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Z

Zhigang Jia

chinese academy of sciences

H指数:15

被引数:830

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Hybrid RGO–CNTs engineering for improved electrocatalytic activity and durability of RuO2–IrO2–SnO2/Ti electrodes

RGO–CNTs杂化工程以提升RuO2–IrO2–SnO2/Ti电极的电催化活性和耐久性

Applied Surface Science

IF6.9

2026-08-070

PRE

Reduction of thermal generation for the dual-junction cascade 940 nm VCSEL by adopting tunnel junction

通过采用隧穿结，减少双结级联940 nm VCSEL的热生成

JOURNAL OF OPTICS

IF2.7

2025-10-010

PRE

Study on the electrochemical behavior and fluoride film formation of high-purity 70/30 copper–zinc alloy in NaF solution

高纯70/30铜–锌合金在NaF溶液中的电化学行为及氟化物膜形成研究

Electrochimica Acta

IF5.6

2025-08-200

PRE

Self-correcting linear chirplet transform for the separation of signals with crossover frequencies

自校正线性啁啾脉冲变换用于分离交叉频率信号

IF5.6

2025-05-050

PRE

Effect of microstructural inheritance window on the mechanical properties of an intercritically annealed Q&P steel

显微组织继承窗口对临界退火Q & P钢力学性能的影响

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T

IF6.6

2024-09-010

OAAI

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-08-014

PREAI

Structural design and optimization for vent holes of an industrial turbine sealing disk

CHINESE JOURNAL OF AERONAUTICS

IF5.7

2021-05-018

OAAI

Small-size graphene oxide (GO) as a hole injection layer for high-performance green phosphorescent organic light-emitting diodes

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-0111

PRE

Evolution mechanism of InGaN quantum dots and their optical properties

InGaN量子点的演化机制及其光学性质

OPTICAL MATERIALS

IF4.2

2020-01-019

PREAI

Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-05-011

PREAI

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

NANOSCALE RESEARCH LETTERS

IF4.1

2018-04-2721

OAAI

Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-02-016

PREAI

Enhancement of carrier localization effect and internal quantum efficiency through In-rich InGaN quantum dots

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-01-0119

PREAI

Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-11-014

PREAI

Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-11-0114

PREAI

Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-07-017

PREAI

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

NANOSCALE RESEARCH LETTERS

IF4.1

2017-05-1618

OAAI

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

NANOSCALE RESEARCH LETTERS

IF4.1

2017-05-0222

OAAI

Effects of boron incorporation on the strain and photoluminescence properties of GaAsSb/GaAs quantum wells

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2013-12-013

PREAI

Dependence of doubly curved regions on drying method in the fabrication of long-side rolled-up III-V microtubes

APPLIED PHYSICS LETTERS

IF3.6

2013-08-0112

PREAI