F. Scholz - Publications, H-index & Citations

F. Scholz

institute of physics of the azerbaijan national academy of sciences

50H指数

625论文数

1.1W被引数

收录论文 94

发表时间

Role of directly grown multiwalled carbon nanotube as intermediate layers for GaN on c-plane sapphire 直接生长的多壁碳纳米管作为GaN在c面蓝宝石上中间层的作用

Journal of Crystal Growth

IF2

2025-11-01

PREAI

Gahramanova, Gulnaz; Jabbarov, Rasim; Rettig, Oliver; Amiraslanov, Imamaddin; Mammadova, Irada; Scholz, Ferdinand

Polarization anisotropy and valence band ordering in semipolar (11(2)over-tilde2) AlInN/GaN heterostructures

PHYSICAL REVIEW B

IF3.7

2023-01-05

PREAI

Sidikejiang, Shawutijiang; Henning, Philipp; Rossow, Uwe; Bremers, Heiko; Scholz, Ferdinand; Hangleiter, Andreas

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-09-16

393

OAAI

Amano, Hiroshi; Collazo, Ramon; Santi, Carlo De; Einfeldt, Sven; Funato, Mitsuru; Glaab, Johannes; Hagedorn, Sylvia; Hirano, Akira; Hirayama, Hideki; Ishii, Ryota; Kashima, Yukio; Kawakami, Yoichi; Kirste, Ronny; Kneissl, Michael; Martin, Robert; Mehnke, Frank; Meneghini, Matteo; Ougazzaden, Abdallah; Parbrook, Peter J.; Rajan, Siddharth; Reddy, Pramod; Roemer, Friedhard; Ruschel, Jan; Sarkar, Biplab; Scholz, Ferdinand; Schowalter, Leo J.; Shields, Philip; Sitar, Zlatko; Sulmoni, Luca; Wang, Tao; Wernicke, Tim; Weyers, Markus; Witzigmann, Bernd; Wu, Yuh-Renn; Wunderer, Thomas; Zhang, Yuewei

Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga-In-N Quantum Wells

SENSORS

IF3.5

2020-07-28

OAAI

Naskar, Nilanjon; Schneidereit, Martin F.; Huber, Florian; Chakrabortty, Sabyasachi; Veith, Lothar; Mezger, Markus; Kirste, Lutz; Fuchs, Theo; Diemant, Thomas; Weil, Tanja; Behm, R. Juergen; Thonke, Klaus; Scholz, Ferdinand

Bio sensing with InGaN-heterostructures using a compact spectrometer approach

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2020-02-01

PREAI

Schneidereit, Martin F.; Scholz, Ferdinand; Huber, Florian; Schieferdecker, Holger; Thonke, Klaus; Naskar, Nilanjon; Weil, Tanja; Pasquarelli, Alberto

Measuring strain caused by ion implantation in GaN

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-08-01

PREAI

Mendes, P.; Lorenz, K.; Alves, E.; Schwaiger, S.; Scholz, F.; Magalhaes, S.

GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2017-03-01

PREAI

Heinz, Dominik; Huber, Florian; Spiess, Maximilian; Asad, Muhammad; Wu, Linyuan; Rettig, Oliver; Wu, Donghao; Neuschl, Benjamin; Bauer, Sebastian; Wu, Yuzhou; Chakrabortty, Sabyasachi; Hibst, Nicolas; Strehle, Steffen; Weil, Tanja; Thonke, Klaus; Scholz, Ferdinand

Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a (10<(1)overbar>1) semipolar GaN template

APPLIED PHYSICS LETTERS

IF3.6

2017-01-12

PREAI

Li, Yueliang; Qi, Haoyuan; Meisch, Tobias; Hocker, Matthias; Thonke, Klaus; Scholz, Ferdinand; Kaiser, Ute

Implantation damage formation in a-, c- and m-plane GaN

ACTA MATERIALIA

IF9.3

2017-01-01

PREAI

Lorenz, K.; Wendler, E.; Redondo-Cubero, A.; Catarino, N.; Chauvat, M. -P.; Schwaiger, S.; Scholz, F.; Alves, E.; Ruterana, P.

Response of GaN to energetic ion irradiation: conditions for ion track formation

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-07-13

OAAI

Karlusic, M.; Kozubek, R.; Lebius, H.; Ban-d'Etat, B.; Wilhelm, R. A.; Buljan, M.; Siketic, Z.; Scholz, F.; Meisch, T.; Jaksic, M.; Bernstorff, S.; Schleberger, M.; Santic, B.

Bottom-up formation of robust gold carbide

SCIENTIFIC REPORTS

IF3.9

2015-03-16

OAAI

Westenfelder, Benedikt; Biskupek, Johannes; Meyer, Jannik C.; Kurasch, Simon; Lin, Xiaohang; Scholz, Ferdinand; Gross, Axel; Kaiser, Ute

Intentional anisotropic strain relaxation in (11(2)over-bar2) oriented Al1-xInxN one-dimensionally lattice matched to GaN

APPLIED PHYSICS LETTERS

IF3.6

2014-09-24

PREAI

Buss, E. R.; Rossow, U.; Bremers, H.; Meisch, T.; Caliebe, M.; Scholz, F.; Hangleiter, A.