J. Mateos - Publications, H-index & Citations

J. Mateos

universidad de salamanca

30H指数

354论文数

3.6K被引数

收录论文 39

发表时间

Exploring surface effects in GaN based nano-diodes: a physical interpretation through Monte Carlo simulations 探索GaN基纳米二极管的表面效应：基于蒙特卡罗模拟的物理诠释

Journal of Physics D: Applied Physics

IF3.2

2026-01-02

OAAI

H Sánchez-Martín; E Pérez-Martín; J C Pedro; J Mateos; T González; I Íñiguez-de-la-Torre

Physical analysis of barrier-inhomogeneity effects on the electrical parameters of GaN Schottky barrier diodes GaN肖特基势垒二极管电学参数中势垒不均匀性效应的物理分析

Journal of Physics D: Applied Physics

IF3.2

2025-12-24

OAAI

R A Peña; B Orfao; G Paz-Martínez; H Sánchez-Martín; J Mateos; T González; B G Vasallo; S Pérez

Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs 钝化、掺杂和几何参数对GaN肖特基势垒二极管雪崩击穿的影响

JOURNAL OF COMPUTATIONAL ELECTRONICS

IF2.5

2025-09-27

OAAI

Orfao, B.; Pena, R. A.; Vasallo, B. G.; Perez, S.; Mateos, J.; Gonzalez, T.

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight 基于微观物理洞察的GaN高电子迁移率晶体管电热建模：一种蒙特卡洛训练的混合AI-热学方法

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-09-07

OAAI

Garcia-Sanchez, S.; Iniguez-de-la-Torre, I.; Mateos, J.; Gonzalez, T.

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-10-14

PREAI

Garcia-Sanchez, S.; Perez, S.; Iniguez-de-la-Torre, I.; Garcia-Vasallo, B.; Huo, L.; Lingaparthi, R.; Nethaji, D.; Radhakrishnan, K.; Abou Daher, M.; Lesecq, M.; Gonzalez, T.; Mateos, J.

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

APPLIED PHYSICS LETTERS

IF3.6

2023-09-18

PREAI

Iniguez-de-la-Torre, I.; Perez-Martin, E.; Artillan, P.; Rochefeuille, E.; Sanchez-Martin, H.; Paz-Martinez, G.; Gonzalez, T.; Mateos, J.

Low temperature memory effects in AlGaN/GaN nanochannels

APPLIED PHYSICS LETTERS

IF3.6

2023-09-07

PREAI

Sanchez-Martin, H.; Perez-Martin, E.; Paz-Martinez, G.; Mateos, J.; Gonzalez, T.; Iniguez-de-la-Torre, I.

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

SENSORS

IF3.5

2022-02-15

OAAI

Paz-Martinez, Gaudencio; Iniguez-de-la-Torre, Ignacio; Sanchez-Martin, Hector; Antonio Novoa-Lopez, Jose; Hoel, Virginie; Cordier, Yvon; Mateos, Javier; Gonzalez, Tomas

Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY

IF4

2021-09-01

OAAI

Paz-Martinez, Gaudencio; Gerardo Trevino-Palacios, Carlos; Molina-Reyes, Joel; Romero-Moran, Alejandra; Cervantes-Garcia, Eric; Mateos, Javier; Gonzalez, Tomas

Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices

SCIENTIFIC REPORTS

IF3.9

2020-10-02

OAAI

Colomes, Enrique; Mateos, Javier; Gonzalez, Tomas; Oriols, Xavier

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

APPLIED PHYSICS LETTERS

IF3.6

2018-07-25

OAAI

Sanchez-Martin, H.; Mateos, J.; Novoa, J. A.; Delgado-Notario, J. A.; Meziani, Y. M.; Perez, S.; Theveneau, H.; Ducournau, G.; Gaquiere, C.; Gonzalez, T.; Iniguez-de-la-Torre, I.

Design and Analysis of High Performance Ballistic Nanodevice-Based Sequential Circuits Using Monte Carlo and Verilog AMS Simulations

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2016-12-01

PREAI

Marthi, Poorna; Hossain, Nazir; Wang, Huan; Millithaler, Jean-Francois; Margala, Martin; Iniguez-de-la-Torre, Ignacio; Mateos, Javier; Gonzalez, Tomas

A 520-620-GHz Schottky Receiver Front-End for Planetary Science and Remote Sensing With 1070 K-1500 K DSB Noise Temperature at Room Temperature

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY

IF4

2016-01-01

PREAI

Treuttel, J.; Gatilova, L.; Maestrini, A.; Moro-Melgar, D.; Yang, F.; Tamazouzt, F.; Vacelet, T.; Jin, Y.; Cavanna, A.; Mateos, J.; Feret, A.; Chaumont, C.; Goldstein, C.

On the effect of δ-doping in self-switching diodes (vol 105, 093505, 2014)

APPLIED PHYSICS LETTERS

IF3.6

2015-05-12

OAAI

Westlund, A.; Iniguez-de-la-Torre, I.; Nilsson, P. -A.; Gonzalez, T.; Mateos, J.; Sangare, P.; Ducournau, G.; Gaquiere, C.; Desplanque, L.; Wallart, X.; Grahn, J.

Phonon black-body radiation limit for heat dissipation in electronics

NATURE MATERIALS

IF38.5

2014-11-10

PREAI

Schleeh, J.; Mateos, J.; Iniguez-de-la-Torre, I.; Wadefalk, N.; Nilsson, P. A.; Grahn, J.; Minnich, A. J.

Operation of GaN Planar Nanodiodes as THz Detectors and Mixers

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY

IF4

2014-11-01

OAAI

Iniguez-de-la-Torre, Ignacio; Daher, Carlos; Millithaler, Jean-Francois; Torres, Jeremi; Nouvel, Philippe; Varani, Luca; Sangare, Paul; Ducournau, Guillaume; Gaquiere, Christophe; Gonzalez, Tomas; Mateos, Javier

Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

APPLIED PHYSICS LETTERS

IF3.6

2014-09-15

OAAI

Garcia-Perez, O.; Alimi, Y.; Song, A.; Iniguez-de-la-Torre, I.; Perez, S.; Mateos, J.; Gonzalez, T.

On the effect of δ-doping in self-switching diodes

APPLIED PHYSICS LETTERS

IF3.6

2014-09-04

OAAI

Westlund, A.; Iniguez-de-la-Torre, I.; Nilsson, P. -A.; Gonzalez, T.; Mateos, J.; Sangare, P.; Ducournau, G.; Gaquiere, C.; Desplanque, L.; Wallart, X.; Grahn, J.

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

APPLIED PHYSICS LETTERS

IF3.6

2014-02-20

OAAI

Millithaler, J. -F.; Iniguez-de-la-Torre, I.; Iniguez-de-la-Torre, A.; Gonzalez, T.; Sangare, P.; Ducournau, G.; Gaquiere, C.; Mateos, J.

Plasma Enhanced Terahertz Rectification and Noise in InGaAs HEMTs

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY

IF4

2012-09-01

OAAI

Mateos, Javier; Gonzalez, Toms

研究方向