未登录Single-field-plate GaN HEMTs achieving >2400 V breakdown voltage and 106% dynamic on-resistance at 600 V stress (vol 65, 066501, 2026)单场板GaN HEMTs实现>2400 V击穿电压和106%动态导通电阻在600 V应力下(卷65,066501,2026)
Yang, Zhichao; Liao, Eason; Zhuang, Jungang; Dong, Hao; Zhang, Shuangshuang; Zhu, Lei; Yang, Zezheng; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun
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收藏GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure通过低温MBE生长,沟道细分和单场板结构实现的击穿电压超过2500 V的GaN高电子迁移率晶体管
Yang, Zhichao; Liao, Eason; Ding, Daniel; Zhuang, Jungang; Dong, Hao; Yang, Han; Zhu, Lei; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun
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收藏Enhancing hydrogen evolution by heterointerface engineering of Ni/ MoN catalysts通过Ni/MoN催化剂的异质界面工程增强氢气进化
Jiang, Junzheng; Qiu, Yunfan; Dong, Hao; Yang, Lei; Miao, Yaping; Xiong, Liwei; Gao, Biao; Zhang, Xuming; Chu, Paul K.; Peng, Xiang
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