Yuriy V. Pershin - Publications, H-index & Citations

Yuriy V. Pershin

University of South Carolina

36H指数

195论文数

1.1W被引数

收录论文 63

发表时间

Optimizing Joule losses in memristive switching with fractional dynamics: a numerical approach

Nonlinear Dynamics

IF6

2026-07-21

OAAI

Nathan Astin; Yuriy V. Pershin

EGaIn tube memristors offering reliable switching on a biological time scale EGaIn管状忆阻器在生物时间尺度上提供可靠的开关特性

Communications Materials

IF9.6

2026-02-27

OAAI

Yuriy V. Pershin; Liya Patel; Bapi Bera; Doug Aaron; Stephen A. Sarles

Minimizing energy dissipation during programming of resistive switching memory devices using their dynamical attractor states 利用电阻式存储器器件的动态吸引子状态来最小化编程过程中的能量损耗

Journal of Physics D: Applied Physics

IF3.2

2026-02-24

OAAI

Valeriy A Slipko; Alon Ascoli; Fernando Corinto; Yuriy V Pershin

Low-Power Control Of Resistance Switching Transitions in First-Order Memristors 低功耗控制一阶忆阻器中的电阻开关转换

Advanced Electronic Materials

IF5.3

2026-02-15

OAAI

Valeriy A. Slipko; Alon Ascoli; Fernando Corinto; Yuriy V. Pershin

Large magnetoresistance and quantum oscillations observed in superconducting β-IrSn4 在超导β-IrSn4中观察到的大磁阻和量子振荡

Journal of Physics-Condensed Matter

IF2.6

2026-02-06

PREAI

Speer, Smita; Pershin, Yuriy, V; Blawat, Joanna; Singleton, John; Jin, Rongying

Shift Register for Graphene Kinks

PHYSICAL REVIEW APPLIED

IF4.4

2022-09-01

PREAI

Nguyen, Dyk Chung; V. Pershin, Yuriy

The Rich Dynamics of Memristive Devices With Non-Separable Nonlinear Response

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2022-03-01

PREAI

Guseinov, Davud, V; Mikhaylov, Alexey N.; Pershin, Yuriy, V

Theory of Heterogeneous Circuits With Stochastic Memristive Devices

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2022-01-01

OAAI

Slipko, Valeriy A.; Pershin, Yuriy, V

Influence of a constriction on the motion of graphene kinks

PHYSICAL REVIEW B

IF3.7

2021-06-29

OAAI

Dyk Chung Nguyen; Yamaletdinov, Ruslan D.; Pershin, Yuriy, V

Importance of the Window Function Choice for the Predictive Modelling of Memristors

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2021-06-01

OAAI

Slipko, Valeriy A.; Pershin, Yuriy V.

The Fourier signatures of memristive hysteresis

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-03-30

OAAI

Pershin, Yuriy, V; Chien, Chih-Chun; Di Ventra, Massimiliano

Ultrafast lithium diffusion in bilayer buckled graphene: A comparative study of Li and Na

SCRIPTA MATERIALIA

IF5.6

2020-03-01

OAAI

Yamaletdinov, Ruslan D.; Pershin, Yuriy V.

On the validity of memristor modeling in the neural network literature

NEURAL NETWORKS

IF6.3

2020-01-01

OAAI

Pershin, Yuriy V.; Di Ventra, Massimiliano

Bifurcation analysis of a TaO memristor model

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-10-10

OAAI

Pershin, Y., V; Slipko, V. A.

A Demonstration of Implication Logic Based on Volatile (Diffusive) Memristors 基于易失性 (扩散) 忆阻器的蕴涵逻辑演示

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2019-06-01

PREAI

Pershin, Yuriy, V

A simple test for ideal memristors 理想忆阻器的简单测试

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-10-24

OAAI

Pershin, Y., V; Di Ventra, M.

Chemical sensors are hybrid-input memristors

APPLIED SURFACE SCIENCE

IF6.9

2018-04-01

PREAI

Sysoev, V. I.; Arkhipov, V. E.; Okotrub, A. V.; Pershin, Y. V.

Snap-through transition of buckled graphene membranes for memcapacitor applications

SCIENTIFIC REPORTS

IF3.9

2018-02-23

OAAI

Yamaletdinov, Ruslan D.; Ivakhnenko, Oleg V.; Sedelnikova, Olga V.; Shevchenko, Sergey N.; Pershin, Yuriy V.

Kinks and antikinks of buckled graphene: A testing ground for the φ4 field model

PHYSICAL REVIEW B

IF3.7

2017-09-18

OAAI

Yamaletdinov, R. D.; Slipko, V. A.; Pershin, Y. V.

Finding Stable Graphene Conformations from Pull and Release Experiments with Molecular Dynamics (vol 7, 42356, 2017)

SCIENTIFIC REPORTS

IF3.9

2017-03-23

OAAI

Yamaletdinov, Ruslan D.; Pershin, Yuriy V.

研究方向