Arnaud Bournel - Publications, H-index & Citations

Arnaud Bournel

Universite Paris Saclay

28H指数

152论文数

2.3K被引数

收录论文 20

发表时间

Magnon scattering modulated by omnidirectional hopfion motion in antiferromagnets for meta-learning

SCIENCE ADVANCES

IF12.5

2023-02-10

OAAI

Zhang, Zhizhong; Lin, Kelian; Zhang, Yue; Bournel, Arnaud; Xia, Ke; Klaeui, Mathias; Zhao, Weisheng

Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions

NANOSCALE

IF5.1

2021-01-01

PREAI

Yang, Wei; Cao, Yuan; Han, Jiangchao; Lin, Xiaoyang; Wang, Xinhe; Wei, Guodong; Lv, Chen; Bournel, Arnaud; Zhao, Weisheng

Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions 铱基磁隧道结中的大自旋霍尔效应和隧穿磁阻

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY

IF7.5

2019-08-22

PREAI

Zhou, JiaQi; Zhou, HangYu; Bournel, Arnaud; Zhao, WeiSheng

Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-04-15

OAAI

Zhou, Jiaqi; Qiao, Junfeng; Duan, Chun-Gang; Bournel, Arnaud; Wang, Kang L.; Zhao, Weisheng

Intrinsic spin Hall conductivity of the semimetals MoTe2 and WTe2

PHYSICAL REVIEW B

IF3.7

2019-02-26

OAAI

Zhou, Jiaqi; Qiao, Junfeng; Bournel, Arnaud; Zhao, Weisheng

Silicene spintronics:Fe(111)/silicene system for efficient spin injection

APPLIED PHYSICS LETTERS

IF3.6

2017-11-02

PREAI

Zhou, Jiaqi; Bournel, Arnaud; Wang, Yin; Lin, Xiaoyang; Zhang, Yue; Zhao, Weisheng

Gate-Driven Pure Spin Current in Graphene

PHYSICAL REVIEW APPLIED

IF4.4

2017-09-11

OAAI

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

APPLIED PHYSICS LETTERS

IF3.6

2016-12-15

OAAI

Zhou, Jiaqi; Zhao, Weisheng; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Liu, Lei; Zhang, Youguang; Bournel, Arnaud

Current-limiting challenges for all-spin logic devices

SCIENTIFIC REPORTS

IF3.9

2015-10-09

OAAI

Su, Li; Zhang, Youguang; Klein, Jacques-Olivier; Zhang, Yue; Bournel, Arnaud; Fert, Albert; Zhao, Weisheng

Stark shift of the absorption spectra in Ge/Ge1-xSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2015-09-01

OAAI

Yahyaoui, N.; Sfina, N.; Lazzari, J-L.; Bournel, A.; Said, M.

Proposal for a graphene-based all-spin logic gate

APPLIED PHYSICS LETTERS

IF3.6

2015-02-19

PREAI

Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Zhang, Youguang; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud

On the non-linear effects in graphene devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-02-12

PREAI

Viet Hung Nguyen; Alarcon, Alfonso; Berrada, Salim; Van Nam Do; St-Martin, Jerome; Querlioz, Damien; Bournel, Arnaud; Dollfus, Philippe

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

IF3.6

2013-10-31

OAAI

Berrada, Salim; Viet Hung Nguyen; Querlioz, Damien; St-Martin, Jerome; Alarcon, Alfonso; Chassat, Christophe; Bournel, Arnaud; Dollfus, Philippe

Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

APPLIED PHYSICS LETTERS

IF3.6

2011-07-27

PREAI

Nguyen, V. Hung; Mazzamuto, F.; Saint-Martin, J.; Bournel, A.; Dollfus, P.

Resonant tunneling and negative transconductance in single barrier bilayer graphene structure

APPLIED PHYSICS LETTERS

IF3.6

2009-12-11

PREAI

Nguyen, V. Hung; Bournel, A.; Nguyen, V. Lien; Dollfus, P.

Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices

PHYSICAL REVIEW B

IF3.7

2008-10-06

PREAI

Querlioz, Damien; Saint-Martin, Jerome; Bournel, Arnaud; Dollfus, Philippe

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

APPLIED PHYSICS LETTERS

IF3.6

2008-01-29

110

PREAI

Querlioz, D.; Apertet, Y.; Valentin, A.; Huet, K.; Bournel, A.; Galdin-Retailleau, S.; Dollfus, P.

First-order intervalley scattering in low-dimensional systems (vol B 65, art no 212304, 2002)

PHYSICAL REVIEW B

IF3.7

2003-02-27

OAAI

Monsef, F; Dollfus, P; Galdin, S; Bournel, A

First-order intervalley scattering in low-dimensional systems

PHYSICAL REVIEW B

IF3.7

2002-06-11

PREAI

Monsef, F; Dollfus, P; Galdin, S; Bournel, A

Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2000-10-09

PREAI

Bournel, A; Dollfus, P; Cassan, E; Hesto, P

研究方向