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H

Heiji Watanabe

University of Osaka

36H指数
615论文数
6.0K被引数
收录论文 97
发表时间
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Unified first-principles framework for predicting radiative and non-radiative processes in color centers统一的第一性原理框架，用于预测色心中的辐射和非辐射过程
errnpj Computational Materials
IF11.9
err2026-08-25
err0
errOAAI
errSosuke Iwamoto; Masahiro Hara; Heiji Watanabe; Takuma Kobayashi
err分享
err收藏
Optical mode competition in tensile-strained Ge microdisks fabricated by laser-induced liquid-phase crystallization激光诱导液相结晶法制备的拉伸应变Ge微盘中的光学模式竞争
errJapanese Journal of Applied Physics
IF1.8
err2026-01-30
err0
PREAI
errLi, Tianping; Zhan, Liji; Hayakawa, Yuta; Kobayashi, Takuma; Watanabe, Heiji; Shimura, Takayoshi
err分享
err收藏
Backscattering X-ray imaging using a caustic network aperture利用焦散网络光阑的背散射X射线成像
errJapanese Journal of Applied Physics
IF1.8
err2025-12-01
err0
PREAI
errShimura, Takayoshi; Tsuji, Naruki; Kajiwara, Kentaro; Watanabe, Heiji
err分享
err收藏
Design of annealing conditions for the formation of isolated single-photon emitters at SiO2/SiC interfaces在SiO2/SiC界面处形成孤立单光子发射体的退火条件设计
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-05-22
err0
errOAAI
errNakanuma, Takato; Toyama, Haruko; Tahara, Kosuke; Kutsuki, Katsuhiro; Watanabe, Heiji; Kobayashi, Takuma
err分享
err收藏
Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces
errAPL MATERIALS
IF4.5
err2025-02-27
err0
errOAAI
errOnishi, Kentaro; Nakanuma, Takato; Toyama, Haruko; Tahara, Kosuke; Kutsuki, Katsuhiro; Watanabe, Heiji; Kobayashi, Takuma
err分享
err收藏
GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-15
err0
PREAI
errHara, Masahiro; Kobayashi, Takuma; Nozaki, Mikito; Watanabe, Heiji
err分享
err收藏
Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-06
err0
PREAI
errKobayashi, Takuma; Maeda, Kensei; Hara, Masahiro; Nozaki, Mikito; Watanabe, Heiji
err分享
err收藏
Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-12-16
err0
PREAI
errKobayashi, Takuma; Koyanagi, Kaho; Hirai, Hirohisa; Sometani, Mitsuru; Okamoto, Mitsuo; Watanabe, Heiji
err分享
err收藏
Characterization of nitrided SiC(1 <(1)over bar> 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-06-01
err3
PREAI
errKobayashi, Takuma; Suzuki, Asato; Nakanuma, Takato; Sometani, Mitsuru; Okamoto, Mitsuo; Yoshigoe, Akitaka; Shimura, Takayoshi; Watanabe, Heiji
err分享
err收藏
Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-09-06
err5
errOAAI
errNakanuma, Takato; Tahara, Kosuke; Kutsuki, Katsuhiro; Shimura, Takayoshi; Watanabe, Heiji; Kobayashi, Takuma
err分享
err收藏
Compositional stability in medium and high-entropy alloys of CoCrFeMnNi system under ion irradiation
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2022-12-01
err14
PREAI
errXu, Q.; Guan, H. Q.; Huang, S. S.; Zhong, Z. H.; Watanabe, H.; Tokitani, M.
err分享
err收藏
Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000(1)over-bar) substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-08-09
err1
PREAI
errMizobata, Hidetoshi; Tomigahara, Kazuki; Nozaki, Mikito; Kobayashi, Takuma; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji
err分享
err收藏
Insight into interface electrical properties of metal-oxide-semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-02-23
err17
PREAI
errWada, Yuhei; Mizobata, Hidetoshi; Nozaki, Mikito; Kobayashi, Takuma; Hosoi, Takuji; Kachi, Tetsu; Shimura, Takayoshi; Watanabe, Heiji
err分享
err收藏
A Pixel Design of a Branching Ultra-Highspeed Image Sensor
errSENSORS
IF3.5
err2021-04-03
err3
errOAAI
errNguyen Hoai Ngo; Shimonomura, Kazuhiro; Ando, Taeko; Shimura, Takayoshi; Watanabe, Heiji; Takehara, Kohsei; Anh Quang Nguyen; Charbon, Edoardo; Etoh, Takeharu Goji
err分享
err收藏
Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light
errSENSORS
IF3.5
err2020-12-02
err6
errOAAI
errNguyen Hoai Ngo; Anh Quang Nguyen; Bufler, Fabian M.; Kamakura, Yoshinari; Mutoh, Hideki; Shimura, Takayoshi; Hosoi, Takuji; Watanabe, Heiji; Matagne, Philippe; Shimonomura, Kazuhiro; Takehara, Kohsei; Charbon, Edoardo; Etoh, Takeharu Goji
err分享
err收藏
Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-09-25
err28
PREAI
errSometani, Mitsuru; Hosoi, Takuji; Hirai, Hirohisa; Hatakeyama, Tetsuo; Harada, Shinsuke; Yano, Hiroshi; Shimura, Takayoshi; Watanabe, Heiji; Yonezawa, Yoshiyuki; Okumura, Hajime
err分享
err收藏
Advancement of X-ray radiography using microfocus X-ray source in conjunction with amplitude grating and SOI pixel detector, SOPHIAS
errOPTICS EXPRESS
IF3.3
err2018-08-01
err4
errOAAI
errHosono, Ryo; Kawabata, Tomoki; Hayashida, Kiyoshi; Kudo, Togo; Ozaki, Kyosuke; Teranishi, Nobukazu; Hatsui, Takaki; Hosoi, Takuji; Watanabe, Heiji; Shimura, Takayoshi
err分享
err收藏
Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams
errAPPLIED PHYSICS LETTERS
IF3.6
err2018-05-03
err6
errOAAI
errUedono, Akira; Yamada, Takahiro; Hosoi, Takuji; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Watanabe, Heiji
err分享
err收藏
Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-07-24
err17
PREAI
errWatanabe, Kenta; Nozaki, Mikito; Yamada, Takahiro; Nakazawa, Satoshi; Anda, Yoshiharu; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji
err分享
err收藏
Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-06-29
err64
PREAI
errYamada, Takahiro; Ito, Joyo; Asahara, Ryohei; Watanabe, Kenta; Nozaki, Mikito; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji
err分享
err收藏

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