Sarit Dhar - Publications, H-index & Citations

Sarit Dhar

Sandia National Laboratories

36H指数

164论文数

4.0K被引数

收录论文 21

发表时间

The completed High-Low method for interface state analysis in MOS capacitors MOS电容器中界面态分析的完整高低法

Journal of Applied Physics

IF2.5

2026-05-14

OAAI

Rummel, B. D.; Dhar, S.; Kaplar, R. J.

High conductivity β-Ga2O3 formed by hot Si ion implantation

APPLIED PHYSICS LETTERS

IF3.6

2022-12-27

OAAI

Sardar, Arka; Isaacs-Smith, Tamara; Lawson, Jacob; Asel, Thaddeus; Comes, Ryan B.; Merrett, Joseph N.; Dhar, Sarit

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

MATERIALS

IF3.2

2022-09-28

OAAI

Das, Suman; Zheng, Yongju; Ahyi, Ayayi; Kuroda, Marcelo A.; Dhar, Sarit

Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

APPLIED PHYSICS LETTERS

IF3.6

2018-11-07

PREAI

Taillon, Joshua A.; Klingshirn, Christopher J.; Jiao, Chunkun; Zheng, Yongju; Dhar, Sarit; Zheleva, Tsvetanka S.; Lelis, Aivars J.; Salamanca-Riba, Lourdes G.

Interface trapping in ((2)over-bar01) β-Ga2O3 MOS capacitors with deposited dielectrics

APPLIED PHYSICS LETTERS

IF3.6

2018-05-11

PREAI

Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

APPLIED PHYSICS REVIEWS

IF11.6

2015-06-18

236

PREAI

Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

APPLIED PHYSICS LETTERS

IF3.6

2015-04-09

OAAI

Shen, Xiao; Dhar, Sarit; Pantelides, Sokrates T.

Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), (000(1)over-bar), and (11(2)over-bar0) surfaces

APPLIED PHYSICS LETTERS

IF3.6

2015-03-23

OAAI

Liu, Gang; Xu, Can; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit; Feldman, Leonard C.

Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

APPLIED SURFACE SCIENCE

IF6.9

2015-01-01

PREAI

Liu, Gang; Xu, Yi; Xu, Can; Basile, Alberto; Wang, Feng; Dhar, Sarit; Conrad, Edward; Mooney, Patricia; Gustafsson, Torgny; Feldman, Leonard C.

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

APPLIED PHYSICS LETTERS

IF3.6

2014-11-10

PREAI

Liu, Gang; Xu, Can; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit; Feldman, Leonard C.

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

APPLIED PHYSICS LETTERS

IF3.6

2014-11-06

PREAI

Lichtenwalner, Daniel J.; Cheng, Lin; Dhar, Sarit; Agarwal, Anant; Palmour, John W.

Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

APPLIED SURFACE SCIENCE

IF6.9

2014-10-01

PREAI

Chen, Zengjun; Xu, Yi; Garfunkel, Eric; Feldman, Leonard C.; Buyuklimanli, Temel; Ou, Wei; Serfass, Jeff; Wan, Alan; Dhar, Sarit

Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures

APPLIED PHYSICS LETTERS

IF3.6

2011-02-11

PREAI

Shen, Xiao; Zhang, En Xia; Zhang, Cher Xuan; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Dhar, Sarit; Ryu, Sei-Hyung; Pantelides, Sokrates T.

Interface passivation for silicon dioxide layers on silicon carbide

MRS BULLETIN

IF4.9

2011-01-31

PREAI

Dhar, S; Wang, SR; Williams, JR; Pantelides, ST; Feldman, LC

Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2009-10-29

115

PREAI

Dhar, Sarit; Seitz, Oliver; Halls, Mathew D.; Choi, Sungho; Chabal, Yves J.; Feldman, Leonard C.

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2009-10-16

PREAI

Lichtenwalner, Daniel J.; Misra, Veena; Dhar, Sarit; Ryu, Sei-Hyung; Agarwal, Anant

Ultrashallow defect states at SiO2/4H-SiC interfaces

APPLIED PHYSICS LETTERS

IF3.6

2008-03-13

PREAI

Dhar, S.; Chen, X. D.; Mooney, P. M.; Williams, J. R.; Feldman, L. C.

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2007-10-09

PREAI

Rozen, John; Dhar, Sarit; Pantelides, S. T.; Feldman, L. C.; Wang, Sanwu; Williams, J. R.; Afanas'ev, V. V.

Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy 表面增强拉曼光谱研究SiO2/4H-SiC界面的氮化

APPLIED SURFACE SCIENCE

IF6.9

2007-04-01

PREAI

Choi, S. H.; Wang, D.; Williams, J. R.; Park, M.; Lu, W.; Dhar, S.; Feldman, L. C.

Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2004-10-18

PREAI

Lu, WJ; Feldman, LC; Song, Y; Dhar, S; Collins, WE; Mitchel, WC; Williams, JR

研究方向