Y. Cordier - Publications, H-index & Citations

Y. Cordier

crhea

32H指数

438论文数

4.4K被引数

收录论文 49

发表时间

Electrical properties of Schottky diodes on ammonothermal and hydride vapor phase epitaxy GaN substrates 肖特基二极管在氨热法和水热气相外延GaN衬底上的电学特性

Materials Science in Semiconductor Processing

IF4.6

2026-08-22

OAAI

G. Greco; S. Milazzo; P. Rocha; T.S. Tlemcani; P. Fiorenza; S.E. Panasci; F. Bartoli; E. Frayssinet; F. Giannazzo; D. Alquier; Y. Cordier; M. Bockowski; F. Roccaforte

Superior quality of n− GaN epilayer grown on ammonothermal substrate accessed by DLTS 在氨热衬底上生长的n型GaN外延层的高品质通过DLTS得到验证

Micro and Nanostructures

IF3

2026-06-13

OAAI

P.F.P.P. Rocha; K. Nadaud; G. Greco; T. Slimani Tlemcani; M. Bah; M. Bockowski; F. Bartoli; E. Frayssinet; Y. Cordier; F. Roccaforte; D. Alquier

Effects of Substrate Miscut on Growth Instabilities in Homoepitaxially Grown GaN/AlGaN System 衬底倾角对同质外延生长GaN/AlGaN体系中生长不稳定性的影响

Crystal Growth & Design

IF0

2026-02-25

PREAI

Henryk Teisseyre; Stéphane Vézian; Piotr Wojnar; Robert Kucharski; Tomasz Sochacki; Michał Boćkowski; Yvon Cordier; Maria Vladimirova; Benjamin Damilano

Surface oxidation and oxygen incorporation in ScAlN films grown by molecular beam epitaxy ScAlN薄膜的表面氧化及氧的固溶，采用分子束外延生长

Journal of Applied Physics

IF2.5

2025-12-28

PREAI

Gallardo-Modinger, Valentina; Georgi, Frederic; Wallart, Xavier; Florea, Ileana; Vennegues, Philippe; Cordier, Yvon; Hugues, Maxime

ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-12-01

OAAI

Elias, Caroline; Chenot, Sebastien; Bartoli, Florian; Hugues, Maxime; Cordier, Yvon

New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations 通过拉曼光谱、阴极发光和电学特性表征获得的垂直GaN-on-GaN肖特基二极管的新见解

Materials Science in Semiconductor Processing

IF4.6

2025-06-05

OAAI

Vishwajeet Maurya; Daniel Alquier; Maroun Dagher; Camille Sonneville; Dominique Planson; Hala El Rammouz; Thomas Kaltsounis; Eric Frayssinet; Yvon Cordier; Nevine Rochat; Matthew Charles; Julien Buckley

Self-limited monolayer graphene growth on SiC with propane-hydrogen CVD SiC上丙烷-氢气CVD自限制单层石墨烯生长

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2025-04-24

OAAI

Mastropasqua, Chiara; El Alouani, Ahmed; Paillet, Matthieu; Portail, Marc; Koudia, Mathieu; Abel, Mathieu; Cordier, Yvon; Jouault, Benoit; Berbezier, Isabelle; Juillaguet, Sandrine; Michon, Adrien

A Novel Isolation Approach for GaN-Based Power Integrated Devices

MICROMACHINES

IF3

2024-09-30

OAAI

Zaidan, Zahraa; Al Taradeh, Nedal; Benjelloun, Mohammed; Rodriguez, Christophe; Soltani, Ali; Tasselli, Josiane; Isoird, Karine; Phung, Luong Viet; Sonneville, Camille; Planson, Dominique; Cordier, Yvon; Morancho, Frederic; Maher, Hassan

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN [vol 11, 031105, 2023)

APL MATERIALS

IF4.5

2024-03-15

OAAI

Elias, Caroline; Nemoz, Maud; Rotella, Helene; Georgi, Frederic; Vezian, Stephane; Hugues, Maxime; Cordier, Yvon

