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A

A. Scorzoni

istituto nazionale di fisica nucleare (infn)
H指数:29
被引数:3,177

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Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance
2024-09-250
OAAI
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices
2022-10-043
OAAI
A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions
SENSORS
IF3.5
2020-11-2010
OAAI
A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons
2019-08-3014
OAAI