Conal E. Murray - Publications, H-index & Citations

Conal E. Murray

ibm

25H指数

170论文数

3.6K被引数

收录论文 39

发表时间

Robust quality factor assessment of high-coherence superconducting qubits 高相干超导量子比特鲁棒品质因子的评估

npj Quantum Information

IF8.3

2026-02-28

OAAI

Andrew Dane; Karthik Balakrishnan; Brent Wacaser; Li-Wen Hung; H. J. Mamin; Daniel Rugar; Robert M. Shelby; Conal Murray; Kenneth Rodbell; Jeffrey Sleight

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

NPJ QUANTUM INFORMATION

IF8.3

2022-03-21

OAAI

Kurter, C.; Murray, C. E.; Gordon, R. T.; Wymore, B. B.; Sandberg, M.; Shelby, R. M.; Eddins, A.; Adiga, V. P.; Finck, A. D. K.; Rivera, E.; Stabile, A. A.; Trimm, B.; Wacaser, B.; Balakrishnan, K.; Pyzyna, A.; Sleight, J.; Steffen, M.; Rodbell, K.

Environmental radiation impact on lifetimes and quasiparticle tunneling rates of fixed-frequency transmon qubits 环境辐射对固定频率传输量子位的寿命和准粒子隧穿率的影响

APPLIED PHYSICS LETTERS

IF3.6

2022-02-16

PREAI

Gordon, R. T.; Murray, C. E.; Kurter, C.; Sandberg, M.; Hall, S. A.; Balakrishnan, K.; Shelby, R.; Wacaser, B.; Stabile, A. A.; Sleight, J. W.; Brink, M.; Rothwell, M. B.; Rodbell, K. P.; Dial, O.; Steffen, M.

Material matters in superconducting qubits

MATERIALS SCIENCE & ENGINEERING R-REPORTS

IF26.8

2021-10-01

OAAI

Murray, Conal E.

Investigating microwave loss of SiGe using superconducting transmon qubits

APPLIED PHYSICS LETTERS

IF3.6

2021-03-22

OAAI

Sandberg, Martin; Adiga, Vivekananda P.; Brink, Markus; Kurter, Cihan; Murray, Conal; Hopstaken, Marinus; Bruley, John; Orcutt, Jason S.; Paik, Hanhee

Tailoring capping layers to reduce stress gradients in copper metallization

APPLIED PHYSICS LETTERS

IF3.6

2016-12-07

PREAI

Murray, Conal E.; Priyadarshini, Deepika; Nguyen, Son; Ryan, E. Todd

High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography 通过单角度布拉格ptychography实现高分辨率三维结构显微镜

NATURE MATERIALS

IF38.5

2016-11-21

PREAI

Hruszkewycz, S. O.; Allain, M.; Holt, M. V.; Murray, C. E.; Holt, J. R.; Fuoss, P. H.; Chamard, V.

Predicting substrate resonance mode frequency shifts using conductive, through-substrate vias

APPLIED PHYSICS LETTERS

IF3.6

2016-02-22

PREAI

Murray, Conal E.; Abraham, D. W.

Efficient modeling of Bragg coherent x-ray nanobeam diffraction

OPTICS LETTERS

IF3.3

2015-07-02

OAAI

Hruszkewycz, S. O.; Holt, M. V.; Allain, M.; Chamard, V.; Polvino, S. M.; Murray, C. E.; Fuoss, P. H.

Linking strain anisotropy and plasticity in copper metallization

APPLIED PHYSICS LETTERS

IF3.6

2015-05-05

OAAI

Murray, Conal E.; Jordan-Sweet, Jean; Priyadarshini, Deepika; Son Nguyen

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

APPLIED PHYSICS LETTERS

IF3.6

2015-01-28

PREAI

Wang, Y. Y.; Cooper, D.; Rouviere, J.; Murray, C. E.; Bernier, N.; Bruley, J.

Coherent Bragg nanodiffraction at the hard X-ray Nanoprobe beamline 硬x射线纳米探针光束线的相干布拉格纳米衍射

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

IF3.7

2014-03-06

OAAI

Hruszkewycz, S. O.; Holt, M. V.; Maser, J.; Murray, C. E.; Highland, M. J.; Folkman, C. M.; Fuoss, P. H.

Origin of stress gradients induced in capped, copper metallization

APPLIED PHYSICS LETTERS

IF3.6

2014-02-28

PREAI

Murray, Conal E.

A Next-Generation In-Situ Nanoprobe Beamline for the Advanced Photon Source 用于高级光子源的下一代原位纳米探针光束线

x ray nanoimaging: instruments and methods ii

IF0

2013-09-26

OAAI

Maser, Joerg; Lai, Barry; Buonassisi, Tonio; Cai, Zhonghou; Chen, Si; Finney, Lydia; Gleber, Sophie-Charlotte; Harder, Ross; Jacobsen, Chris; Liu, Wenjun; Murray, Conal; Preissner, Curt; Roehrig, Chris; Rose, Volker; Shu, Deming; Vine, David; Vogt, Stefan

Strain mapping of Si devices with stress memorization processing

APPLIED PHYSICS LETTERS

IF3.6

2013-07-30

PREAI

Wang, Y. Y.; Bruley, J.; van Meer, H.; Li, J.; Domenicucci, A.; Murray, C. E.; Rouviere, J.

Submicron mapping of strain distributions induced by three-dimensional through-silicon via features

APPLIED PHYSICS LETTERS

IF3.6

2013-06-28

PREAI

Murray, Conal E.; Graves-Abe, T.; Robison, R.; Cai, Z.