未登录

J

J. R. Sun

Donghua University

H指数:19

被引数:1,014

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Diverse Responses in Lattice Thermal Conductivity of n-Type/p-Type Wurtzite Semiconductors Driven by Asymmetric Electron-Phonon Interactions

由不对称电子-声子相互作用驱动的n型/ p型纤锌矿半导体晶格热导率的多样性响应

Advanced Science

IF14.1

2025-10-270

OAAI

Self-heating aggravation in MOSFETs induced by size-dependent lattice thermal conductivity of semiconductors

半导体尺寸依赖的晶格热导率引起的MOSFET自加热恶化

International Communications in Heat and Mass Transfer

IF6.4

2025-09-240

PRE

Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon-phonon and phonon-electron scattering

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain

通过高效剪切应变在宽温度范围内释放金刚石的高空穴迁移率

APPLIED PHYSICS REVIEWS

IF11.6

2025-02-041

OA

Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron-Phonon Scattering

IF9.1

2024-08-061

OA

Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations

PHYSICAL REVIEW B

IF3.7

2024-04-244

OA

Polar and tropical regioisomeric decanuclear cuprofullerenes

INORGANIC CHEMISTRY FRONTIERS

IF6.4

2024-01-010

PRE

Light Atomic Mass Induces Low Lattice Thermal Conductivity in Janus Transition-Metal Dichalcogenides MSSe (M=Mo, W)

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-08-237

PRE

The thermoelectric performance of new structure SnSe studied by quotient graph and deep learning potential

MATERIALS TODAY ENERGY

IF8.6

2021-06-0170

PREAI

In-situ observation of self-regulated switching behavior in WO3-x based resistive switching devices

APPLIED PHYSICS LETTERS

IF3.6

2014-09-1521

PREAI

Evolution of conduction channel and its effect on resistance switching for Au-WO3-x-Au devices

SCIENTIFIC REPORTS

IF3.9

2014-02-1124

OAAI

Characteristics of different types of filaments in resistive switching memories investigated by complex impedance spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2013-06-2460

PREAI

Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2013-06-1026

PREAI

Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

APPLIED PHYSICS LETTERS

IF3.6

2012-11-1335

PREAI

Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgOx/Mg0.2Zn0.8O/Pt device

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2012-10-0413

PREAI

Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface

APPLIED PHYSICS LETTERS

IF3.6

2012-09-2750

PREAI

Magnetoresistance and magnetocaloric properties involving strong metamagnetic behavior in Fe-doped Ni45(Co1-xFex)5Mn36.6In13.4 alloys

APPLIED PHYSICS LETTERS

IF3.6

2012-07-0252

PREAI

Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2011-06-087

PREAI

Resistance switching at the interface of LaAlO3/SrTiO3

APPLIED PHYSICS LETTERS

IF3.6

2010-09-2041

OAAI

The influence of film thickness on photovoltaic effect for the Fe3O4/SrTiO3:Nb heterojunctions

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2010-05-0611

PREAI