Martin Hÿtch - Publications, H-index & Citations

Martin Hÿtch

universite de toulouse and cnrs

38H指数

254论文数

9.2K被引数

收录论文 35

发表时间

Leakage-Induced Space-Charge Accumulation and Interfacial Field Redistribution in a Dielectric Nanocapacitor Revealed by Operando Electron Holography 泄漏诱导的空间电荷积累及介电纳米电容器中的界面电场重分布由原位电子全息术揭示

Nano Letters

IF9.1

2026-04-13

PREAI

Bérangère Disic; Kilian Gruel; Aurélien Masseboeuf; Leifeng Zhang; Raphaël Serra; Martin Hÿtch; Christophe Gatel

Mapping electric fields and observation of ferroelectric domain switching in hafnia-zirconia devices by electron holography 通过电子全息术对氧化铪-氧化锆器件中电场的映射及铁电畴翻转的观测

Nature Communications

IF15.7

2025-12-18

OAAI

Leifeng Zhang; Christophe Gatel; Muhammad Hamid Raza; Kilian Gruel; Catherine Dubourdieu; Martin Hÿtch

Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography

ADVANCED MATERIALS

IF26.8

2024-11-25

PREAI

Zhang, Leifeng; Raza, Muhammad Hamid; Wu, Rong; Gruel, Kilian; Dubourdieu, Catherine; Hytch, Martin; Gatel, Christophe

Operando electrical biasing TEM experiments of Ge-rich GST thin films with FIB sample preparation 用FIB样品制备富Ge GST薄膜的操作电偏置TEM实验

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-10-01

PREAI

Zhang, Leifeng; Park, Bumsu; Chapuis, Lucas; Gruel, Kilian; Cours, Robin; Lorut, Frederic; Hytch, Martin; Gatel, Christophe

Measuring Electrical Resistivity at the Nanoscale in Phase-Change Materials

NANO LETTERS

IF9.1

2024-05-06

PREAI

Zhang, Leifeng; Lorut, Frederic; Gruel, Kilian; Hytch, Martin J.; Gatel, Christophe

Mapping electric fields in real nanodevices by operando electron holography 通过操作电子全息术在真实纳米器件中映射电场

APPLIED PHYSICS LETTERS

IF3.6

2022-06-06

OAAI

Brodovoi, Maria; Gruel, Kilian; Masseboeuf, Aurelien; Chapuis, Lucas; Hytch, Martin; Lorut, Frederic; Gatel, Christophe

One-Pot Seed-Mediated Growth of Co Nanoparticles by the Polyol Process: Unraveling the Heterogeneous Nucleation 通过多元醇过程一锅种子介导的Co纳米颗粒生长: 解开异质成核

NANO LETTERS

IF9.1

2019-11-22

OAAI

Ramamoorthy, Raj Kumar; Viola, Arnaud; Grindi, Bilel; Peron, Jennifer; Gatel, Christophe; Hytch, Martin; Arenal, Raul; Sicard, Lorette; Giraud, Marion; Piquemal, Jean-Yves; Viau, Guillaume

Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique 通过Ge凝聚技术获得的绝缘体上SiGe的应变演化

APL MATERIALS

IF4.5

2019-04-30

OAAI

Boureau, Victor; Reboh, Shay; Benoit, Daniel; Hytch, Martin; Claverie, Alain

Unlimited acquisition time in electron holography by automated feedback control of transmission electron microscope

APPLIED PHYSICS LETTERS

IF3.6

2018-09-26

PREAI

Gatel, C.; Dupuy, J.; Houdellier, F.; Hytch, M. J.

Electron microscopy by specimen design: application to strain measurements 样品设计的电子显微镜: 应用于应变测量

SCIENTIFIC REPORTS

IF3.9

2017-09-29

OAAI

Cherkashin, Nikolay; Denneulin, Thibaud; Hytch, Martin J.

Four-wave dark-field electron holography for imaging strain fields

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-05-18

PREAI

Denneulin, T.; Hytch, M.

Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation 通过Ge冷凝处理的绝缘体上的薄SiGe层中的应变/成分相互作用

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-02-01

PREAI

Boureau, Victor; Benoit, Daniel; Warot, Benedicte; Hytch, Martin; Claverie, Alain

Low-noise cold-field emission current obtained between two opposed carbon cone nanotips during in situ transmission electron microscope biasing

APPLIED PHYSICS LETTERS

IF3.6

2015-06-29

OAAI

de Knoop, L.; Gatel, C.; Houdellier, F.; Monthioux, M.; Masseboeuf, A.; Snoeck, E.; Hytch, M. J.

Investigation of the Phase Occurrence, H Sorption Properties, and Electrochemical Behavior in the Composition Ranges La0.75-0.80Mg0.30-0.38Ni3.67 在La0.75-0.80 mg0.30-0.38ni3.67组成范围内的相发生，H吸附性能和电化学行为的研究

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2014-11-20

PREAI

Zhang, Junxian; Latroche, Michel; Magen, Cesar; Serin, Virginie; Hytch, Martin J.; Knosp, Bernard; Bernard, Patrick

Observing and measuring strain in nanostructures and devices with transmission electron microscopy 用透射电子显微镜观察和测量纳米结构和器件中的应变

MRS BULLETIN

IF4.9

2014-02-12

PREAI

Hytch, Martin J.; Minor, Andrew M.

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

APL MATERIALS

IF4.5

2013-10-28

OAAI

Reboh, S.; Morin, P.; Hytch, M. J.; Houdellier, F.; Claverie, A.

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

APPLIED PHYSICS LETTERS

IF3.6

2013-05-03

OAAI

Cherkashin, N.; Reboh, S.; Hytch, M. J.; Claverie, A.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.; Chaldyshev, V. V.

A method to determine the Young's modulus of thin-film elements assisted by dark-field electron holography

APPLIED PHYSICS LETTERS

IF3.6

2013-02-06

PREAI

Reboh, S.; Benzo, P.; Morin, P.; Cours, R.; Hytch, M. J.; Claverie, A.

Identification of the atomic scale structure of the La0.65Nd0.15Mg0.20Ni3.5 synthesized by spark plasma sintering alloy 通过火花等离子体烧结合金合成的La0.65Nd0.15Mg0.20Ni3.5的原子尺度结构的鉴定

INTERMETALLICS

IF4.8

2013-01-01

PREAI

Serin, Virginie; Zhang, Junxian; Magen, Cesar; Serra, Raphael; Hytch, Martin J.; Lemort, Lucille; Latroche, Michel; Ricardo Ibarra, Manuel; Knosp, Bernard; Bernard, Patrick

Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy

APPLIED SURFACE SCIENCE

IF6.9

2012-09-01

PREAI

Vincent, L.; Fossard, F.; Kociniewski, T.; Largeau, L.; Cherkashin, N.; Hytch, M. J.; Debarre, D.; Sauvage, T.; Claverie, A.; Boulmer, J.; Bouchier, D.

研究方向