Shugo Nitta - Publications, H-index & Citations

Shugo Nitta

Mie University

34H指数

387论文数

4.3K被引数

收录论文 61

发表时间

Chemical vapor deposition of compound semiconductors: process simulation and experimental validation 化合物半导体化学气相沉积：工艺模拟与实验验证

Applied Physics Express

IF2.2

2026-01-01

PREAI

Kangawa, Yoshihiro; Kusaba, Akira; Akiyama, Toru; Nitta, Shugo; Iwaya, Motoaki; Miyake, Hideto; Kempisty, Pawel; Chabowska, Marta A.; Popova, Hristina; Zaluska-Kotur, Magdalena A.

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001)高取向外延六方氮化硼多层膜在耐高温单晶氮化铝(0001)上

Advanced Science

IF14.1

2025-09-29

OAAI

Xu Yang; Markus Pristovsek; Shugo Nitta; Yoshio Honda; Akihiro Ohtake; Yoshiki Sakuma; Takanobu Hiroto; Takayuki Ishida; Michio Ikezawa; Qixin Guo; Hiroshi Amano

Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2024-01-30

PREAI

Kimura, T.; Shimazu, H.; Kataoka, K.; Itoh, K.; Narita, T.; Uedono, A.; Tokuda, Y.; Tanaka, D.; Nitta, S.; Amano, H.; Nakamura, D.

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic

APPLIED PHYSICS LETTERS

IF3.6

2023-04-04

PREAI

Lu, Shun; Deki, Manato; Kumabe, Takeru; Wang, Jia; Ohnishi, Kazuki; Watanabe, Hirotaka; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars 氮化镓纳米柱中镨离子的光子提取增强

SCIENTIFIC REPORTS

IF3.9

2022-12-08

OAAI

Sato, Shin-ichiro; Li, Shuo; Greentree, Andrew D. D.; Deki, Manato; Nishimura, Tomoaki; Watanabe, Hirotaka; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Gibson, Brant C. C.; Ohshima, Takeshi

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

APPLIED PHYSICS LETTERS

IF3.6

2022-11-22

PREAI

Cai, Wentao; Furusawa, Yuta; Wang, Jia; Park, Jeong-Hwan; Liao, Yaqiang; Cheong, Hea-Jeong; Nitta, Shugo; Honda, Yoshio; Pristovsek, Markus; Amano, Hiroshi

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2022-10-18

OAAI

Kusaba, A.; Nitta, S.; Shiraishi, K.; Kuboyama, T.; Kangawa, Y.

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

APPLIED PHYSICS LETTERS

IF3.6

2022-03-24

OAAI

Liao, Yaqiang; Chen, Tao; Wang, Jia; Cai, Wentao; Ando, Yuto; Yang, Xu; Watanabe, Hirotaka; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Kevin J.; Amano, Hiroshi

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

APPLIED PHYSICS LETTERS

IF3.6

2021-12-14

PREAI

Lu, Shun; Deki, Manato; Wang, Jia; Ohnishi, Kazuki; Ando, Yuto; Kumabe, Takeru; Watanabe, Hirotaka; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021)

APPLIED PHYSICS LETTERS

IF3.6

2021-11-15

OAAI

Ohnishi, Kazuki; Kawasaki, Seiya; Fujimoto, Naoki; Nitta, Shugo; Watanabe, Hirotaka; Honda, Yoshio; Amano, Hiroshi

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2021-10-12

PREAI

Ohnishi, Kazuki; Kawasaki, Seiya; Fujimoto, Naoki; Nitta, Shugo; Watanabe, Hirotaka; Honda, Yoshio; Amano, Hiroshi

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

APPLIED PHYSICS LETTERS

IF3.6

2021-02-17

PREAI

Liu, T.; Watanabe, H.; Nitta, S.; Wang, J.; Yu, G.; Ando, Y.; Honda, Y.; Amano, H.; Tanaka, A.; Koide, Y.

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

CRYSTAL GROWTH & DESIGN

IF3.4

2021-02-01

PREAI

Kangawa, Yoshihiro; Kusaba, Akira; Kempisty, Pawel; Shiraishi, Kenji; Nitta, Shugo; Amano, Hiroshi

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

APPLIED PHYSICS LETTERS

IF3.6

2020-12-14

PREAI

Ando, Yuto; Nagamatsu, Kentaro; Deki, Manato; Taoka, Noriyuki; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Nakamura, Tohru; Amano, Hiroshi

State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

SCIENTIFIC REPORTS

IF3.9

2020-11-04

OAAI

Evropeitsev, Evgenii A.; Kazanov, Dmitrii R.; Robin, Yoann; Smirnov, Alexander N.; Eliseyev, Ilya A.; Davydov, Valery Yu.; Toropov, Alexey A.; Nitta, Shugo; Shubina, Tatiana V.; Amano, Hiroshi

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate 二维六方氮化硼与单晶金刚石衬底的外延结合

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-09-17

PREAI

Yang, Xu; Pristovsek, Markus; Nitta, Shugo; Liu, Yuhuai; Honda, Yoshio; Koide, Yasuo; Kawarada, Hiroshi; Amano, Hiroshi

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

APPLIED PHYSICS LETTERS

IF3.6

2020-09-08

PREAI

Ando, Yuto; Nagamatsu, Kentaro; Deki, Manato; Taoka, Noriyuki; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Nakamura, Tohru; Amano, Hiroshi

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

MICROMACHINES

IF3

2020-05-20

OAAI

Sandupatla, Abhinay; Arulkumaran, Subramaniam; Ing, Ng Geok; Nitta, Shugo; Kennedy, John; Amano, Hiroshi

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

SENSORS

IF3.5

2019-11-21

OAAI

Sandupatla, Abhinay; Arulkumaran, Subramaniam; Ranjan, Kumud; Ng, Geok Ing; Murmu, Peter P.; Kennedy, John; Nitta, Shugo; Honda, Yoshio; Deki, Manato; Amano, Hiroshi

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

MATERIALS

IF3.2

2019-08-14

OAAI

Sarzynski, Marcin; Grzanka, Ewa; Grzanka, Szymon; Targowski, Grzegorz; Czernecki, Robert; Reszka, Anna; Holy, Vaclav; Nitta, Shugo; Liu, Zhibin; Amano, Hiroshi; Leszczynski, Mike

研究方向