N. Cherkashin - Publications, H-index & Citations

N. Cherkashin

national academy of sciences of belarus (nasb)

29H指数

223论文数

2.8K被引数

收录论文 36

发表时间

High Temperature Operation and Spectral Stability of InGaN/GaN Ring Microlasers on Silicon 硅基InGaN/GaN环形微激光器的高温工作与光谱稳定性

IEEE Photonics Technology Letters

IF2.5

2026-02-15

PREAI

Kryzhanovskaya, Natalia V.; Komarov, Sergey D.; Moiseev, Eduard I.; Ivanov, Konstantin A.; Masyutin, Dmitry A.; Makhov, Ivan S.; Tsatsul'nikov, Andrey F.; Sakharov, Alexey V.; Arteev, Dmitry S.; Lutsenko, Evgenii V.; Vainilovich, Aliaksei G.; Nikolaev, Andrey E.; Zavarin, Evgeniy E.; Pivovarova, Antonina A.; Il'inskaya, Natalia D.; Smirnova, Irina P.; Markov, Lev K.; Cherkashin, Nikolay; Zhukov, Alexey E.

Optically Induced Irreversible Ferroelastic and Ferroelectric Switching in Epitaxial BaTiO3 Films on Silicon 在硅衬底上外延BaTiO3薄膜的光诱导不可逆铁弹性及铁电性开关

ACS Nano

IF16

2025-10-23

OAAI

Ibukun Olaniyan; Alfredo Blázquez Martínez; Valentin Väinö Hevelke; Sven Wiesner; Rong Wu; Thanh Luan Phan; Robin Cours; Nikolay Cherkashin; Sylvie Schamm-Chardon; Dong-Jik Kim; Catherine Dubourdieu

Ferroelectricity in Single-Crystalline BaTiO3 Nanodisks on Silicon 硅基单晶BaTiO3纳米盘中的铁电性

Advanced Functional Materials

IF19

2025-08-06

OAAI

Ibukun Olaniyan; Jürgen Albert; Beatriz Canabarro; Haidong Lu; Sven Wiesner; Nikolay Cherkashin; Alexei Gruverman; Sylvie Schamm-Chardon; Dong-Jik Kim; Catherine Dubourdieu

High temperature evolution of interfacial metal film bonding two 4H-SiC substrates

APPLIED SURFACE SCIENCE

IF6.9

2025-02-01

OAAI

Le Cunff, Maelle; Rieutord, Francois; Landru, Didier; Kononchuk, Oleg; Cherkashin, Nikolay

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

NANOMATERIALS

IF4.3

2023-04-14

OAAI

Barettin, Daniele; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Nikolaev, Andrey E.; Pecchia, Alessandro; Maur, Matthias Auf Der; Karpov, Sergey Yu.; Cherkashin, Nikolay

Electromechanically Coupled III-N Quantum Dots

NANOMATERIALS

IF4.3

2023-01-05

OAAI

Barettin, Daniele; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Nikolaev, Andrey E.; Cherkashin, Nikolay

Experimentally-Verified Modeling of InGaAs Quantum Dots

NANOMATERIALS

IF4.3

2022-06-08

OAAI

Kosarev, Alexander N.; Chaldyshev, Vladimir V.; Cherkashin, Nikolay

Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

NANOMATERIALS

IF4.3

2021-06-30

OAAI

Luong, Minh; Cherkashin, Nikolay; Pecassou, Beatrice; Sabbione, Chiara; Mazen, Frederic; Claverie, Alain

Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H+ ions implanted LiTaO3

APPLIED PHYSICS LETTERS

IF3.6

2021-02-26

OAAI

Louiset, Antonin; Schamm-Chardon, Sylvie; Kononchuk, Oleg; Cherkashin, Nikolay

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substratesE

OPTICS EXPRESS

IF3.3

2018-05-16

OAAI

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu. M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Zhukov, A. E.; Denneulin, T.; Cherkashin, N.

Electron microscopy by specimen design: application to strain measurements 样品设计的电子显微镜: 应用于应变测量

SCIENTIFIC REPORTS

IF3.9

2017-09-29

OAAI

Cherkashin, Nikolay; Denneulin, Thibaud; Hytch, Martin J.

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed (vol 6, 25328, 2016)

SCIENTIFIC REPORTS

IF3.9

2016-09-22

OAAI

Renard, Charles; Moliere, Timothee; Cherkashin, Nikolay; Alvarez, Jose; Vincent, Laetitia; Jaffre, Alexandre; Hallais, Geraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

SCIENTIFIC REPORTS

IF3.9

2016-05-04

OAAI

Renard, Charles; Moliere, Timothee; Cherkashin, Nikolay; Alvarez, Jose; Vincent, Laetitia; Jaffre, Alexandre; Hallais, Geraldine; Patrick Connolly, James; Mencaraglia, Denis; Bouchier, Daniel

Modelling of point defect complex formation and its application to H+ ion implanted silicon

ACTA MATERIALIA

IF9.3

2015-10-01

PREAI

Cherkashin, N.; Darras, F. -X.; Pochet, P.; Reboh, S.; Ratel-Ramond, N.; Claverie, A.

Local stress-induced effects on AlGaAs/AlOx oxidation front shape

APPLIED PHYSICS LETTERS

IF3.6

2014-07-31

OAAI

Chouchane, F.; Almuneau, G.; Cherkashin, N.; Arnoult, A.; Lacoste, G.; Fontaine, C.

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

NANO LETTERS

IF9.1

2014-03-13

OAAI

Qiu, Yang; Cristiano, Fuccio; Huet, Karim; Mazzamuto, Fulvio; Fisicaro, Giuseppe; La Magna, Antonin; Quillec, Maurice; Cherkashin, Nikolay; Wang, Huiyuan; Duguay, Sebastien; Blavette, Didier

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation 锗含量对离子注入过程中硅锗合金非晶化的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2013-12-01

PREAI

Belafhaili, A.; Laanab, L.; Cristiano, F.; Cherkashin, N.; Claverie, A.

Effect of H-implantation in the local elastic properties of silicon crystals

APPLIED PHYSICS LETTERS

IF3.6

2013-10-28

OAAI

Reboh, S.; Rieutord, F.; Vignoud, L.; Mazen, F.; Cherkashin, N.; Zussy, M.; Landru, D.; Deguet, C.

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

APPLIED PHYSICS LETTERS

IF3.6

2013-05-03

OAAI

Cherkashin, N.; Reboh, S.; Hytch, M. J.; Claverie, A.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.; Chaldyshev, V. V.

Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy

APPLIED SURFACE SCIENCE

IF6.9

2012-09-01

PREAI

Vincent, L.; Fossard, F.; Kociniewski, T.; Largeau, L.; Cherkashin, N.; Hytch, M. J.; Debarre, D.; Sauvage, T.; Claverie, A.; Boulmer, J.; Bouchier, D.

研究方向