未登录

J

Jun Lin

Hunan University

H指数:21

被引数:2,198

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Recent progress of advanced Nanozymes for targeted oncotherapy and synergistic immunotherapy

先进纳米酶在靶向肿瘤治疗与协同免疫治疗中的最新进展

COORDINATION CHEMISTRY REVIEWS

IF23.5

2025-04-160

PRE

Translocation mechanism of anticancer drugs through membrane with the assistance of graphene quantum dot

COLLOIDS AND SURFACES B-BIOINTERFACES

IF5.6

2025-01-011

PRE

Domain-specific adaptation network for inverter fault diagnosis: Knowledge transfer from simulation to physical domain

IF5.6

2024-03-014

PRE

Ultrahigh gain hot-electron tunneling transistor approaching the collection limit

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2023-04-041

PRE

An open-set fault diagnosis framework for MMCs based on optimized temporal convolutional network

APPLIED SOFT COMPUTING

IF6.6

2023-01-0113

PRE

Design of all-phase-change-memory spiking neural network enabled by Ge-Ga-Sb compound

基于ge-ga-sb化合物的全相变记忆脉冲神经网络设计

SCIENCE CHINA-MATERIALS

IF7.4

2023-01-0110

OA

Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

通过氧积累在其介电界面处具有扩大的范德华间隙的二硫化钼晶体管

NATURE ELECTRONICS

IF40.9

2022-12-0595

PRE

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

ADVANCED SCIENCE

IF14.1

2022-01-1721

OAAI

Structural and electrical characterisation of PtS from H2S-converted Pt

H2S-converted Pt的结构和电气特性

APPLIED MATERIALS TODAY

IF6.9

2021-12-019

OAAI

Low-Field Nuclear Magnetic Resonance Characteristics of Biofilm Development Process

IF4.2

2021-11-294

OAAI

Dry Exfoliation of Large-Area 2D Monolayer and Heterostructure Arrays

IF16

2021-08-0643

PREAI

Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

NATURE ELECTRONICS

IF40.9

2021-04-26185

PREAI

High-current MoS2 transistors with non-planar gate configuration

SCIENCE BULLETIN

IF21.1

2021-04-0111

PREAI

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

APPLIED PHYSICS LETTERS

IF3.6

2021-01-267

PREAI

Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase-Change Materials

基于硫族化物相变材料的神经形态器件研究进展

ADVANCED FUNCTIONAL MATERIALS

IF19

2020-09-11186

PREAI

High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical-oxidation

SCIENCE CHINA-MATERIALS

IF7.4

2020-03-1816

OAAI

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

APPLIED PHYSICS LETTERS

IF3.6

2019-11-0450

PREAI

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

在400 °C下生长的大面积超薄PtSe2薄膜中量子限制诱导的半金属到半导体的演化

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2019-09-0390

OAAI

Perovskite/Black Phosphorus/MoS2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response

IF16

2019-04-0298

PREAI

Hydrothermal synthesis of hierarchical CoO/SnO2 nanostructures for ethanol gas sensor

JOURNAL OF COLLOID AND INTERFACE SCIENCE

IF9.7

2018-03-0184

PREAI