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Xiren Chen

chinese academy of sciences

H指数:14

被引数:705

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Unraveling Band-Tail Effects on Temperature-Dependent Emission in GaAsBi via Photoluminescence

通过光致发光揭示GaAsBi中带尾效应对温度依赖发射的影响

ADVANCED SCIENCE

IF14.1

2025-11-010

OAAI

Magnetic-field-induced photoluminescence enhancement in type-I quantum wells: A quantitative probe for interface flatness

I型量子阱中的磁场诱导光致发光增强：界面平坦度的定量探针

CHINESE PHYSICS B

IF1.5

2025-10-011

PRE

The band structure and carrier recombination mechanism of α/β-phase tellurium homojunction investigated by infrared photoluminescence

APPLIED PHYSICS LETTERS

IF3.6

2025-01-140

PRE

Mid-infrared modulated photoluminescence mapping to investigate in-plane distributions of bandedge transitions in As-doped HgCdTe

APPLIED PHYSICS LETTERS

IF3.6

2023-10-107

PRE

Photoluminescence mapping of mid-wave infrared InAs/GaSb type II superlattice: Influence of materials and processes on spatial uniformity

中波红外InAs/GaSb II型超晶格的光致发光映射: 材料和工艺对空间均匀性的影响

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-06-012

PRE

Influence of Frohlich Interaction on Intersubband Transitions of InGaAs/InAlAs-Based Quantum Cascade Detector Structures Investigated by Infrared Modulated Photoluminescence

CHINESE PHYSICS LETTERS

IF4.2

2023-06-013

PRE

Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires (vol 47, 5208, 2021)

IF3.3

2022-10-250

PRE

Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires

IF3.3

2022-09-295

OA

Electrically tunable spectral response in vertical nanowire arrays

APPLIED PHYSICS LETTERS

IF3.6

2022-09-260

PRE

Modulated Photoluminescence Mapping of Long-Wavelength Infrared InAs/GaSb Type-II Superlattice: In-Plane Optoelectronic Uniformity

PHYSICAL REVIEW APPLIED

IF4.4

2021-04-0213

PREAI

Hole array enhanced dual-band infrared photodetection

IF3.3

2021-02-165

OA

Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence

APPLIED PHYSICS LETTERS

IF3.6

2020-08-263

PREAI

High electron mobility InP grown by solid source molecular beam epitaxy

通过固体源分子束外延生长的高电子迁移率InP

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2020-06-014

PREAI

Large-Area, Broadband, Wide-Angle Plasmonic Metasurface Absorber for Midwavelength Infrared Atmospheric Transparency Window

ADVANCED OPTICAL MATERIALS

IF7.2

2019-07-2568

OAAI

Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

APPLIED PHYSICS LETTERS

IF3.6

2019-02-0712

PREAI

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires

NANOSCALE RESEARCH LETTERS

IF4.1

2018-09-057

OAAI

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

CHINESE PHYSICS LETTERS

IF4.2

2018-08-135

PREAI

Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO2 Matrix

嵌入SiO2基质中的硅纳米晶体的温度依赖性光致发光

CHEMICAL RESEARCH IN CHINESE UNIVERSITIES

IF3

2018-07-070

PREAI

Wavelength extension in GaSbBi quantum wells using delta-doping

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2018-05-016

PREAI

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2018-05-019

OAAI