Anne Henry - Publications, H-index & Citations

Anne Henry

Linkoping University

41H指数

396论文数

6.1K被引数

收录论文 39

发表时间

Comments on a peak of AlxGa1-xN observed by infrared reflectance

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2016-05-01

PREAI

Marx, G.; Engelbrecht, J. A. A.; Lee, M. E.; Wagener, M. C.; Henry, A.

Notes on the plasma resonance peak employed to determine doping in SiC

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2015-09-01

OAAI

Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; Janzen, E.; Sephton, B.

Polytype Pure sp2-BN Thin Films As Dictated by the Substrate Crystal Structure

CHEMISTRY OF MATERIALS

IF7

2015-02-18

PREAI

Chubarov, Mikhail; Pedersen, Henrik; Hogberg, Hans; Czigany, Zsolt; Garbrecht, Magnus; Henry, Anne

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

APPLIED PHYSICS LETTERS

IF3.6

2013-05-31

OAAI

Thierry-Jebali, N.; Vo-Ha, A.; Carole, D.; Lazar, M.; Ferro, G.; Planson, D.; Henry, A.; Brosselard, P.

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

APPLIED PHYSICS LETTERS

IF3.6

2012-11-27

OAAI

Thierry-Jebali, N.; Hassan, J.; Lazar, M.; Planson, D.; Bano, E.; Henry, A.; Janzen, E.; Brosselard, P.

Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2012-10-16

OAAI

Beyer, F. C.; Hemmingsson, C. G.; Pedersen, H.; Henry, A.; Isoya, J.; Morishita, N.; Ohshima, T.; Janzen, E.

Growth of High Quality Epitaxial Rhombohedral Boron Nitride

CRYSTAL GROWTH & DESIGN

IF3.4

2012-05-09

PREAI

Chubarov, Mikhail; Pedersen, Henrik; Hogberg, Hans; Jensen, Jens; Henry, Anne

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

CRYSTAL GROWTH & DESIGN

IF3.4

2012-03-08

PREAI

Leone, Stefano; Kordina, Olof; Henry, Anne; Nishizawa, Shin-ichi; Danielsson, Orjan; Janzen, Erik

Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

MATERIALS RESEARCH BULLETIN

IF5.7

2011-08-01

PREAI

Leone, S.; Beyer, F. C.; Pedersen, H.; Kordina, O.; Henry, A.; Janzen, E.

Deep levels in tungsten doped n-type 3C-SiC

APPLIED PHYSICS LETTERS

IF3.6

2011-04-13

OAAI

Beyer, F. C.; Hemmingsson, C. G.; Gallstrom, A.; Leone, S.; Pedersen, H.; Henry, A.; Janzen, E.

Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

SUPERCONDUCTOR SCIENCE & TECHNOLOGY

IF4.2

2011-01-20

OAAI

Dochev, D.; Desmaris, V.; Pavolotsky, A.; Meledin, D.; Lai, Z.; Henry, A.; Janzen, E.; Pippel, E.; Woltersdorf, J.; Belitsky, V.

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

CRYSTAL GROWTH & DESIGN

IF3.4

2010-11-12

PREAI

Leone, Stefano; Beyer, Franziska C.; Pedersen, Henrik; Kordina, Olof; Henry, Anne; Janzen, Erik

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

CRYSTAL GROWTH & DESIGN

IF3.4

2010-06-18

PREAI

Leone, Stefano; Beyer, Franziska C.; Henry, Anne; Hemmingsson, Carl; Kordina, Olof; Janzen, Erik

Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

JOURNAL OF LUMINESCENCE

IF3.6

2010-06-01

OAAI

Bano, N.; Hussain, I.; Nur, O.; Willander, M.; Wahab, Q.; Henry, A.; Kwack, H. S.; Dang, D. Le Si

Optimization of a Concentrated Chloride-Based CVD Process for 4H-SiC Epilayers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2010-01-01

PREAI

Leone, S.; Henry, A.; Andersson, S.; Kordina, O.; Janzen, E.

Very high epitaxial growth rate of SiC using MTS as chloride-based precursor

SURFACE & COATINGS TECHNOLOGY

IF6.1

2007-09-01

PREAI

Pedersen, H.; Leone, S.; Henry, A.; Darakchieva, V.; Janzen, E.

Titanium related luminescence in SiC

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2006-10-01

PREAI

Henry, A.; Janzen, E.

Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC -: art. no. 075201

PHYSICAL REVIEW B

IF3.7

2006-02-01

PREAI

Son, NT; Henry, A; Isoya, J; Katagiri, M; Umeda, T; Gali, A; Janzén, E

Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission -: art. no. 241201

PHYSICAL REVIEW B

IF3.7

2005-06-07

PREAI

Ivanov, IG; Henry, A; Janzén, E

Doping-induced strain in N-doped 4H-SiC crystals N掺杂4H-SiC晶体中掺杂诱导的应变

APPLIED PHYSICS LETTERS

IF3.6

2003-05-26

PREAI

Jacobson, H; Birch, J; Hallin, C; Henry, A; Yakimova, R; Tuomi, T; Janzén, E; Lindefelt, U

研究方向