未登录

C

Chong Qiao

nanyang institute of technology

H指数:17

被引数:820

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Structural and electronic properties of amorphous Ge2Bi2Te5 under melt-quenching

熔融快淬法制备的非晶Ge2Bi2Te5的结构和电子性质

Journal of Non-Crystalline Solids

IF3.5

2026-03-110

PRE

Unveiling the crystallization behavior of amorphous Te driven by pressure

揭示压力驱动的无定形碲的结晶行为

Journal of Materials Chemistry C

IF5.1

2026-03-010

PRE

First-Principles Study on the Electronic and Mechanical Properties of 2D C 6 H 4 and Its 1D Derivative

基于第一性原理的二维C 6 H 4及其一维衍生物的电子和力学性能研究

Physica Scripta

IF2.6

2026-01-010

PRE

Unveiling the nature of Ga-based chalcogenides for electrical switching selectors

揭示Ga基硫属化合物的电学开关选择器性质

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-04-010

PRE

Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-11-012

PRE

Study on the Infrared and Raman spectra of Ti3AlB2, Zr3AlB2, Hf3AlB2, and Ta3AlB2 by first-principles calculations

SCIENTIFIC REPORTS

IF3.9

2024-07-010

OAAI

Structural and electronic characteristics of amorphous Ge8Sb2Te11

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2024-06-011

PRE

Revealing the structure and electronic characteristics of Te-rich threshold switching materials for high-density integration

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-010

PRE

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

APPLIED PHYSICS LETTERS

IF3.6

2023-09-125

PRE

Interfacial coupled engineering of plasmonic amorphous MoO3-x nanodots/g-C3N4 nanosheets for photocatalytic water splitting and photothermal conversion

CHEMICAL ENGINEERING JOURNAL

IF13.2

2023-02-0133

PRE

Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-014

PRE

Temperature dependent dielectric properties of GeTe-rich (GeTe)x(Sb2Te3)1-x glass

APPLIED PHYSICS LETTERS

IF3.6

2022-11-211

OA

How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

SCRIPTA MATERIALIA

IF5.6

2022-09-0125

OAAI

Modulation of oxygen transport by incorporating Sb2Te3 layer in HfO2-based memristor

APPLIED PHYSICS LETTERS

IF3.6

2021-11-102

PRE

Ultrafast crystallization mechanism of amorphous Ge15Sb85 unraveled by pressure-driven simulations

ACTA MATERIALIA

IF9.3

2021-09-0116

PREAI

Structure, bonding nature and transition dynamics of amorphous Te

非晶Te的结构、成键性质和转变动力学

SCRIPTA MATERIALIA

IF5.6

2021-09-0122

PREAI

Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

IF4.5

2021-08-0218

OAAI

Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering

通过界面Al掺杂工程实现均匀且坚固的TiN/HfO2/Pt忆阻器

APPLIED SURFACE SCIENCE

IF6.9

2021-06-0143

PREAI

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

APPLIED PHYSICS LETTERS

IF3.6

2021-01-267

PREAI

Unraveling the structural and bonding nature of antimony sesquichalcogenide glass for electronic and photonic applications

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-0121

PRE