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Nae-Man Park

electronics & telecommunications research institute - korea (etri)

H指数:23

被引数:2,129

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Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution

Nature Communications

IF15.7

2020-01-31124

OAAI

Facile extraction of cellulose nanocrystals

纤维素纳米晶体的简易提取

CARBOHYDRATE POLYMERS

IF12.5

2019-11-0165

PREAI

Snow-Ice-Inspired Approach for Growth of Amorphous Silicon Nanotips

IF4.3

2019-05-020

OAAI

Self-Powered Motion-Driven Triboelectric Electroluminescence Textile System

自供电运动驱动摩擦电电致发光纺织系统

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-01-0491

PREAI

Porous cellulose paper as a light out coupling medium for organic light-emitting diodes

JOURNAL OF INFORMATION DISPLAY

IF3.4

2018-10-019

OAAI

Color tunable nanopaper solar cells using hybrid CH3NH3PbI3-xBrx perovskite

IF6.6

2016-12-0133

PREAI

Photolithography-Based Patterning of Liquid Metal Interconnects for Monolithically Integrated Stretchable Circuits

用于单片集成可拉伸电路的液态金属互连的基于光刻的图案化

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-06-09121

PREAI

Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2016-01-0127

PREAI

Low temperature fabrication of indium-tin oxide film by using ionized physical vapor deposition method

SURFACE & COATINGS TECHNOLOGY

IF6.1

2015-03-018

PREAI

Growth of silicon nanowires in aqueous solution under atmospheric pressure (vol 7, pg 898, 2014)

IF9

2014-08-240

OAAI

Growth of silicon nanowires in aqueous solution under atmospheric pressure

IF9

2014-06-0314

PREAI

Effect of Se flux on CuIn1-xGaxSe2 film in reactive sputtering process (vol 20, pg 899, 2012)

PROGRESS IN PHOTOVOLTAICS

IF7.6

2012-12-221

OAAI

In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

NANOSCALE RESEARCH LETTERS

IF4.1

2012-11-2113

OAAI

Effect of Se flux on CuIn1-xGaxSe2 film in reactive sputtering process

PROGRESS IN PHOTOVOLTAICS

IF7.6

2011-10-2524

PREAI

Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2008-07-245

PREAI

Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

APPLIED PHYSICS LETTERS

IF3.6

2007-01-1798

PREAI

Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern

APPLIED PHYSICS LETTERS

IF3.6

2006-11-0933

PREAI

Physics and device structures of highly efficient silicon quantum dots based silicon nitride light-emitting diodes

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2006-11-0150

PREAI

High negative differential resistance in silicon quantum dot metal-insulator-semiconductor structure

APPLIED PHYSICS LETTERS

IF3.6

2006-10-1212

PREAI

High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer (vol 86, pg 071909, 2005)

APPLIED PHYSICS LETTERS

IF3.6

2006-05-1811

OAAI