A. Hangleiter - Publications, H-index & Citations

A. Hangleiter

Braunschweig University of Technology

40H指数

295论文数

6.5K被引数

收录论文 63

发表时间

Point defect diffusion in III-nitrides: A key mechanism for thermal degradation and non-radiative recombination in GaInN/GaN quantum well structures

APPLIED PHYSICS LETTERS

IF3.6

2025-01-21

OAAI

Lourenco, R. de Vasconcellos; Bremers, H.; Rossow, U.; Hangleiter, A.

Polarization anisotropy and valence band ordering in semipolar (11(2)over-tilde2) AlInN/GaN heterostructures

PHYSICAL REVIEW B

IF3.7

2023-01-05

PREAI

Sidikejiang, Shawutijiang; Henning, Philipp; Rossow, Uwe; Bremers, Heiko; Scholz, Ferdinand; Hangleiter, Andreas

Unity quantum efficiency in III-nitride quantum wells at low temperature: Experimental verification by time-resolved photoluminescence

APPLIED PHYSICS LETTERS

IF3.6

2021-07-08

OAAI

Henning, Philipp; Sidikejiang, Shawutijiang; Horenburg, Philipp; Bremers, Heiko; Rossow, Uwe; Hangleiter, Andreas

Ultrafast Terahertz Nanoseismology of GaInN/GaN Multiple Quantum Wells GaInN/GaN多量子阱的超快太赫兹纳米研究

ADVANCED OPTICAL MATERIALS

IF7.2

2021-05-04

PREAI

Mannan, Abdul; Bagsican, Filchito Renee G.; Yamahara, Kota; Kawayama, Iwao; Murakami, Hironaru; Bremers, Heiko; Rossow, Uwe; Hangleiter, Andreas; Turchinovich, Dmitry; Tonouchi, Masayoshi

Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

APPLIED PHYSICS LETTERS

IF3.6

2019-11-13

OAAI

Henning, Philipp; Horenburg, Philipp; Bremers, Heiko; Rossow, Uwe; Tendille, Florian; Vennegues, Philippe; de Mierry, Philippe; Zuniga-Perez, Jesus; Hangleiter, Andreas

Reduced radiative emission for wide nonpolar III-nitride quantum wells

PHYSICAL REVIEW B

IF3.7

2019-05-29

PREAI

Henning, Philipp; Horenburg, Philipp; Bremers, Heiko; Rossow, Uwe; Hangleiter, Andreas

Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2019-02-04

PREAI

Ketzer, Fedor Alexej; Horenburg, Philipp; Henning, Philipp; Korn, Ernst Ronald; Bremers, Heiko; Rossow, Uwe; Hangleiter, Andreas

Insights into Interfacial Changes and Photoelectrochemical Stability of InxGa1-xN (0001) Photoanode Surfaces in Liquid Environments

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-03-17

PREAI

Caccamo, Lorenzo; Cocco, Giulio; Martin, Gemma; Zhou, Hao; Fundling, Soenke; Gad, Alaaeldin; Mohajerani, Matin Sadat; Abdelfatah, Mahmoud; Estrade, Sonia; Peiro, Francesca; Dziony, Wanja; Bremers, Heiko; Hangleiter, Andreas; Mayrhofer, Leonhard; Lilienkamp, Gerhard; Moseler, Michael; Daum, Winfried; Waag, Andreas

Strain dependence of In incorporation in m-oriented GaInN/GaN multi quantum well structures

APPLIED PHYSICS LETTERS

IF3.6

2016-03-09

PREAI

Horenburg, Philipp; Buss, Ernst Ronald; Rossow, Uwe; Bremers, Heiko; Ketzer, Fedor Alexej; Hangleiter, Andreas

Efficient formation of excitons in a dense electron-hole plasma at room temperature

PHYSICAL REVIEW B

IF3.7

2015-12-28

PREAI

Hangleiter, Andreas; Jin, Zuanming; Gerhard, Marina; Kalincev, Dimitry; Langer, Torsten; Bremers, Heiko; Rossow, Uwe; Koch, Martin; Bonn, Mischa; Turchinovich, Dmitry

S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination

PHYSICAL REVIEW B

IF3.7

2014-11-14

PREAI

Langer, Torsten; Pietscher, Hans-Georg; Ketzer, Fedor Alexej; Joenen, Holger; Bremers, Heiko; Rossow, Uwe; Menzel, Dirk; Hangleiter, Andreas

Intentional anisotropic strain relaxation in (11(2)over-bar2) oriented Al1-xInxN one-dimensionally lattice matched to GaN

APPLIED PHYSICS LETTERS

IF3.6

2014-09-24

PREAI

Buss, E. R.; Rossow, U.; Bremers, H.; Meisch, T.; Caliebe, M.; Scholz, F.; Hangleiter, A.

Lattice-matched AlInN in the initial stage of growth

APPLIED PHYSICS LETTERS

IF3.6

2014-04-22

PREAI

Buss, E. R.; Rossow, U.; Bremers, H.; Hangleiter, A.

Room temperature excitonic recombination in GaInN/GaN quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2013-11-11

PREAI

Langer, Torsten; Chernikov, Alexey; Kalincev, Dimitri; Gerhard, Marina; Bremers, Heiko; Rossow, Uwe; Koch, Martin; Hangleiter, Andreas

Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

APPLIED PHYSICS LETTERS

IF3.6

2013-07-10

PREAI

Langer, Torsten; Joenen, Holger; Kruse, Andreas; Bremers, Heiko; Rossow, Uwe; Hangleiter, Andreas

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

APPLIED PHYSICS LETTERS

IF3.6

2013-04-04

PREAI

Mehrtens, T.; Schowalter, M.; Tytko, D.; Choi, P.; Raabe, D.; Hoffmann, L.; Joenen, H.; Rossow, U.; Hangleiter, A.; Rosenauer, A.

Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content

APPLIED PHYSICS LETTERS

IF3.6

2013-03-14

PREAI

Hoffmann, L.; Bremers, H.; Joenen, H.; Rossow, U.; Schowalter, M.; Mehrtens, T.; Rosenauer, A.; Hangleiter, A.

Strong enhancement of Eu+3 luminescence in europium-implanted GaN by Si and Mg codoping

APPLIED PHYSICS LETTERS

IF3.6

2013-02-14

PREAI

Mishra, J. K.; Langer, T.; Rossow, U.; Shvarkov, S.; Wieck, A.; Hangleiter, A.

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2012-07-17

PREAI

Li, Shunfeng; Wang, Xue; Fuendling, Soenke; Erenburg, Milena; Ledig, Johannes; Wei, Jiandong; Wehmann, Hergo H.; Waag, Andreas; Bergbauer, Werner; Mandl, Martin; Strassburg, Martin; Trampert, Achim; Jahn, Uwe; Riechert, Henning; Joenen, Holger; Hangleiter, Andreas

Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2012-04-11

PREAI

Joenen, H.; Bremers, H.; Langer, T.; Rossow, U.; Hangleiter, A.

研究方向