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C

Christian Uhrenfeldt

Aalborg University

H指数:21

被引数:1,694

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Impacts of the Bottom Copper Layer of Direct-Bond Copper Substrates on the Partial Discharge Performance in Power Modules

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2025-04-010

PRE

Parasitic Capacitance Modeling of Inductors Without Using the Floating Voltage Potential of Core

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2022-03-0117

OAAI

Performance evaluation of lithium-ion batteries (LiFePO4 cathode) from novel perspectives using a new figure of merit, temperature distribution analysis, and cell package analysis

使用新的品质因数，温度分布分析和电池包装分析从新颖的角度评估锂离子电池 (LiFePO4阴极) 的性能

JOURNAL OF ENERGY STORAGE

IF9.8

2021-12-015

PRE

Evaluation of in situ Thermomechanical Stress-Strain in Power Modules Using Laser Displacement Sensors

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-08-0112

OAAI

Mitigation measures of the electric field in the medium-voltage power module: Effect of voltage types and recommendations for designers

IF4.9

2021-04-2612

OA

Physics-Based Modeling of Parasitic Capacitance in Medium-Voltage Filter Inductors

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-01-0141

OAAI

Overview of Digital Design and Finite-Element Analysis in Modern Power Electronic Packaging

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2020-10-0135

OA

How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range?

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2020-07-019

OAAI

Statistical Method of Estimating Semiconductor Switching Transition Time Enabling Condition Monitoring of Megawatt Converters

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2020-06-014

OAAI

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2019-03-0173

OAAI

Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2017-12-0161

PREAI

Modeling of Short-Circuit-Related Thermal Stress in Aged IGBT Modules

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2017-09-0129

OAAI

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2016-01-01219

OAAI

Broadband photocurrent enhancement and light-trapping in thin film Si solar cells with periodic Al nanoparticle arrays on the front

IF3.3

2015-04-1720

OAAI

Diffractive coupling and plasmon-enhanced photocurrent generation in silicon

IF3.3

2013-07-156

OAAI

Plasmonic Properties of β-Sn Nanoparticles in Ordered and Disordered Arrangements

IF4.3

2012-09-136

PREAI

Tuning Plasmon Resonances for Light Coupling into Silicon: a Rule of Thumb for Experimental Design

IF4.3

2012-08-175

PREAI

Optical transmission through two-dimensional arrays of β-Sn nanoparticles

PHYSICAL REVIEW B

IF3.7

2011-09-1211

PREAI