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D

Dinh Loc Duong⧫

sungkyunkwan university

H指数:36

被引数:5,591

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High-Performance Conductive Bridging Memristor via van der Waals Interface Engineering for Neuromorphic Computing

通过范德华界面工程实现的高性能导电桥忆阻器用于神经形态计算

IF12.1

2026-09-260

PRE

Contemporary Challenges in van der Waals 2D Semiconductors

范德华二维半导体的当代挑战

IF16

2026-01-190

PRE

Fluorine-Free, Auger-Resistive, and UV-Emitting MXene Quantum Dots

无氟，耐俄歇和发射紫外线的MXene量子点

ADVANCED OPTICAL MATERIALS

IF7.2

2024-12-290

PRE

Observation of Linear Resistance at Low Temperatures in Hole-Doped Degenerate Spin-Valley Semiconductors

IF9.1

2024-11-200

PRE

Signature of possible spin liquid state at 2K in spin-frustrated Cr 1-x Fe x PSe 3 alloy

自旋受挫Cr 1-x Fe x PSe 3合金中2k时可能的自旋液态特征

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-06-010

PRE

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature

ADVANCED SCIENCE

IF14.1

2023-12-108

OA

Investigation of exciton states of ReS2 by temperature- and polarization-dependent photoluminescence and oxygen plasma treatment

APPLIED SURFACE SCIENCE

IF6.9

2023-11-013

OAAI

Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal-Organic Chemical Vapor Deposition-Grown GeSe2

ADVANCED OPTICAL MATERIALS

IF7.2

2023-08-174

OA

Electrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide

多层钒掺杂的二硒化钨中的电可调谐磁波动

NATURE ELECTRONICS

IF40.9

2023-08-106

PRE

Incommensurate Antiferromagnetic Order in Weakly Frustrated Two-Dimensional van der Waals Insulator CrPSe3

弱受挫二维范德华绝缘子CrPSe3中的反铁磁阶数不相称

INORGANIC CHEMISTRY

IF4.7

2023-08-028

OA

High Pressure-Driven Magnetic Disorder and Structural Transformation in Fe3GeTe2: Emergence of a Magnetic Quantum Critical Point

Fe3GeTe2中高压驱动的磁无序和结构转变: 磁量子临界点的出现

ADVANCED SCIENCE

IF14.1

2023-01-2512

OAAI

CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area

NATURE COMMUNICATIONS

IF15.7

2022-08-125

OAAI

Defect-Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers

ADVANCED OPTICAL MATERIALS

IF7.2

2022-06-157

OAAI

Escalating Ferromagnetic Order via Se-Vacancies Near Vanadium in WSe2 Monolayers

ADVANCED MATERIALS

IF26.8

2022-01-2929

PRE

Light-emitting Ti2N (MXene) quantum dots: synthesis, characterization and theoretical calculations

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-0122

PRE

Spin-Selective Hole-Exciton Coupling in a V-Doped WSe2 Ferromagnetic Semiconductor at Room Temperature

室温下V掺杂WSe2铁磁半导体中的自旋选择性空穴激子耦合

IF16

2021-11-2222

PRE

Gate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe2

通过WSe2中的共振Se空位水平实现栅极可调磁性

ADVANCED SCIENCE

IF14.1

2021-10-287

OAAI

Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

IF16

2021-07-2323

PREAI

Evidence of itinerant holes for long-range magnetic order in the tungsten diselenide semiconductor with vanadium dopants

PHYSICAL REVIEW B

IF3.7

2021-03-2221

OAAI

Probing giant Zeeman shift vanadium-doped WSe2 via resonant magnetotunneling transport

PHYSICAL REVIEW B

IF3.7

2021-01-2615

PREAI