Highlighting the role of 3C-SiC in the performance optimization of (Al,Ga) N-based High-Electron mobility transistors

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-03-01

OAAI

Bah, Micka; Alquier, Daniel; Lesecq, Marie; Defrance, Nicolas; Valente, Damien; Ngo, Thi Huong; Frayssinet, Eric; Portail, Marc; De Jaeger, Jean-Claude; Cordier, Yvon

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 通过脉冲激光沉积在蓝宝石和GaN衬底上生长的大面积MoS2薄膜

NANOMATERIALS

IF4.3

2023-10-26

OAAI

Spankova, Marianna; Chromik, Stefan; Dobrocka, Edmund; Slusna, Lenka Pribusova; Talacko, Marcel; Gregor, Maros; Pecz, Bela; Koos, Antal; Greco, Giuseppe; Panasci, Salvatore Ethan; Fiorenza, Patrick; Roccaforte, Fabrizio; Cordier, Yvon; Frayssinet, Eric; Giannazzo, Filippo

Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

APPLIED PHYSICS LETTERS

IF3.6

2023-10-18

PREAI

Ndiaye, Samba; Elias, Caroline; Diagne, Aissatou; Rotella, Helene; Georgi, Frederic; Hugues, Maxime; Cordier, Yvon; Vurpillot, Francois; Rigutti, Lorenzo

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

PHYSICAL REVIEW B

IF3.7

2023-09-15

OAAI

Aristegui, R.; Lefebvre, P.; Brimont, C.; Guillet, T.; Vladimirova, M.; Paradisanos, I.; Robert, C.; Marie, X.; Urbaszek, B.; Chenot, S.; Cordier, Y.; Damilano, B.

Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

APPLIED SURFACE SCIENCE

IF6.9

2023-09-01

OAAI

Giannazzo, F.; Panasci, S. E.; Schiliro, E.; Greco, G.; Roccaforte, F.; Sfuncia, G.; Nicotra, G.; Cannas, M.; Agnello, S.; Frayssinet, E.; Cordier, Y.; Michon, A.; Koos, A.; Pecz, B.

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

APL MATERIALS

IF4.5

2023-03-14

OAAI

Elias, Caroline; Nemoz, Maud; Rotella, Helene; Georgi, Frederic; Vezian, Stephane; Hugues, Maxime; Cordier, Yvon

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

PHYSICAL REVIEW B

IF3.7

2022-07-28

OAAI

Aristegui, R.; Chiaruttini, F.; Jouault, B.; Lefebvre, P.; Brimont, C.; Guillet, T.; Vladimirova, M.; Chenot, S.; Cordier, Y.; Damilano, B.

A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells (vol 120, 171103, 2022)

APPLIED PHYSICS LETTERS

IF3.6

2022-05-13

OAAI

Quach, P.; Jollivet, A.; Babichev, A.; Isac, N.; Morassi, M.; Lemaitre, A.; Yunin, P. A.; Frayssinet, E.; de Mierry, P.; Jeannin, M.; Bousseksou, A.; Colombelli, R.; Tchernycheva, M.; Cordier, Y.; Julien, F. H.

A 5.7-THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2022-04-25

OAAI

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

SENSORS

IF3.5

2022-02-15

OAAI

Paz-Martinez, Gaudencio; Iniguez-de-la-Torre, Ignacio; Sanchez-Martin, Hector; Antonio Novoa-Lopez, Jose; Hoel, Virginie; Cordier, Yvon; Mateos, Javier; Gonzalez, Tomas

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

SCIENTIFIC REPORTS

IF3.9

2020-08-25

OAAI

Bah, Micka; Valente, Damien; Lesecq, Marie; Defrance, Nicolas; Garcia Barros, Maxime; De Jaeger, Jean-Claude; Frayssinet, Eric; Comyn, Remi; Thi Huong Ngo; Alquier, Daniel; Cordier, Yvon

研究方向