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J

Jan Vanhellemont

Ghent University

33H指数
478论文数
4.5K被引数
收录论文 36
发表时间
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Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err15
PREAI
errKissinger, G; Grabolla, T; Morgenstern, G; Richter, H; Gräf, D; Vanhellemont, J; Lambert, U; von Ammon, W
err分享
err收藏
Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err74
PREAI
errRotondaro, ALP; Hurd, TQ; Kaniava, A; Vanhellemont, J; Simoen, E; Heyns, MM; Claeys, C
err分享
err收藏
Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err6
errOAAI
errGramenova, E; Jansen, P; Simoen, E; Vanhellemont, J; Dupas, L; Deferm, L
err分享
err收藏
Influence of residual point defect supersaturation on the formation of grown-in oxide precipitate nuclei in CZ-Si
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err17
PREAI
errKissinger, G; Vanhellemont, J; Lambert, U; Graf, D; Dornberger, E; Richter, H
err分享
err收藏
High-Throughput Screening of Extrinsic Point Defect Properties in Si and Ge: Database and Applications
errCHEMISTRY OF MATERIALS
IF7
err2016-12-27
err14
errOAAI
errSluydts, Michael; Pieters, Michael; Vanhellemon, Jan; Van Speybroeck, Veronique; Cottenier, Stefaan
err分享
err收藏
Low temperature iron gettering by grown-in defects in p-type Czochralski silicon
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2016-11-01
err4
PREAI
errZhu, Haiyan; Yu, Xuegong; Zhu, Xiaodong; Wu, Yichao; He, Jian; Vanhellemont, Jan; Yang, Deren
err分享
err收藏
The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2016-03-01
err13
errOAAI
errKamiyama, Eiji; Matsutani, Ryo; Suwa, Ryo; Vanhellemont, Jan; Sueoka, Koji
err分享
err收藏
On the diffusion and activation of n-type dopants in Ge (vol 15, pg 642, 2012)
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2014-01-01
err1
errOAAI
errVanhellemont, Jan; Simoen, Eddy
err分享
err收藏
Temperature-independent slow carrier emission from deep-level defects in p-type germanium
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2013-09-27
err4
errOAAI
errSegers, S. H.; Lauwaert, J.; Clauws, P.; Simoen, E.; Vanhellemont, J.; Callens, F.; Vrielinck, H.
err分享
err收藏
Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-02-28
err13
PREAI
errKamiyama, E.; Vanhellemont, J.; Sueoka, K.; Araki, K.; Izunome, K.
err分享
err收藏
On the diffusion and activation of n-type dopants in Ge
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2012-12-01
err64
PREAI
errVanhellemont, Jan; Simoen, Eddy
err分享
err收藏
Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2009-04-01
err2
PREAI
errGaubas, E.; Uleckas, A.; Vanhellemont, J.
err分享
err收藏
Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2008-12-01
err2
PREAI
errGaubas, E.; Uleckas, A.; Grigonis, R.; Sirutkaitis, V.; Vanhellemont, J.
err分享
err收藏
Metal implants-dependent carrier recombination characteristics in Ge
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2008-10-01
err0
PREAI
errGaubas, E.; Uleckas, A.; Vanhellemont, J.; Geens, W.
err分享
err收藏
E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS Preface
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2008-10-01
err0
PREAI
errClaeys, Cor; Peaker, Tony; Fompeyrine, Jean; Frank, Martin; Vanhellemont, Jan
err分享
err收藏
Ab-initio simulation of self-interstitial in germanium锗中自填隙的Ab-initio模拟
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2008-10-01
err20
PREAI
errSpiewak, P.; Vanhellemont, J.; Sueoka, K.; Kurzydlowski, K. J.; Romandic, I.
err分享
err收藏
Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-06-02
err9
PREAI
errGaubas, E.; Uleckas, A.; Grigonis, R.; Sirutkaitis, V.; Vanhellemont, J.
err分享
err收藏
Brother silicon, sister germanium
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2007-01-01
err102
errOAAI
errVanhellemont, J.; Simoen, E.
err分享
err收藏
Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2007-01-01
err53
PREAI
errGaubas, E.; Vanhellemont, J.
err分享
err收藏
Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-10-03
err74
PREAI
errGaubas, E.; Vanhellemont, J.
err分享
err收藏

研究方向

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