arrow
返回
B

Byoung‐Gue Min

electronics & telecommunications research institute - korea (etri)

15H指数
81论文数
843被引数
收录论文 8
发表时间
Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study
err2026-01-25
err0
errOAAI
errYoung-Hyun Won; Tae-Sung Kim; Jae-Hun Lee; Chae-Yun Lim; Byoung-Gue Min; Dong-Min Kang; Hyun-Seok Kim
err分享
err收藏
err分享
err收藏
err分享
err收藏
Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study
err2023-05-23
err4
errOAAI
errChoi, Jun-Hyeok; Kang, Woo-Seok; Kim, Dohyung; Kim, Ji-Hun; Lee, Jun-Ho; Kim, Kyeong-Yong; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok
err分享
err收藏