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Leisheng Su

dalian university of technology

H指数:6

被引数:86

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Fully Epitaxial Uncooled PbSe/CdSe/Bi2Se3 Heterojunction Barrier Middle Infrared Detector

全外延非制冷PbSe/CdSe/Bi₂Se₃异质结势垒中红外探测器

Advanced Materials Technologies

IF6.2

2026-05-040

PRE

Monolithic PbSe/Ge/Si Heteroepitaxial Architecture for Uncooled Dual-Band Infrared Detection

单块PbSe/Ge/Si异质外延结构用于无制冷双波段红外探测

ACS Applied Materials and Interfaces

IF8.2

2026-03-050

PRE

Selenium-assisted Surface Enhance Single-Crystal PbSe/Ge heterojunction for High Detectivity Uncooled Mid Infrared Wavelength Photovoltaic Detector

j. mater. chem. c

IF0

2026-01-270

PRE

High-sensitivity epitaxial Ge/PbSe/CdSe/Bi2Se3 p+pBn+ barrier heterojunction for uncooled middle infrared detection

高灵敏度外延Ge/PbSe/CdSe/Bi2Se3 p+pBn+势垒异质结用于无制冷中红外探测

IF0

2025-08-020

PRE

Theoretical design and simulation of uncooled PbSe/Ge mid-wavelength infrared avalanche photodetector

非制冷PbSe/Ge中波红外雪崩光电探测器的理论设计与仿真

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-10-140

PRE

High-performance PbS detectors sensitized from one-step sensitization

一步敏化的高性能PbS探测器

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-011

PRE

Theoretical design of uncooled mid-infrared PbSe P+pBn+ barrier detectors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-01-081

PRE

Wafer-Scale High-Detectivity Near-Infrared PbS Detectors Fabricated from Vapor Phase Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-05-236

PRE

High-Performance Uncooled Mid-Infrared Detector Based on a Polycrystalline PbSe/CdSe Heterojunction

基于多晶PbSe/CdSe异质结的高性能非制冷中红外探测器

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-05-096

PRE

Morphological and microstructural evolution of high-quality PbSe epitaxial film on Si substrate by chemical bath deposition

Si衬底上化学浴沉积高质量PbSe外延膜的形貌和微观结构演变

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-11-015

OAAI