Shigeaki Zaima - Publications, H-index & Citations

Shigeaki Zaima

Nagoya University

36H指数

631论文数

6.2K被引数

收录论文 68

发表时间

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping

APPLIED PHYSICS LETTERS

IF3.6

2020-08-07

PREAI

Peng, Ying; Lai, Huajun; Liu, Chengyan; Gao, Jie; Kurosawa, Masashi; Nakatsuka, Osamu; Takeuchi, Tsunehiro; Zaima, Shigeaki; Tanemura, Sakae; Miao, Lei

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation

SCIENTIFIC REPORTS

IF3.9

2019-10-04

OAAI

Peng, Ying; Miao, Lei; Gao, Jie; Liu, Chengyan; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

APPLIED PHYSICS LETTERS

IF3.6

2018-11-07

PREAI

Gupta, S.; Shimura, Y.; Richard, O.; Douhard, B.; Simoen, E.; Bender, H.; Nakatsuka, O.; Zaima, S.; Loo, R.; Heyns, M.

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water

APPLIED PHYSICS LETTERS

IF3.6

2018-02-06

PREAI

Takahashi, Kouta; Kurosawa, Masashi; Ikenoue, Hiroshi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates

APPLIED PHYSICS LETTERS

IF3.6

2017-11-10

PREAI

Kurosawa, Masashi; Kato, Motohiro; Takahashi, Kouta; Nakatsuka, Osamu; Zaima, Shigeaki

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

PREAI

Taoka, Noriyuki; Capellini, Giovanni; Schlykow, Viktoria; Montanari, Michele; Zaumseil, Peter; Nakatsuka, Osamu; Zaima, Shigeaki; Schroeder, Thomas

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

OAAI

Yoshikawa, Isao; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

OAAI

Shimura, Yosuke; Asano, Takanori; Yamaha, Takashi; Fukuda, Masahiro; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/ Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

PREAI

Fukuda, Masahiro; Yamaha, Takashi; Asano, Takanori; Fujinami, Syunsuke; Shimura, Yosuke; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

PREAI

Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-01-01

PREAI

Taoka, Noriyuki; Capellini, Giovanni; Schlykow, Viktoria; Montanari, Michele; Zaumseil, Peter; Nakatsuka, Osamu; Zaima, Shigeaki; Schroeder, Thomas

Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2016-02-12

PREAI

Yamaha, Takashi; Shibayama, Shigehisa; Asano, Takanori; Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution

APPLIED PHYSICS LETTERS

IF3.6

2016-02-03

PREAI

Takahashi, Kouta; Kurosawa, Masashi; Ikenoue, Hiroshi; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

Growth and applications of GeSn-related group-IV semiconductor materials

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

IF6.9

2016-01-11

165

OAAI

Zaima, Shigeaki; Nakatsuka, Osamu; Taoka, Noriyuki; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, Mitsuo

Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer

APPLIED PHYSICS LETTERS

IF3.6

2015-11-23

PREAI

Suzuki, Akihiro; Nakatsuka, Osamu; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Kurosawa, Masashi; Zaima, Shigeaki

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

APPLIED PHYSICS LETTERS

IF3.6

2015-09-09

PREAI

Kato, Kimihiko; Taoka, Noriyuki; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

APPLIED PHYSICS LETTERS

IF3.6

2015-07-13

PREAI

Takeuchi, Wakana; Taoka, Noriyuki; Kurosawa, Masashi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction

APPLIED PHYSICS LETTERS

IF3.6

2015-05-07

PREAI

Ike, Shinichi; Nakatsuka, Osamu; Moriyama, Yoshihiko; Kurosawa, Masashi; Taoka, Noriyuki; Imai, Yasuhiko; Kimura, Shigeru; Tezuka, Tsutomu; Zaima, Shigeaki

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

APPLIED PHYSICS LETTERS

IF3.6

2015-04-29

PREAI

Kurosawa, Masashi; Kato, Motohiro; Yamaha, Takashi; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2015-02-12

PREAI

Shibayama, Shigehisa; Yoshida, Teppei; Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

研究方向