Array: Replicating Ebbinghaus' Memory Curve with Selective Attention

ADVANCED MATERIALS

IF26.8

2021-02-2841

PREAI

An Ultra-Low-Power Fully-Static Contention-Free Flip-Flop With Complete Redundant Clock Transition and Transistor Elimination

IEEE Journal of Solid-State Circuits

IF5.6

2021-01-010

PREAI

Yoonmyung Lee

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